Mr. Franck Foussadier Profile

Franck Foussadier

RET Engineer at STMicroelectronics

SPIE Involvement:

Author

Publications (20)

Proceedings Article | 24 March 2016 Paper

Paper

Resist 3D model based OPC for 28nm metal process window enlargement

P. Fanton, J. C. Le Denmat, C. Gardiola, A. Pelletier, F. Foussadier, C. Gardin, J. Planchot, A. Szucs, O. Ndiaye, N. Martin, L. Depre, F. Robert

Proceedings Volume 9778, 97781U (2016) https://doi.org/10.1117/12.2218916

KEYWORDS: 3D modeling, Optical proximity correction, Metals, 3D metrology, Optical lithography, Evolutionary algorithms, Photomasks, Scanning electron microscopy, Critical dimension metrology, Image processing, Etching, Calibration, Artificial intelligence, Reliability

Read Abstract +

Proceedings Article | 13 March 2012 Paper

Paper

Demonstration of an effective flexible mask optimization (FMO) flow

Charlotte Beylier, Nicolas Martin, Vincent Farys, Franck Foussadier, Emek Yesilada, Frederic Robert, Stanislas Baron, Russell Dover, Hua-yu Liu

Proceedings Volume 8326, 832616 (2012) https://doi.org/10.1117/12.916168

KEYWORDS: SRAF, Source mask optimization, Lithography, Optical proximity correction, Photomasks, Resolution enhancement technologies, Scanning electron microscopy, Lithium, Image enhancement, Computational lithography

Read Abstract +

Proceedings Article | 8 April 2011 Paper

Paper

Convergence study for lines, spaces between standard OPC, local, and more holistic OPC

L. Perraud, Y. Trouiller, E. Yesilada, F. Robert, F. Foussadier, V. Farys, C. Gardin

Proceedings Volume 7969, 79691P (2011) https://doi.org/10.1117/12.869830

KEYWORDS: Optical proximity correction, Detection and tracking algorithms, Computer simulations, Extreme ultraviolet, Genetic algorithms, Standards development, Photomasks, Extreme ultraviolet lithography, Lithography, Lanthanum

Read Abstract +

Proceedings Article | 3 April 2010 Paper

Paper

Tracking of design related defects hidden by random defectivity in production environment

J. Le Denmat, V. Charbois, L. Tetar, M. Luche, G. Kerrien, F. Robert, E. Yesilada, F. Foussadier, L. Couturier, L. Karsenti, M. Geshel

Proceedings Volume 7641, 76410Y (2010) https://doi.org/10.1117/12.848763

KEYWORDS: Semiconducting wafers, Inspection, Wafer inspection, Optical alignment, Defect inspection, Finite element methods, Statistical analysis, Optical proximity correction, Etching, Control systems

Read Abstract +

Proceedings Article | 23 March 2009 Paper

Paper

Outliers detection by fuzzy classification method for model building

Mame Kouna Top, Yorick Trouiller, Vincent Farys, David Fuard, Emek Yesilada, Catherine Martinelli, Mazen Said, Franck Foussadier, Patrick Schiavone

Proceedings Volume 7272, 72721G (2009) https://doi.org/10.1117/12.812955

KEYWORDS: Mahalanobis distance, Critical dimension metrology, Optical proximity correction, Calibration, Fuzzy logic, Data modeling, Reliability, Scanning electron microscopy, Lithography, Optics manufacturing

Read Abstract +

Proceedings Article | 16 March 2009 Paper

Paper

Impact of modelisation pixel size on OPC consistency

Franck Foussadier, Emek Yesilada, Jean-Christophe Le Denmat, Yorick Trouiller, Vincent Farys, Frédéric Robert, Gurwan Kerrien, Christian Gardin, Loic Perraud, Florent Vautrin, Alexandre Villaret, Catherine Martinelli, Jonathan Planchot, Jean Luc Di-Maria, Mazen Saied, Mame Kouna Top

Proceedings Volume 7274, 727416 (2009) https://doi.org/10.1117/12.814047

KEYWORDS: Optical proximity correction, Critical dimension metrology, Computer simulations, Optical simulations, Optical lithography, Current controlled current source, Optical imaging, Databases, Process modeling, Photomasks

