Prof. Fabien Pascal Profile

Prof. Fabien Pascal

at Univ Montpellier

SPIE Involvement:

Author

Proceedings Article | 22 June 2007 Paper

Low-frequency noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors: impact of carbon concentration

Jeremy Raoult, Colette Delseny, Fabien Pascal, Mathieu Marin, M. Jamal Deen

Proceedings Volume 6600, 66000G (2007) https://doi.org/10.1117/12.724559

KEYWORDS: Carbon, Transistors, Silicon, Interference (communication), Heterojunctions, Silicon carbide, Boron, Chemical species, Temperature metrology, Diffusion

Read Abstract +

We have investigated the influence of carbon concentration on the low frequency noise (LFN) of Si/SiGe:C Heterojunction Bipolar Transistors (HBTs). The HBTs are supplied by ST-Microelectronics Crolles and are based on a 0.13 &mgr;m BiCMOS technology. Three types of transistors were studied; they only differ by the amount of carbon incorporated. When carbon is incorporated, representative noise spectra of the input current spectral density, Si_B, show important generation-recombination (G-R) components, while no such components are observed in carbon free transistors. When the 1/f noise component is unambiguously observed, the associated figure of merit K_B has a very good value close to 4.10^-10 &mgr;m². In this paper we focus on the analysis of the G-R components associated with the presence of the carbon. Most of the observed Lorentzians are associated with Random Telegraph Signal (RTS) noise. No RTS noise is found in carbon free devices. The RTS noise appears to be due to electrically active defects formed by the addition of carbon, typically observed for concentrations above the bulk solid solubility limit in silicon. The RTS noise, amplitude &Dgr;IB and the mean pulse widths (t_H, t_L), are analyzed as a function of bias voltage and temperature. The RTS amplitude is found to scale with the base current and to decrease exponentially with temperature, independently of the carbon concentration. The mean pulse widths are found to decrease rapidly with bias voltage, as 1/exp(qV_BE/kT) or stronger. Our results confirm that electrically active C-related defects are localized in the base-emitter junction, and the RTS amplitude is explained by a model based on voltage barrier height fluctuations across the base-emitter junction induced by trapped carriers in the space charge region. The observed bias dependence of mean pulse widths seems to indicate that two capture processes are involved, electron and hole capture. These C-related defects behave like recombination centers with deep energy levels rather than electron or hole traps involving trapping-detrapping process.

Proceedings Article | 25 May 2004 Paper

Influence of the emitter-base junction depth on the low frequency noise of Si/SiGeC heterojunction bipolar transistors

Cyril Chay, Patrice Benoit, Colette Delseny, Fabien Pascal, Pierre Llinares, Helene Baudry, Jean-Charles Vildeuil

Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.546967

KEYWORDS: Silicon, Transistors, Resistance, Heterojunctions, Carbon, Doping, Boron, Silicon carbide, Ranging, Germanium

Read Abstract +

Proceedings Article | 25 May 2004 Paper

1/f noise in GaN/AlGaN heterostructure field effect transistors under condition of strong geometric magnetoresistance

Sergey Rumyantsev, Michael Shur, Wojciech Knap, Nina Dyakonova, Fabien Pascal, Alain Hoffman, Y. Ghuel, C. Gaquiere, D. Theron

Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.546748

KEYWORDS: Magnetism, Resistance, Field effect transistors, Heterojunctions, Gallium nitride, Transistors, Aluminum nitride, Temperature metrology, Gallium arsenide, Metalorganic chemical vapor deposition

Read Abstract +

Proceedings Article | 12 May 2003 Paper

Comparison of low-frequency noise in III-V and Si/SiGe HBTs

Fabien Pascal, Sylvie Guenard-Jarrix, Colette Delseny, Annick Penarier, Cyril Chay, M. Jamal Deen

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.488966

KEYWORDS: Transistors, Silicon, Surface plasmons, Silicon carbide, Germanium, Oxides, Resistance, Gallium arsenide, Heterojunctions, Analog electronics

Read Abstract +

Proceedings Article | 12 May 2003 Open Access

Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

M. Jamal Deen, Fabien Pascal

Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.488850

KEYWORDS: Oxides, Transistors, Interfaces, Field effect transistors, Silicon, Analog electronics, Fluorine, Integrated circuits, Information technology, Resistance

Read Abstract +

DOWNLOAD PAPER

Conference Committee Involvement (2)

Noise in Devices and Circuits II

26 May 2004 | Maspalomas, Gran Canaria Island, Spain

Noise in Devices and Circuits

2 June 2003 | Santa Fe, New Mexico, United States

Keywords/Phrases

Search In:

Publication Years