"Extreme" adaptive optics systems are optimized for ultra-high contrast applications, such as ground-based extrasolar planet detection. The Extreme Adaptive Optics Testbed at UC Santa Cruz is being used to investigate and develop technologies for high-contrast imaging, especially wavefront control. We use a simple optical design to minimize wavefront error and maximize the experimentally achievable contrast. A phase shifting diffraction interferometer (PSDI) measures wavefront errors with sub-nm precision and accuracy for metrology and wavefront control. Previously, we have demonstrated RMS wavefront errors of <1.5 nm and a contrast of >107 over a substantial region using a shaped pupil without a deformable mirror. Current work includes the installation and characterization of a 1024-actuator Micro-Electro-Mechanical-Systems (MEMS) deformable mirror, manufactured by Boston Micro-Machines for active wavefront control. Using the PSDI as the wavefront sensor we have flattened the deformable mirror to <1 nm within the controllable spatial frequencies and measured a contrast in the far field of >106. Consistent flattening required testing and characterization of the individual actuator response, including the effects of dead and low-response actuators. Stability and repeatability of the MEMS devices was also tested. Ultimately this testbed will be used to test all aspects of the system architecture for an extrasolar planet-finding AO system.
Since 1993, research in the fabrication of extreme ultraviolet (EUV) optical imaging systems, conducted at Lawrence Berkeley National Laboratory (LBNL) and Lawrence Livermore National Laboratory (LLNL), has produced the highest resolution optical systems ever made. We have pioneered the development of ultra-high-accuracy optical testing and alignment methods, working at extreme ultraviolet wavelengths, and pushing wavefront-measuring interferometry into the 2-20-nm wavelength range (60-600 eV). These coherent measurement techniques, including lateral shearing interferometry and phase-shifting point-diffraction interferometry (PS/PDI) have achieved RMS wavefront measurement accuracies of 0.5-1-Å and better for primary aberration terms, enabling the creation of diffraction-limited EUV optics. The measurement accuracy is established using careful null-testing procedures, and has been verified repeatedly through high-resolution imaging. We believe these methods are broadly applicable to the advancement of short-wavelength optical systems including space telescopes, microscope objectives, projection lenses, synchrotron beamline optics, diffractive and holographic optics, and more. Measurements have been performed on a tunable undulator beamline at LBNL's Advanced Light Source (ALS), optimized for high coherent flux; although many of these techniques should be adaptable to alternative ultraviolet, EUV, and soft x-ray light sources. To date, we have measured nine prototype all-reflective EUV optical systems with NA values between 0.08 and 0.30 (f/6.25 to f/1.67). These projection-imaging lenses were created for the semiconductor industry's advanced research in EUV photolithography, a technology slated for introduction in 2009-13. This paper reviews the methods used and our program's accomplishments to date.
The azimuthal Zernike coefficients for shells of Zernike functions with shell numbers n<N may be determined by making measurements at N equally spaced rotational positions. However, these measurements do not determine the coefficients of any of the purely radial Zernike functions. Label the circle that the azimuthal Zernikes are measured in as circle A. Suppose that the azimuthal Zernike coefficients for n<N are also measured in a smaller circle B which is inside circle A but offset so that it is tangent to circle A and so that it has the center of circle A just inside its circular boundary. The diameter of circle B is thus only slightly larger than half the diameter of circle A. From these two sets of measurements, all the Zernike coefficients may be determined for n<N. However, there are usually unknown small rigid body motions of the optic between measurements. Then all the Zernike coefficients for n<N except for piston, tilts, and focus may be determined. We describe the exact mathematical algorithm that does this and describe an interferometer which measures the complete wavefront from pinholes in pinhole aligners. These pinhole aligners are self-contained units which include a fiber optic, focusing optics, and a "pinhole mirror". These pinhole aligners can then be used in another interferometer so that its errors would then be known. Physically, the measurements in circles A and B are accomplished by rotating each pinhole aligner about an aligned axis, then about an oblique axis. Absolute measurement accuracies better than 0.2 nm were achieved.
We have built and calibrated a set of 532-nm wavelength wavefront reference sources that fill a numerical aperture of 0.3. Early data show that they have a measured departure from sphericity of less than 0.2 nm RMS (0.4 milliwaves) and a reproducibility of better than 0.05 nm rms. These devices are compact, portable, fiber-fed, and are intended as sources of measurement and reference waves in wavefront measuring interferometers used for metrology of EUVL optical elements and systems. Keys to wave front accuracy include fabrication of an 800-nm pinhole in a smooth reflecting surface as well as a calibration procedure capable of measuring axisymmetric and non-axisymmetric errors.