Read Abstract +

Proceedings Article | 19 May 2008 Paper

Paper

Model-based mask verification on critical 45nm logic masks

F. Sundermann, F. Foussadier, T. Takigawa, J. Wiley, A. Vacca, L. Depre, G. Chen, S. Bai, J.-S. Wang, R. Howell, V. Arnoux, K. Hayano, S. Narukawa, S. Kawashima, H. Mohri, N. Hayashi, H. Miyashita, Y. Trouiller, F. Robert, F. Vautrin, G. Kerrien, J. Planchot, C. Martinelli, J. L. Di-Maria, V. Farys, B. Vandewalle, L. Perraud, J. C. Le Denmat, A. Villaret, C. Gardin, E. Yesilada, M. Saied

Proceedings Volume 7028, 70280U (2008) https://doi.org/10.1117/12.793037

KEYWORDS: Photomasks, Semiconducting wafers, Bridges, Scanning electron microscopy, Critical dimension metrology, Process modeling, Optical proximity correction, Reticles, Model-based design, Logic

Read Abstract +

Proceedings Article | 22 March 2008 Paper

Paper

Process control for 45 nm CMOS logic gate patterning

Bertrand Le Gratiet, Pascal Gouraud, Enrique Aparicio, Laurene Babaud, Karen Dabertrand, Mathieu Touchet, Stephanie Kremer, Catherine Chaton, Franck Foussadier, Frank Sundermann, Jean Massin, Jean-Damien Chapon, Maxime Gatefait, Blandine Minghetti, Jean de-Caunes, Daniel Boutin

Proceedings Volume 6922, 69220Z (2008) https://doi.org/10.1117/12.776889

KEYWORDS: Semiconducting wafers, Etching, Critical dimension metrology, Optical lithography, Scatterometry, Reticles, Scanners, Photomasks, Process control, Immersion lithography

Read Abstract +

Proceedings Article | 12 March 2008 Paper

Paper

Study of SRAF placement for contact at 45 nm and 32 nm node

V. Farys, F. Robert, C. Martinelli, Y. Trouiller, F. Sundermann, C. Gardin, J. Planchot, G. Kerrien, F. Vautrin, M. Saied, E. Yesilada, F. Foussadier, A. Villaret, L. Perraud, B. Vandewalle, J. C. Le Denmat, M. K. Top

Proceedings Volume 6924, 69242Z (2008) https://doi.org/10.1117/12.774091

KEYWORDS: SRAF, Optical proximity correction, Lithography, Eye, Photomasks, Immersion lithography, Manufacturing, Logic, Switching, Printing

Read Abstract +

Proceedings Article | 16 November 2007 Paper

Paper

3D mask modeling with oblique incidence and mask corner rounding effects for the 32nm node

Mazen Saied, Franck Foussadier, Jérôme Belledent, Yorick Trouiller, Isabelle Schanen, Emek Yesilada, Christian Gardin, Jean Christophe Urbani, Frank Sundermann, Frédéric Robert, Christophe Couderc, Florent Vautrin, Laurent LeCam, Gurwan Kerrien, Jonathan Planchot, Catherine Martinelli, Bill Wilkinson, Yves Rody, Amandine Borjon, Nicolo Morgana, Jean-Luc Di-Maria, Vincent Farys

Proceedings Volume 6730, 673050 (2007) https://doi.org/10.1117/12.752613

KEYWORDS: Photomasks, Optical proximity correction, 3D modeling, Semiconducting wafers, Diffraction, Scattering, Near field, Lithographic illumination, Systems modeling, Near field optics

Read Abstract +

Proceedings Article | 1 November 2007 Paper

Paper

Model-based mask verification

Frank Foussadier, Frank Sundermann, Anthony Vacca, Jim Wiley, George Chen, Tadahiro Takigawa, Katsuya Hayano, Syougo Narukawa, Satoshi Kawashima, Hiroshi Mohri, Naoya Hayashi, Hiroyuki Miyashita, Y. Trouiller, F. Robert, F. Vautrin, G. Kerrien, J. Planchot, C. Martinelli, J.L. Di-Maria, Vincent Farys

Proceedings Volume 6730, 673051 (2007) https://doi.org/10.1117/12.752609

KEYWORDS: Photomasks, Optical proximity correction, Data modeling, Semiconducting wafers, Process modeling, Critical dimension metrology, Lithography, Model-based design, Wafer-level optics, Scanning electron microscopy

