Dr. Gregory M. Wallraff Profile

Dr. Gregory M. Wallraff

Retired at Sierra View Consulting LLC

SPIE Involvement:

Author

Publications (52)

Proceedings Article | 1 December 2022 Poster + Paper

Controlled sequence peptoids as photoresist platforms for high-resolution DUV/EUV photoresists

X. Zoey Meng, Florian Käfer, Gregory Wallraff, Christopher Ober, Rachel Segalman

Proceedings Volume 12292, 122920Q (2022) https://doi.org/10.1117/12.2642965

KEYWORDS: Polymers, Photoresist materials, Extreme ultraviolet lithography, Photoresist developing, Deep ultraviolet, Switches, Standards development, Polymer thin films

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Proceedings Article | 1 December 2022 Presentation + Paper

Diagnosing phenomena that influence missing contacts and pillars

Andrew Neureuther, Luke Long, Greg Wallraff, Patrick Naulleau

Proceedings Volume 12292, 122920H (2022) https://doi.org/10.1117/12.2643289

KEYWORDS: Diffusion, Stochastic processes, Polymers, Metals, Oxides, Error analysis, Absorption, Extreme ultraviolet lithography, Data modeling, Printing

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SPIE Journal Paper | 2 March 2021 Open Access

Contribution of EUV resist counting statistics to stochastic printing failures

William Hinsberg, Gregory Wallraff, Martha Sanchez, Nimrod Megiddo, Oleg Kostko

JM3, Vol. 20, Issue 01, 014603, (March 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.1.014603

KEYWORDS: Stochastic processes, Printing, Extreme ultraviolet, Extreme ultraviolet lithography, Photoresist materials, Photon counting, Monte Carlo methods, Chemistry, Polymers, Bridges

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Proceedings Article | 26 September 2019 Paper

An analysis of EUV resist stochastic printing failures

M. Sanchez, G. Wallraff, N. Megiddo, W. Hinsberg

Proceedings Volume 11147, 1114717 (2019) https://doi.org/10.1117/12.2537632

KEYWORDS: Stochastic processes, Printing, Extreme ultraviolet, Photoresist materials, Extreme ultraviolet lithography, Polymers, Photoresist processing, Lithography, Polymer thin films, Molecules

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Proceedings Article | 25 March 2019 Presentation

Model reactivity of inorganic and organometallic materials in EUV (Conference Presentation)

Wyatt Thornley, Hoa Truong, Martha Sanchez, Daniel Sanders, Gregory Wallraff, Oleg Kostko, D. Frank Ogletree, Daniel Slaughter

Proceedings Volume 10960, 1096005 (2019) https://doi.org/10.1117/12.2515134

KEYWORDS: Extreme ultraviolet, Metals, Manufacturing, Semiconductor manufacturing, Semiconductors, Resolution enhancement technologies, Photoresist materials, Extreme ultraviolet lithography, Thermal modeling, Photochemistry

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Proceedings Article | 25 March 2019 Presentation

Model studies on the metal salt sensitization of chemically amplified photoresists (Conference Presentation)

Gregory Wallraff, Hoa Truong, Martha Sanchez, Noel Arellno, Alexander Friz, Wyatt Thornley, Oleg Kostko, Dan Slaughter, Frank Ogletree

Proceedings Volume 10960, 1096004 (2019) https://doi.org/10.1117/12.2514610

KEYWORDS: Metals, Photoresist materials, Extreme ultraviolet, Systems modeling, Electrons, Extreme ultraviolet lithography, High volume manufacturing, Semiconductor manufacturing, Semiconductors, Photoresist processing

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Proceedings Article | 16 October 2017 Presentation

A novel route to EUV resists design: Fundamental understanding of chemical processes (Conference Presentation)

Oleg Kostko, Bo Xu, Daniel Slaughter, Musahid Ahmed, D. Frank Ogletree, Kristi Closser, David Prendergast, Patrick Naulleau, Deirdre Olynick, Paul Ashby, Yi Liu, William Hinsberg, Gregory Wallraff

Proceedings Volume 10450, 104500J (2017) https://doi.org/10.1117/12.2281520

KEYWORDS: Electrons, Molecules, Extreme ultraviolet, Photons, Extreme ultraviolet lithography, Photoresist materials

