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Dr. Gérard Ghibaudo
PhD at École Nationale Supérieure d'Electronique et de Ra
SPIE Involvement:
Author
Publications (4)
Proceedings Article | 8 June 2007 Paper
Impact of BOX/substrate interface on low frequency noise in FD-SOI devices
Proceedings Volume 6600, 66000J (2007) https://doi.org/10.1117/12.724671
KEYWORDS: Interfaces, Oxides, Silicon, Doping, Field effect transistors, Dielectrics, Instrument modeling, Silicon carbide, Signal to noise ratio, Transistors
Proceedings Article | 25 May 2004 Paper
Characterization and modeling of low frequency noise in sub-0.1-µm SiGe pMOSFET's
Krunoslav Romanjek, Jan Chroboczeck, Gérard Ghibaudo, Thomas Ernst
Proceedings Volume 5470, (2004) https://doi.org/10.1117/12.546495
KEYWORDS: Silicon, Field effect transistors, Interfaces, Scattering, Oxides, Germanium, Gadolinium, Control systems, Data modeling, Transistors
Proceedings Article | 12 May 2003 Paper
Low-frequency noise and fluctuations in advanced CMOS devices
Proceedings Volume 5113, (2003) https://doi.org/10.1117/12.484913
KEYWORDS: Molybdenum, CMOS technology, Oxides, Field effect transistors, CMOS devices, Silicon, Transistors, Interfaces, Interference (communication), Resistance
Proceedings Article | 22 September 1995 Paper
Linewidth influence on electromigration tests at wafer level on TiN/AlCu/TiN/Ti metal lines
Francois Giroux, H. Roede, C. Gounelle, P. Mortini, Gerard Ghibaudo
Proceedings Volume 2635, (1995) https://doi.org/10.1117/12.221439
KEYWORDS: Diffusion, Ions, Wafer testing, Metals, Resistance, Modulation transfer functions, Reliability, Semiconducting wafers, Image segmentation, Aluminum
Conference Committee Involvement (1)
Noise and Fluctuations in Circuits, Devices, and Materials
21 May 2007 | Florence, Italy
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