Read Abstract +

Proceedings Article | 14 May 2007 Paper

Paper

Characterization of inverse SRAF for active layer trenches on 45-nm node

Jean-Christophe Urbani, Jean-Damien Chapon, Jérôme Belledent, Amandine Borjon, Christophe Couderc, Jean-Luc Di-Maria, Vincent Farys, Franck Foussadier, Christian Gardin, Gurwan Kerrien, Laurent LeCam, Catherine Martinelli, Patrick Montgomery, Nicolo Morgana, Jonathan Planchot, Frédéric Robert, Yves Rody, Mazen Saied, Frank Sundermann, Yorick Trouiller, Florent Vautrin, Bill Wilkinson, Emek Yesilada

Proceedings Volume 6607, 66071C (2007) https://doi.org/10.1117/12.728960

KEYWORDS: SRAF, Optical proximity correction, Printing, Optical lithography, Silicon, Photomasks, Semiconducting wafers, Inspection, Optical simulations, Lithography

Read Abstract +

Proceedings Article | 3 May 2007 Paper

Paper

OPC structures for maskshops qualification for the CMOS65nm and CMOS45nm nodes

Frank Sundermann, Yorick Trouiller, Jean-Christophe Urbani, Christophe Couderc, Jérôme Belledent, Amandine Borjon, Franck Foussadier, Christian Gardin, Laurent LeCam, Yves Rody, Mazen Saied, Emek Yesilada, Catherine Martinelli, Bill Wilkinson, Florent Vautrin, Nicolo Morgana, Frederic Robert, Patrick Montgomery, Gurwan Kerrien, Jonathan Planchot, Vincent Farys, Jean-Luc Di Maria

Proceedings Volume 6533, 65330E (2007) https://doi.org/10.1117/12.736927

KEYWORDS: Optical proximity correction, Reticles, Metals, Photoresist processing, Semiconducting wafers, Critical dimension metrology, Metrology, Manufacturing, Cadmium, Semiconductors

Read Abstract +

Several qualification stages are required for new maskshop tools, first step is done by the maskshop internally. Taking a new writer for example, the maskshop will review the basic factory and site acceptance tests, including CD uniformity, CD linearity, local CD errors and registration errors. The second step is to have dedicated OPC (Optical Proximity Correction) structures from the wafer fab. These dedicated OPC structures will be measured by the maskshop to get a reticle CD metrology trend line. With this trend line, we can: - ensure the stability at reticle level of the maskshop processes - put in place a matching procedure to guarantee the same OPC signature at reticle level in case of any internal maskshop process change or new maskshop evaluation. Changes that require qualification could be process changes for capacity reasons, like introducing a new writer or a new manufacturing line, or for capability reasons, like a new process (new developer tool for example) introduction. Most advanced levels will have dedicated OPC structures. Also dedicated maskshop processes will be monitored with these specific OPC structures. In this paper, we will follow in detail the different reticle CD measurements of dedicated OPC structures for the three advanced logic levels of the 65nm node: poly level, contact level and metal level. The related maskshop's processes are - for poly: eaPSM 193nm with a nega CAR (Chemically Amplified Resist) process for Clear Field L/S (Lines & Space) reticles - for contact: eaPSM 193nm with a posi CAR process for Dark Field Holes reticles - for metal1: eaPSM 193nm with a posi CAR process for Dark Field L/S reticles. For all these structures, CD linearity, CD through pitch, length effects, and pattern density effects will be monitored. To average the metrology errors, the structures are placed twice on the reticle. The first part of this paper will describe the different OPC structures. These OPC structures are close to the DRM (Design Rule Manual) of the dedicated levels to be monitored. The second part of the paper will describe the matching procedure to ensure the same OPC signature at reticle level. We will give an example of an internal maskshop matching exercise, which could be needed when we switched from an already qualified 50 KeV tool to a new 50 KeV tool. The second example is the same matching exercise of our 65nm OPC structures, but with two different maskshops. The last part of the paper will show first results on dedicated OPC structures for the 45nm node.

