Mr. Frederick W. Clarke Profile

Frederick W. Clarke

Electronics Engineer at US Army Space and Missile Defense Command

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Author

Publications (7)

Proceedings Article | 8 February 2007 Paper

Epitaxial growth and characterization of AlGaN/GaN HEMT devices on SiC substrates for RF applications

Ashok Sood, Yash Puri, Frederick Clarke, Jie Deng, James Hwang, Steven Brierley, M. Asif Khan, Amir Dabiran, Peter Chow, Oleg Laboutin, Roger Welser

Proceedings Volume 6473, 647318 (2007) https://doi.org/10.1117/12.704201

KEYWORDS: Field effect transistors, Semiconducting wafers, Silicon carbide, Metalorganic chemical vapor deposition, Gallium nitride, Aluminum, Reflectivity, Defense technologies, Wafer-level optics, Gallium

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Proceedings Article | 3 March 2006 Paper

Growth and characterization of AlGaN/GaN epitaxial layers by MOCVD on SiC substrates for RF device applications

Ashok Sood, Rajwinder Singh, Yash Puri, Frederick Clarke, Oleg Laboutin, Paul Deluca, Roger Wesler, Jie Deng, James C. M. Hwang

Proceedings Volume 6121, 61210D (2006) https://doi.org/10.1117/12.651122

KEYWORDS: Field effect transistors, Semiconducting wafers, Etching, Gallium nitride, Metalorganic chemical vapor deposition, Resistance, Silicon carbide, Spatial light modulators, Reflectivity, Transistors

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Proceedings Article | 22 October 2004 Paper

Measurement of electron effective mass ratios in Hg1-xCdxTe for 0.20 ≤ x ≤ 0.30 between 77K and 296K

F. Clarke, S. Balevieius, J. McDonald, J. Grisham

Proceedings Volume 5564, (2004) https://doi.org/10.1117/12.567426

KEYWORDS: Mercury cadmium telluride, Indium, Thermal effects, Temperature metrology, Semiconductors, FT-IR spectroscopy, Mercury, Cadmium, Tellurium, Spectroscopy

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Proceedings Article | 20 October 2004 Paper

Development of high-performance AlGaN/GaN high-electron mobility transistors for RF applications

Ashok Sood, Elwood Egerton, Yash Puri, Frederick Clarke, James Hwang, Amir Dabiran, Peter Chow, Tom Anderson, Avi Gupta, Andy Souzis, Ilya Zwieback

Proceedings Volume 5550, (2004) https://doi.org/10.1117/12.561584

KEYWORDS: Field effect transistors, Silicon carbide, Gallium nitride, Crystals, Semiconducting wafers, Transistors, Silicon, Doping, Gallium arsenide, Amplifiers

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Proceedings Article | 19 August 1996 Paper

Optical characterization technique for n-type semiconductors including infrared detector and other optical materials

Frederick Clarke

Proceedings Volume 2775, (1996) https://doi.org/10.1117/12.246748

KEYWORDS: Mercury cadmium telluride, Absorption, Gallium arsenide, Silicon, N-type semiconductors, Plasma, Infrared detectors, Contamination, Refractive index, Optical testing

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Proceedings Article | 1 September 1995 Paper

Nondestructive characterization technique for most n-type semiconductors, including infrared detector materials

Frederick Clarke

Proceedings Volume 2554, (1995) https://doi.org/10.1117/12.218179

KEYWORDS: Absorption, Mercury cadmium telluride, Plasma, Silicon, Infrared detectors, Nondestructive evaluation, Gallium arsenide, N-type semiconductors, Temperature metrology, Neodymium

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Proceedings Article | 13 July 1994 Paper

Magneto-optical characterization of HgCdTe thin films

A. Syllaios, Jeff Anderson, Luigi Colombo, Chris Littler, G. Brostow, Charles Christensen, John Grisham, Frederick Clarke

Proceedings Volume 2228, (1994) https://doi.org/10.1117/12.179673

KEYWORDS: Mercury cadmium telluride, Thin films, Infrared radiation, Absorption, Statistical analysis, Nondestructive evaluation, Diagnostics, Spectroscopy

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Showing 5 of 7 publications

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