This work investigates the novel electrical and magnetic properties exhibited by nanoscale materials. Here we outline some unique nanomaterials synthesis approaches such as nanoparticles catalyzed vapor-liquid-solid synthesis, doped oxide nanowires synthesis, and high temperature synthesis of nanomaterial. We examine magnetic and electrical properties enabled by the nanodimensions. For example, electrical conductivity is significantly enhanced in Te nanostructures compared to its bulk phase when its thickness is reduced to a few nanometers. We investigate the magnetic properties in oxide nanostructures (Ga2O3, ZnO, ITO). These results provide key new insights to understand the electrical and magnetic properties originated in the nanoscale dimensions. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525
We present the fabrication and operation of GaN vacuum nanodiodes that operate in air and exhibit ultra-low turn-on voltage, high field emission current, excellent on-off ratio, and promising reliability and radiation hardness. Experimental and modeling results on the characteristics of these devices at various nanogap sizes, operating pressures, and radiation environments are discussed. Preliminary results on the fabrication and characteristics of lateral GaN nano vacuum transistors will also be shown. These results provide key new insights into the behavior and potential of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.
We discuss the fabrication and operation of GaN nanogap vacuum nanoelectronic diodes that operate in air and exhibit ultra-low turn-on voltage, high field emission current, excellent on-off ratio, and promising reliability and radiation hardness. We present experimental and modeling results on the characteristics of these devices at various nanogap sizes, operating pressures, and radiation environments. Preliminary results on the fabrication and characteristics of lateral GaN nano vacuum transistors will also be presented. These results provide key new insights into the behavior and potential of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.
III-Nitride based photonic crystals or metamaterials can operate in the visible and ultraviolet frequencies and are important for many nanophotonics applications. A key challenge in efficient operation of such III-nitride based optical nanostructures has been in creating a low refractive index interface cladding region between the high refractive index substrate GaN and the active layer due to a lack of compatible natural low index materials unlike those in Si and III-V systems. Here we will discuss achieving such optical substrate isolation in III-nitride nanophotonic devices using electrochemical and photo-electrochemical etching techniques [Opt. Mat. Exp. 2018, 8, 3543]. We will describe the fabrication of a GaN nanowire array utilizing this method of optical isolation and present the optical response to demonstrate the effectiveness of this approach.
Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.
AlGaN is a leading candidate for current and future ultra-wide bandgap electronic and optoelectronic applications. However, 3D etch technologies for AlGaInN remain immature compared to silicon, limiting its full potential for novel devices. Here, we build from the foundation of anisotropic KOH-based wet etchants used to fabricate GaN structures and explore AlGaN alloys etched in acids and bases. We investigate the etch reactivity of AlGaN alloys as a function of Al content in various etchants. We then explore the etch evolution of novel nanostructures observed and discuss possible mechanistic explanations. Lastly, we look at field emission properties of AlGaN alloys.
The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. Here, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.
Solid-state, vacuum nanoelectronic devices have the potential to combine the advantages of vacuum electron devices, such as robustness in harsh environments and high frequency operation, and solid-state devices, such as size, integrability, and low-power operation. In this work, we demonstrate novel GaN nanogap field emission diodes that operate in air and exhibit ultra-low turn-on voltage, high field emission current, and excellent on-off ratio. We present experimental and modeling results on the field emission characteristics of these devices at various nanogap sizes and operating pressures. These results provide critical new insights into the behavior of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.
Solid-state, vacuum nanoelectronic devices have the potential to combine the advantages of vacuum electron devices, such as robustness in harsh environments and high frequency operation, and solid-state devices, such as size, integrability, and low-power operation. In this work, we demonstrate novel GaN nanogap field emission diodes that operate in air and exhibit low turn-on voltage, high field emission current, and excellent on-off ratio. We present experimental and modeling results on the field emission characteristics of these devices at various nanogap sizes and operating pressures. These results provide critical new insights into the behavior of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.
The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.
Ultrafast optical microscopy is an important tool for examining fundamental phenomena in semiconductor nanowires with high temporal and spatial resolution. Here, we used this technique to study carrier dynamics in single GaN/InGaN core−shell nonpolar multiple quantum well nanowires. We find that intraband carrier−carrier scattering is the main channel governing carrier capture, while subsequent carrier relaxation is dominated by three-carrier Auger recombination at higher densities and bimolecular recombina tion at lower densities. The Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.