Proceedings Article | 27 March 2007 Paper

Paper

Three-dimensional mask effects and source polarization impact on OPC model accuracy and process window

M. Saied, F. Foussadier, J. Belledent, Y. Trouiller, I. Schanen, C. Gardin, J. C. Urbani, P. K. Montgomery, F. Sundermann, F. Robert, C. Couderc, F. Vautrin, G. Kerrien, J. Planchot, E. Yesilada, C. Martinelli, B. Wilkinson, A. Borjon, L. Le-Cam, J. L. Di-Maria, Y. Rody, N. Morgana, Vincent Farys

Proceedings Volume 6520, 65204Q (2007) https://doi.org/10.1117/12.715120

KEYWORDS: 3D modeling, Photomasks, Optical proximity correction, Polarization, Process modeling, Lithium, Optical lithography, Information technology, Semiconducting wafers, Semiconductors

Read Abstract +

Proceedings Article | 20 October 2006 Paper

Paper

Sensitivity of a variable threshold model toward process and modeling parameters

Mazen Saied, Franck Foussadier, Yorick Trouiller, Jérôme Belledent, Kevin Lucas, Isabelle Schanen, Amandine Borjon, Christophe Couderc, Christian Gardin, Laurent LeCam, Yves Rody, Frank Sundermann, Jean-Christophe Urbani, Emek Yesilada

Proceedings Volume 6349, 634919 (2006) https://doi.org/10.1117/12.686666

KEYWORDS: Calibration, Process modeling, Data modeling, Optical proximity correction, Mathematical modeling, Photoresist processing, Model-based design, Photomasks, Image processing, Image quality

Read Abstract +

Proceedings Article | 21 March 2006 Paper

Paper

Process window OPC verification: dry versus immersion lithography for the 65nm node

Amandine Borjon, Jerome Belledent, Yorick Trouiller, Kevin Lucas, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Yves Rody, Christian Gardin, Frank Foussadier, Patrick Schiavone

Proceedings Volume 6154, 61544D (2006) https://doi.org/10.1117/12.657056

KEYWORDS: Immersion lithography, Lithography, Calibration, Optical proximity correction, Printing, Optical transfer functions, Data modeling, Process modeling, Convolution, Optical lithography

Read Abstract +

Proceedings Article | 5 November 2005 Paper

Paper

Through-process window resist modelling strategies for the 65 nm node

Amandine Borjon, Jerôme Belledent, Yorick Trouiller, Kyle Patterson, Kevin Lucas, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron, Yves Rody, Christian Gardin, Franck Foussadier, Patrick Schiavone

Proceedings Volume 5992, 599219 (2005) https://doi.org/10.1117/12.632096

KEYWORDS: Data modeling, Calibration, Statistical modeling, Printing, Critical dimension metrology, Electroluminescence, Convolution, Modeling, Mathematical modeling, Computer simulations

Read Abstract +

Proceedings Article | 28 June 2005 Paper

Paper

Correction of long-range effects applied to the 65-nm node

Jerome Belledent, James Word, Yorick Trouiller, Christophe Couderc, Corinne Miramond, Olivier Toublan, Jean-Damien Chapon, Stanislas Baron, Amandine Borjon, Franck Foussadier, Christian Gardin, Kevin Lucas, Kyle Patterson, Yves Rody, Frank Sundermann, Jean-Christophe Urbani

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617433

KEYWORDS: Critical dimension metrology, Etching, Photomasks, Convolution, Optical proximity correction, Electrons, Point spread functions, Optical lithography, Scattering, Light scattering

Read Abstract +

Proceedings Article | 28 June 2005 Paper

Paper

Dual layer patterning failures in complex RET processes using ORC tools and pre- or post-optical proximity correction strategy

Christophe Couderc, Jerome Belledent, Amandine Borjon, Yorick Trouiller, Frank Sundermann, Kevin Lucas, Jean-Christophe Urbani, Franck Foussadier, Yves Rody, Kyle Patterson, Stanislas Baron

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617412

KEYWORDS: Optical proximity correction, Resolution enhancement technologies, Multilayers, Optical lithography, Photomasks, Optics manufacturing, Semiconducting wafers, Metals, Manufacturing, Lithography

Read Abstract +

Proceedings Article | 5 May 2005 Paper

Paper

65nm OPC and design optimization by using simple electrical transistor simulation

Yorick Trouiller, Thierry Devoivre, Jerome Belledent, Franck Foussadier, Amandine Borjon, Kyle Patterson, Kevin Lucas, Christophe Couderc, Frank Sundermann, Jean-Christophe Urbani, Stanislas Baron, Yves Rody, Jean-Damien Chapon, Franck Arnaud, Jorge Entradas

Proceedings Volume 5756, (2005) https://doi.org/10.1117/12.600887

KEYWORDS: Transistors, Ions, Optical proximity correction, Lithography, Optical lithography, Lithium, Logic, Photomasks, Lithographic illumination, Manufacturing

Read Abstract +

Showing 5 of 20 publications

SIGN IN TO:

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Advertisement

Advertisement