As adaptive optics (AO) matures, it becomes possible to envision AO systems oriented towards specific important scientific goals rather than general-purpose systems. One such goal for the next decade is the direct imaging detection of extrasolar planets. An "extreme" adaptive optics (ExAO) system optimized for extrasolar planet detection will have very high actuator counts and rapid update rates - designed for observations of bright stars - and will require exquisite internal calibration at the nanometer level. In addition to extrasolar planet detection, such a system will be capable of characterizing dust disks around young or mature stars, outflows from evolved stars, and high Strehl ratio imaging even at visible wavelengths. The NSF Center for Adaptive Optics has carried out a detailed conceptual design study for such an instrument, dubbed the eXtreme Adaptive Optics Planet Imager or XAOPI. XAOPI is a 4096-actuator AO system, notionally for the Keck telescope, capable of achieving contrast ratios >107 at angular separations of 0.2-1". ExAO system performance analysis is quite different than conventional AO systems - the spatial and temporal frequency content of wavefront error sources is as critical as their magnitude. We present here an overview of the XAOPI project, and an error budget highlighting the key areas determining achievable contrast. The most challenging requirement is for residual static errors to be less than 2 nm over the controlled range of spatial frequencies. If this can be achieved, direct imaging of extrasolar planets will be feasible within this decade.
"Extreme" adaptive optics systems are optimized for ultra-high-contrast applications, such as ground-based extrasolar planet detection. The Extreme Adaptive Optics Testbed at UC Santa Cruz is being used to investigate and develop technologies for high-contrast imaging, especially wavefront control. A simple optical design allows us to minimize wavefront error and maximize the experimentally achievable contrast before progressing to a more complex set-up. A phase shifting diffraction interferometer is used to measure wavefront errors with sub-nm precision and accuracy. We have demonstrated RMS wavefront errors of <1.3 nm and a contrast of >10-7 over a substantial region using a shaped pupil. Current work includes the installation and characterization of a 1024-actuator Micro-Electro-Mechanical-Systems (MEMS) deformable mirror, manufactured by Boston Micro-Machines, which will be used for wavefront control. In our initial experiments we can flatten the deformable mirror to 1.8-nm RMS wavefront error within a control radius of 5-13 cycles per aperture. Ultimately this testbed will be used to test all aspects of the system architecture for an extrasolar planet-finding AO system.
The success of recent static printing experiments at Lawrence Berkeley National Laboratory’s Advanced Light Source (ALS) using the EUV LLC Engineering Test Stand (ETS) Set-2 optic has demonstrated the utility of synchrotron-based EUV exposure stations. Although not viable light sources for commercial lithography, synchrotrons provide clean, convenient, and extremely flexible sources for developmental microfield lithography. The great flexibility of synchrotron-based illumination arises from the fact that such sources facilitate active coherence reduction, thus enabling the coherence function, or pupil fill, to be actively sculpted in real time.
As the commercialization of EUV progresses, the focus of developmental EUV lithography is shifting from low numerical aperture (NA) tools such as the 0.1-NA ETS to higher-NA tools such as the 0.3-NA Micro Exposure Tool (MET). To support printing with MET optics at the ALS, a new printing station has been developed, relying on a scanning illuminator to provide programmable coherence (pupil-fill) control. The illuminator is designed to operate up to a coherence factor (s) of 1 and support the full 200′600 design printed field of view. In addition to a new illuminator design, new focus sensing and dose-control systems have also been implemented. Here we describe the MET printing capabilities in detail and present preliminary printing results with the Sematech Set-2 MET optic.
Ground based adaptive optics is a potentially powerful technique for direct imaging detection of extrasolar planets. Turbulence in the Earth's atmosphere imposes some fundamental limits, but the large size of ground-based telescopes compared to spacecraft can work to mitigate this. We are carrying out a design study for a dedicated ultra-high-contrast system, the eXtreme Adaptive Optics Planet Imager (XAOPI), which could be deployed on an 8-10m telescope in 2007. With a 4096-actuator MEMS deformable mirror it should achieve Strehl >0.9 in the near-IR. Using an innovative spatially filtered wavefront sensor, the system will be optimized to control scattered light over a large radius and suppress artifacts caused by static errors. We predict that it will achieve contrast levels of 107-108 at angular separations of 0.2-0.8" around a large sample of stars (R<7-10), sufficient to detect Jupiter-like planets through their near-IR emission over a wide range of ages and masses. We are constructing a high-contrast AO testbed to verify key concepts of our system, and present preliminary results here, showing an RMS wavefront error of <1.3 nm with a flat mirror.