III-nitride nanowires have attracted increasing interest as potential ultracompact and low-power nanoscale lasers in the UV-visible wavelengths. In order to maximize the potential of nanowire lasers, a greater understanding and control over their properties, including mode control, polarization control, wavelength tuning, and beam shaping, is necessary. Here, we discuss the fabrication of III-nitride based single nanowire and nanowire photonic crystal lasers using a top-down approach, and present multiple methods for controlling their optical properties. The nanowires were fabricated by a two-step process composed of a lithographic dry etch followed by a selective, wet chemical etch of the nanowire sidewalls. This technique allows for high quality nanowires with straight and smooth nonpolar m-plane sidewalls and with controllable height, pitch and diameter. Precisely engineered axial nanowire heterostructures can be formed from planar heterostructures, while radial nanowire heterostructures can be formed via regrowth on the etched nanowires.
This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. Department of Energy, Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-AC04-94AL85000.
Photonic crystals (PC) can fundamentally alter the emission behavior of light sources by suitably modifying the
electromagnetic environment around them. Strong modulation of the photonic density of states especially by full three-dimensional
(3D) bandgap PCs, enables one to completely suppress emission in undesired wavelengths and directions
while enhancing desired emission. This property of 3DPC to control spontaneous emission, opens up new regimes of
light-matter interaction in particular, energy efficient and high brightness visible lighting. Therefore a 3DPC composed
entirely of gallinum nitride (GaN), a key material used in visible light emitting diodes can dramatically impact solid state
lighting. The following work demonstrates an all GaN logpile 3DPC with bandgap in the visible fabricated by a template
directed epitaxial growth.
Although planar heterostructures dominate current optoelectronic architectures, 1D nanowires and nanorods have distinct
and advantageous properties that may enable higher efficiency, longer wavelength, and cheaper devices. We have
developed a top-down approach for fabricating ordered arrays of high quality GaN-based nanorods with controllable
height, pitch and diameter. This approach avoids many of the limitations of bottom-up synthesis methods. In addition to
GaN nanorods, the fabrication and characterization of both axial and radial-type GaN/InGaN nanorod LEDs have been
achieved. The precise control over nanorod geometry achiveable by this technique also enables single-mode single
nanowire lasing with linewidths of less than 0.1 nm and low lasing thresholds of ~250kW/cm2.
Although planar heterostructures dominate current solid-state lighting architectures (SSL), 1D nanowires have distinct
and advantageous properties that may eventually enable higher efficiency, longer wavelength, and cheaper devices.
However, in order to fully realize the potential of nanowire-based SSL, several challenges exist in the areas of controlled
nanowire synthesis, nanowire device integration, and understanding and controlling the nanowire electrical, optical, and
thermal properties. Here recent results are reported regarding the aligned growth of GaN and III-nitride core-shell
nanowires, along with extensive results providing insights into the nanowire properties obtained using cutting-edge
structural, electrical, thermal, and optical nanocharacterization techniques. A new top-down fabrication method for
fabricating periodic arrays of GaN nanorods and subsequent nanorod LED fabrication is also presented.
Nanowires based on the III nitride materials system have attracted attention as potential nanoscale building blocks in
optoelectronics, sensing, and electronics. However, before such applications can be realized, several challenges exist in
the areas of controlled and ordered nanowire synthesis, fabrication of advanced nanowire heterostructures, and
understanding and controlling the nanowire electrical and optical properties. Here, recent work is presented involving
the aligned growth of GaN and III-nitride core-shell nanowires, along with extensive results providing insights into the
nanowire properties obtained using advanced electrical, optical and structural characterization techniques.
The novel properties of semiconductor nanowires, along with their potential for device applications in areas including
nanoscale lasers and thermoelectrics, have led to a resurgence of interest in their growth and characterization over the
past decade. However, the further development and optimization of nanowire-based devices will depend critically on an
understanding of carrier relaxation in these nanostructures. For example, the operation of GaN-based photonic devices is
often influenced by the presence of a large defect state concentration. Ultrafast optical spectroscopy can address this
problem by measuring carrier transfer into and out of these states, which will be important in optimizing device
performance.
In this work, we use ultrafast wavelength-tunable optical spectroscopy to temporally resolve carrier dynamics in
semiconductor nanowires. Wavelength-tunable optical pump-probe measurements enable us to independently measure
electron and hole dynamics in Ge nanowires, revealing that the lifetime of both electrons and holes decreases with
decreasing nanowire diameter. Similar measurements on CdSe nanostructures reveal that the surface-to-volume ratio
strongly influences carrier relaxation. Finally, ultrafast optical experiments on GaN nanowires probe carrier dynamics in
the defect states that influence device operation. These experiments provide fundamental insight into carrier relaxation in
these nanosystems and reveal information critical to optimizing their performance for applications.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.