In this paper, two matched microstrip line configurations for the excitation of magnetostatic wave resonators have been studied for optimizing the performances of a Magnetostatic Wave (MSW) Straight Edge Resonator (SER). The first transducer was designed for a band-stop and the second one for a band-pass resonator, both suspended on a silicon micromachined membrane obtained by means of wet anisotropic etching. It has been previously observed that the insertion losses of microstrip lines on silicon membrane for band-stop and band-pass MSW SERs are improved with respect to the same microstrip line structures realized on a silicon bulk substrate. For that reason the modelling of the microstrip lines has been optimized in view of their application in SER devices. The Microwave Office program, a powerful tool for the design of microwave planar devices, has been used. The theoretical S-parameters have been obtained and optimized by changing the geometry in the design of the transmission lines.
Two band-stop SERs (resonator A and resonator B) on silicon membrane were obtained and characterized. The frequency tunability domain of these resonators was between 3 GHz and 9.5 GHz ca. obtained by changing the dc magnetic bias field between Happl = 0.02 T and Happl = 0.34 T. The measurements of the S21 parameter demonstrate a suppression of more than 20 dB of the high order modes, showing a good selectivity of this kind of resonator. The rejection ratio was better than -20 dB in the frequency domain from f = 3 GHz to f = 9.5 GHz for the resonator A and better than -20 dB between f = 4.2 GHz and f = 9.5 GHz for the resonator B. These results demonstrate the possibility to obtain microwave band-stop resonators supported on silicon membrane with high isolation and rejection ratios.
A frequency tunable magnetostatic wave (MSW) straight edge resonator (SER) made by a YIG film has been used as a selective frequency component in a micromachined resonating filter. S-parameters have been measured at different DC magnetic bias fields, with a frequency tunability between 2 GHz and 6 GHz ca.. An improvement of the performances for the SERs excited by micromachined microstrip transducers has been clearly demonstrated. Moreover, the utilization of silicon membranes to support MSW-SERs offers important openings toward the integration of magnetostatic wave devices with micromachined structures.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.