Mr. Gisung Yoon Profile

Gisung Yoon

Principal Engineer at Micron Technology Inc

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Publications (8)

Proceedings Article | 23 October 2015 Paper

Improvement in accuracy of defect size measurement by automatic defect classification

Bhamidipati Samir, Mark Pereira, Sankaranarayanan Paninjath, Chan-Uk Jeon, Dong-Hoon Chung, Gi-Sung Yoon, Hong-Yul Jung

Proc. SPIE. 9635, Photomask Technology 2015

KEYWORDS: Optical properties, Image processing, Coating, Inspection, Photomasks, Extreme ultraviolet, Neodymium, Semiconducting wafers, Liquids, Defect inspection

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The blank mask defect review process involves detailed analysis of defects observed across a substrate’s multiple preparation stages, such as cleaning and resist-coating. The detailed knowledge of these defects plays an important role in the eventual yield obtained by using the blank. Defect knowledge predominantly comprises of details such as the number of defects observed, and their accurate sizes. Mask usability assessment at the start of the preparation process, is crudely based on number of defects. Similarly, defect size gives an idea of eventual wafer defect printability. Furthermore, monitoring defect characteristics, specifically size and shape, aids in obtaining process related information such as cleaning or coating process efficiencies.

Blank mask defect review process is largely manual in nature. However, the large number of defects, observed for latest technology nodes with reducing half-pitch sizes; and the associated amount of information, together make the process increasingly inefficient in terms of review time, accuracy and consistency. The usage of additional tools such as CDSEM may be required to further aid the review process resulting in increasing costs.

Calibre® MDPAutoClassify™ provides an automated software alternative, in the form of a powerful analysis tool for fast, accurate, consistent and automatic classification of blank defects. Elaborate post-processing algorithms are applied on defect images generated by inspection machines, to extract and report significant defect information such as defect size, affecting defect printability and mask usability. The algorithm’s capabilities are challenged by the variety and complexity of defects encountered, in terms of defect nature, size, shape and composition; and the optical phenomena occurring around the defect [1].

This paper mainly focuses on the results from the evaluation of Calibre® MDPAutoClassify™ product. The main objective of this evaluation is to assess the capability of accurately estimating the size of the defect from the inspection images automatically. The sensitivity to weak defect signals, filtering out noise to identify the defect signals and locating the defect in the images are key success factors. The performance of the tool is assessed on programmable defect masks and production masks from HVM production flow. Implementation of Calibre® MDPAutoClassify™ is projected to improve the accuracy of defect size as compared to what is reported by inspection machine, which is very critical for production, and the classification of defects will aid in arriving at appropriate dispositions like SEM review, repair and scrap.

Proceedings Article | 8 October 2014 Paper

Study of high sensitivity DUV inspection for sub-20nm devices with complex OPCs

Sang Hoon Han, Hong Yul Jung, Sun Pyo Lee, In-Yong Kang, Gi Sung Yoon, Dong Hoon Chung, Chan-Uk Jeon, Yulia Brand, Yair Eran, Yoad Bar-Shean, Alexander Chereshnya, Chung Ki Lyu

Proc. SPIE. 9235, Photomask Technology 2014

KEYWORDS: Optical lithography, Inspection, Image resolution, Photomasks, Artificial intelligence, Source mask optimization, Optical proximity correction, SRAF, Evolutionary algorithms, Resolution enhancement technologies

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Proceedings Article | 1 October 2013 Paper

Improving inspectability of sub-2x-nm node masks with complex SRAF

In Yong Kang, Gisung Yoon, Jonghee Lee, Donghoon Paul Chung, Byung-Gook Kim, Chan-Uk Jeon, Gregg Inderhees, Trent Hutchinson, Wonil Cho, Jiuk Hur

Proc. SPIE. 8886, 29th European Mask and Lithography Conference

KEYWORDS: Lithography, Calibration, Image processing, Scanners, Inspection, Printing, Photomasks, Source mask optimization, SRAF, Model-based design

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Proceedings Article | 28 June 2013 Paper

Extending DUV mask inspection tool for inspecting 2xnm HP and beyond

Jihoon Na, Sang Hoon Han, Gisung Yoon, Dong Hoon Chung, Byung-Gook Kim, Chanuk Jeon, Dana Bernstein, Lior Shoval, Ido Dolev, Ofer Shopen, Ju Sang Lee, Chung ki Lyu, Seung Ryong Bae

Proc. SPIE. 8701, Photomask and Next-Generation Lithography Mask Technology XX

KEYWORDS: Wafer-level optics, Signal to noise ratio, Defect detection, Deep ultraviolet, Inspection, Optical inspection, Printing, Photomasks, Geometrical optics, Semiconducting wafers

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Proceedings Article | 8 November 2012 Paper

EUV mask inspection study for sub-20nm device

Inkyun Shin, Gisung Yoon, Ji Hoon Na, Paul D. Chung, Chan-Uk Jeon

Proc. SPIE. 8522, Photomask Technology 2012

KEYWORDS: Lithographic illumination, Modulation, Polarization, Inspection, Scanning electron microscopy, Printing, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers

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Proceedings Article | 27 March 2008 Paper

Lifetime of EUVL masks as a function of degree of carbon contamination and capping materials

Sungmin Huh, Hoon Kim, Gisung Yoon, Jaehyuck Choi, Han-Shin Lee, Dong Gun Lee, Byungsup Ahn, Hwan-Seok Seo, Dongwan Kim, Seoung Sue Kim, Han Ku Cho, Takeo Watanabe, Hiroo Kinoshita

Proc. SPIE. 6921, Emerging Lithographic Technologies XII

KEYWORDS: Carbon, Contamination, Silicon, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Ruthenium

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Proceedings Article | 27 March 2007 Paper

Phase-shifted assist feature OPC for sub-45-nm node optical lithography

Gi-Sung Yoon, Hee-Bom Kim, Jeung-Woo Lee, Seong-Woon Choi, Woo-Sung Han

Proc. SPIE. 6520, Optical Microlithography XX

KEYWORDS: Diffraction, Optical lithography, Opacity, Manufacturing, Photomasks, Optical proximity correction, SRAF, Nanoimprint lithography, Critical dimension metrology, Semiconducting wafers

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Proceedings Article | 28 June 2005 Paper

The application of phase grating to CLM technology for the sub-65nm node optical lithography

Gi-Sung Yoon, Sung-Hyuck Kim, Ji-Soong Park, Sun-Young Choi, Chan-Uk Jeon, In-Kyun Shin, Sung-Woon Choi, Woo-Sung Han

Proc. SPIE. 5853, Photomask and Next-Generation Lithography Mask Technology XII

KEYWORDS: Wafer-level optics, Lithography, Optical lithography, Manufacturing, Chromium, Photomasks, Optical proximity correction, Nanoimprint lithography, Semiconducting wafers, Camera shutters

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Showing 5 of 8 publications

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