Full-field imaging with a developmental projection optic box (POB 1) was successfully demonstrated in the alpha tool Engineering Test Stand (ETS) last year. Since then, numerous improvements, including laser power for the laser-produced plasma (LPP) source, stages, sensors, and control system have been made. The LPP has been upgraded from the 40 W LPP cluster jet source used for initial demonstration of full-field imaging to a high-power (1500 W) LPP source with a liquid Xe spray jet. Scanned lithography at various laser drive powers of >500 W has been demonstrated with virtually identical lithographic performance.
We describe a new technical approach for observations of Galactic and extra-Galactic soft X-ray sources with ultra-high angular resolution. The technique is based on the use of recently developed diffraction-limited, normal-incidence mirror substrates and ultra-short-period multilayer coatings, tuned to specific bright emission lines in the range 16 < l < 40 Å, for the construction of a diffraction-limited X-ray telescope. Sub-milliarcsecond resolution could be achieved in a moderately-sized Cassegrain or prime-focus geometry, while resolution of order 0.01 microarcseconds could be achieved using a synthetic aperture X-ray interferometer constructed from an array of such telescopes spread over a 50 km baseline. We describe our technical approach in detail and outline some of the observations that would become possible with the proposed instrumentation.
Detecting life-bearing Earth-like planets (ELPs) is one of NASA's highest priority goals. In this paper we derive the wave-front requirements for optical detection of ELPs with an 8-m space telescope and coronagraph. We will present detailed simulations that show that an 8-m coronagraphic space telescope can detect Earth-sized planets around nearby stars, provided that the wavefront at the detector is corrected to an RMS error of ~λ/3000. We use the derived wavefront error to set requirements for a deformable mirror based on micro-electro-mechanical systems technology.
The EUV Engineering Test Stand (ETS) has demonstrated the printing of 100-nm-resolution scanned images. This milestone was first achieved while the ETS operated in an initial configuration using a low power laser and a developmental projection system, PO Box 1. The drive laser has ben upgraded to a single chain of the three-chain Nd:YAG laser developed by TRW. The result in exposure time is approximately 4 seconds for static exposures. One hundred nanometer dense features have been printed in step-and-scan operation with the same image quality obtained in static printing. These experiments are the first steps toward achieving operation using all three laser chains for a total drive laser power of 1500 watts. In a second major upgrade the developmental wafer stage platen, used to demonstrate initial full-field imaging, has been replaced with the final low-expansion platen made of Zerodur. Additional improvements in the hardware and control software have demonstrated combined x and jitter from 2 to 4 nm RMS Over most of the wafer stage travel range, while scanning at the design scan speed of 10 mm/s at the wafer. This value, less than half of the originally specified jitter, provides sufficient stability to support printing of 70 nm features as planned, when the upgraded projection system is installed. The third major upgrade will replace PO Box 1 with an improved projection system, PO Box 2, having lower figure error and lower flare. In addition to these upgrades, dose sensors at the reticle and wafer planes and an EUV- sensitive aerial image monitor have been integrated into the ETS. This paper reports on ETS system upgrades and the impact on system performance.
Future extreme ultraviolet lithography (EUVL) steppers will, in all likelihood, have six-mirror projection cameras. To operate at the diffraction limit over an acceptable depth of focus each aspheric mirror will have to be fabricated with an absolute figure accuracy approaching 100pm rms. We are currently developing visible light interferometry to meet this need based on modifications of our present phase shifting diffraction interferometry (PSDI) methodology where we achieved an absolute accuracy of 250pm. The basic PSDI approach has been further simplified, using lensless imaging based on computational diffractive back-propagation, to eliminate auxiliary optics that typically limit measurement accuracy. Small remaining error sources, related to geometric positioning, CCD camera pixel spacing and laser wavelength, have been modeled and measured. Using these results we have estimated the total system error for measuring off-axis aspheric EUVL mirrors with this new approach to interferometry.
The Engineering Test Stand (ETS) is an EUV lithography tool designed to demonstrate full-field EUV imaging and provide data required to accelerate production-tool development. Early lithographic results and progress on continuing functional upgrades are presented and discussed. In the ETS a source of 13.4 nm radiation is provided by a laser plasma source in which a Nd:YAG laser beam is focused onto a xenon- cluster target. A condenser system, comprised of multilayer-coated and grazing incidence mirrors, collects the EUV radiation and directs it onto a reflecting reticle. The resulting EUV illumination at the reticle and pupil has been measured and meets requirements for acquisition of first images. Tool setup experiments have been completed using a developmental projection system with (lambda) /14 wavefront error (WFE), while the assembly and alignment of the final projection system with (lambda) /24 WFE progresses in parallel. These experiments included identification of best focus at the central field point and characterization of imaging performance in static imaging mode. A small amount of astigmatism was observed and corrected in situ, as is routinely done in advanced optical lithographic tools. Pitch and roll corrections were made to achieve focus throughout the arc-shaped field of view. Scan parameters were identified by printing dense features with varying amounts of magnification and skew correction. Through-focus scanned imaging results, showing 100 nm isolated and dense features, will be presented. Phase 2 implementation goals for the ETS will also be discussed.
The Engineering Test Stand (ETS) is a developmental lithography tool designed to demonstrate full-field EUV imaging and provide data for commercial-tool development. In the first phase of integration, currently in progress, the ETS is configured using a developmental projection system, while fabrication of an improved projection system proceeds in parallel. The optics in the second projection system have been fabricated to tighter specifications for improved resolution and reduced flare. The projection system is a 4-mirror, 4x-reduction, ring-field design having a numeral aperture of 0.1, which supports 70 nm resolution at a k1 of 0.52. The illuminator produces 13.4 nm radiation from a laser-produced plasma, directs the radiation onto an arc-shaped field of view, and provides an effective fill factor at the pupil plane of 0.7. The ETS is designed for full-field images in step-and-scan mode using vacuum-compatible, magnetically levitated, scanning stages. This paper describes system performance observed during the first phase of integration, including static resist images of 100 nm isolated and dense features.
The primary mirror of the proposed California Extremely Large Telescope is a 30-meter diameter mosaic of hexagonal segments. An initial design calls for about a thousand segments with a hexagon side length of 0.5 meters, a primary-mirror focal ratio of 1.5, and a segment surface quality of about 20 nanometers rms. We describe concepts for fabricating these segments.
Extreme UV (EUV) projection system are designed with mild spheres so that the mirrors can be tested at the center of curvature without null optics. The elimination of the null optics improves the fundamental accuracy of the test. However, this test configuration is not stigmatic, and the rays from the test wavefront and reference wavefront will not trace the same optical path through the viewing system. Effectively, the test and reference wavefront are sheared in the exit pupil of the viewing system. This shear leads to an OPD contribution from the viewing system that we label the mapping error. For visible light metrology, this induced OPD error can be a significant fraction of the EUV wavelength.
EUV lithography (EUVL) is a leading candidate as a stepper technology for fabricating the '0.1 micrometers generation' of microelectronic circuits. EUVL is an optical printing technique qualitatively similar to DUV lithography (DUVL), except that 11-13 nm wavelength light is used instead of 193-248nm. The feasibility of creating 0.1 micrometers features has been well-established using small-field EUVL printing tools, and development efforts are currently underway to demonstrate that cost-effective production equipment can be engineered to perform full-width ring-field imaging consistent with high wafer throughput rates. Ensuring that an industrial supplier base will be available for key components and subsystems is crucial to the success of EUVL. In particular, the projection optics are the heart of the EUVL imaging system, yet they have figure and finish specifications that are beyond the state-of-the-art in optics manufacturing. Thus it is important to demonstrate that industry will be able to fabricate and certify these optics commensurate with EUVL requirements. Indeed, the goal of this paper is to demonstrate that procuring EUVL projection optical substrates is feasible. This conclusion is based on measurements of both commercially-available and developmental substrates. The paper discusses EUVL figure and finish specifications, followed by examples of ultrasmooth and accurate surfaces, and concludes with a discussion of how substrates are measured and evaluated.
The electrostatic comb finger drive has become an integral design for microsensor and microactuator applications. This paper reports on utilizing the levitation effect of comb fingers to design vertical-to-the-substrate actuation for interferometric applications. For typical polysilicon comb drives with 2 micrometers gaps between the stationary and moving fingers, as well as between the microstructures and the substrate, the equilibrium position is nominally 1-2 micrometers above the stationary comb fingers. This distance is ideal for many phase shifting interferometric applications. Theoretical calculations of the vertical actuation characteristics are compared with the experimental result, and a general design guideline is derived from these result. The suspension flexure stiffness, gravity forces, squeeze film damping, and comb finger thicknesses are parameters investigated which affect the displacement curve of the vertical microactuator. By designing a parallel plate capacitor between the suspended mass and the substrate, in situ position sensing can be used to control the vertical movement, providing a total feedback-controlled system. Fundamentals of various capacitive position sensing techniques are discussed. Experimental verification is carried out by a Zygo distance measurement interferometer.
Optical systems for extreme ultraviolet (EUV) lithography require optical elements with wavefront aberrations limited to a fraction of an EUV wavelength to achieve diffraction-limited performance. Achieving wavefront and surface figure metrology at this level of accuracy is one of the key challenges in the development of EUV lithography. We have successfully built and operated a prototype EUV point diffraction interferometer which is capable of performing wavefront measurement of EUV optical elements at their operational wavelength. Initial experiments to characterize the interferometer, and to measure the optical wavefront diffracted from a Fresnel zone plate lens are discussed.
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