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New resists are needed to advance EUV lithography. Tailored design of efficient photoresist is impossible without fundamental understanding of EUV induced chemistry. Resists incorporating high cross-section elements efficiently utilize EUV photons via radiation absorption by core-level electrons, resulting in emission of primary electrons. However, this is only an initial step in the process. Auger emission, molecular fragmentation, and subsequent electron-resist interactions are also critical. Understanding all these steps is crucial to harness all the deposited energy for improved patterning results. In this work, we present recent results of multimodal experimental approaches to study photoresist materials. To build our grasp of EUV photochemistry from the ground up we aim for understanding the whole variety of processes happening after absorption of an EUV photon by a single building block of resist material – a resist molecule. Model photoresist constituent molecules functionalized with halogen atoms, are isolated in the gas phase and exposed to tunable EUV radiation from the Advanced Light Source, Berkeley Lab and the direct processes are investigated by photoelectron spectroscopy and photoionization mass spectrometry. We quantify the performance of several candidate molecules in terms of photoemission cross-sections and electron yield per primary photoionization event. We demonstrate that some prototype resist molecules can emit several (photo- and Auger) electrons after single EUV photon absorption. Following the electron emission, the atomic relaxation leads to the molecule fragmentation, which also depends on the halogen functionalization. Secondary electron-driven reactions are studied by tunable electron impact ionization and dissociative electron attachment mass spectrometry. We demonstrate that even very low kinetic energy electrons may lead to the molecule dissociation. While gas-phase studies do provide insight into the primary EUV photon or electron induced events in the individual resist molecules, we seek to understand these processes in the condensed phase as this is where industrially relevant processes will occur. We discuss techniques allowing for generation of resist nanoparticles of different morphology, representing either condensed resist or a substrate coated by a resist film. The same techniques, as applied to investigate resist’s building blocks, are used to study the condensed resist material, connecting our understanding of the fundamental phenomena from each isolated molecule to the solid state system.

Proceedings Article | 27 March 2014 Paper

ICE: Ionic contrast enhancement for organic solvent negative tone develop

Linda Sundberg, Gregory Wallraff, Luisa Bozano, Hoa Truong, Martha Sanchez, Dario Goldfarb, Karen Petrillo, William Hinsberg

Proceedings Volume 9051, 90510S (2014) https://doi.org/10.1117/12.2046762

KEYWORDS: Image processing, Ions, Photoresist processing, Semiconducting wafers, Polymers, Lithium, Standards development, Lithography, Image quality standards, Reflectivity

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Proceedings Article | 29 March 2013 Paper

Monitoring the evolution of line edge roughness during resist development using an analog of quenched flow kinetics

M. Sanchez, L. Sundberg, G. Wallraff, W. Hinsberg, L. Bozano, H. Truong, K. Petrillo

Proceedings Volume 8682, 868218 (2013) https://doi.org/10.1117/12.2010966

KEYWORDS: Line edge roughness, Scanning electron microscopy, Analog electronics, Glasses, Extreme ultraviolet, Photoresist processing, Resist chemistry, Photoresist materials, Semiconducting wafers, Photomicroscopy

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Proceedings Article | 16 April 2011 Paper

Bound PAG resists: an EUV and electron beam lithography performance comparison of fluoropolymers

Luisa Bozano, Phillip Brock, Hoa Truong, Martha Sanchez, Gregory Wallraff, William Hinsberg, Robert Allen, Masaki Fujiwara, Kazuhiko Maeda

Proceedings Volume 7972, 797218 (2011) https://doi.org/10.1117/12.884519

KEYWORDS: Extreme ultraviolet, Polymers, Extreme ultraviolet lithography, Electron beam lithography, Lithography, Spectroscopy, Line edge roughness, Image resolution, Glasses, Atomic force microscopy

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Proceedings Article | 16 April 2011 Paper

Visualization of the develop process

Linda Sundberg, Gregory Wallraff, Alexander Friz, Blake Davis, Sally Swanson, Phillip Brock, Charles Rettner, William Hinsberg

Proceedings Volume 7972, 79720I (2011) https://doi.org/10.1117/12.882185

KEYWORDS: Polymers, Semiconducting wafers, Visualization, Video, Critical dimension metrology, Luminescence, Optical tracking, Video processing, Photoresist processing, Interfaces

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Proceedings Article | 25 September 2010 Paper

Two complementary methods to characterize long range proximity effects due to develop loading

Linda Sundberg, Greg Wallraff, Alexander Friz, Blake Davis, Amy Zweber, Robert Lovchik, Emmanuel Delamarche, Tasuku Senna, Toru Komizo, William Hinsberg

Proceedings Volume 7823, 78230G (2010) https://doi.org/10.1117/12.864336

KEYWORDS: Critical dimension metrology, Standards development, Electron beam lithography, Lithography, Semiconducting wafers, Deep ultraviolet, Photomasks, Optical lithography, Photoresist processing, Photography

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Proceedings Article | 30 March 2010 Paper

A method to characterize pattern density effects: chemical flare and develop loading

Linda Sundberg, Gregory Wallraff, Alexander Friz, Amy Zweber, Zdenek Benes, Robert Lovchik, Emmanuel Delamarche, William Hinsberg

Proceedings Volume 7639, 76392S (2010) https://doi.org/10.1117/12.849145

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Liquids, Silicon, Ions, Reactive ion etching, Wafer-level optics, Plasma, Photoresist developing, Optical lithography

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Proceedings Article | 29 March 2006 Paper

The effect of photoresist/topcoat properties on defect formation in immersion lithography

G. Wallraff, C. Larson, G. Breyta, L. Sundberg, D. Miller, D. Gil, K. Petrillo, W. Pierson

Proceedings Volume 6153, 61531M (2006) https://doi.org/10.1117/12.657179

KEYWORDS: Semiconducting wafers, Immersion lithography, