In-rich InGaN/GaN nanowires (NWs) are key optoelectronic materials, which can close the green gap of the light emitting diodes and can be used in efficient high-bandgap solar cells for integration in tandem devices. Realization of these devices requires as a first step the optimization of the NW structure and their electrical parameters. Electron Beam Induced Current (EBIC) microscopy is well suited to probe nanoscale devices with a high resolution and to extract the material parameters.
Here, we analyze the electrical properties of axial GaN and InGaN/GaN n-p and p-n junction NWs using EBIC microscopy. III-N NWs were grown on Si(111) substrates by molecular beam epitaxy using Mg as a p-dopant and Si as an n-dopant. The growth conditions were adjusted to optimize the doping order with an abrupt axial junction without a parasitic radial overgrowth. From the EBIC analysis of the GaN p-n junctions, the doping level and the minorities carrier diffusion lengths were extracted. Next, a p-GaN/i-InGaN/n-GaN junction containing an In-rich InGaN segment  was grown yielding a flat and strong EBIC signal in the InGaN NW portion. NW arrays were then contacted and their behavior under visible light was analyzed.
 Morassi et al., Cryst. Growth Des., 2545, 18 2018
Today, the record in photovoltaic (PV) conversion efficiency is detained by multi-junction solar cells based on III-V semiconductors. However, the wide adoption of these devices is hindered by their high production cost, especially the expensive III-V substrates. As an alternative, a hybrid solar cell was proposed by LaPierre et al.1 The cell geometry, which combines a 2D Si bottom-cell with a nanowire (NW) top-cell in a tandem device, presents a theoretical efficiency record of 34% when the top-cell band gap lies around 1.7 eV,.
In this work, we report the elaboration, nanoscale characterization and device fabrication of solar cells based on axial junction GaAsP NWs. Organized GaAsP NWs were grown on patterned SiO2/Si(111) substrates by MBE. Junction was axially created during the growth by incorporating different doping impurities (Be for p- and Si for n-doping). In-situ surface passivation using a radial GaP shell was applied to reduce non-radiative recombinations on surface states. Local I-V characteristics and electron beam induced current (EBIC) microscopy under different biases were used to probe the electrical properties and the generation patterns of individual NWs. The doping concentrations and the minority carrier diffusion lengths were extracted from the EBIC generation profiles. Macroscopic devices based on NW arrays were fabricated by dielectric encapsulation and ITO contacting. Top view EBIC analyses were applied to probe the device homogeneity.
 R.R. LaPierre et al., J. Appl. Phys. 110 (2011), 014310.
 S. Bu et al., Appl. Phys. Lett. 102 (2013), 031106.
 C. Himwas et al., Nanotechnology. 28 (2017), 495707.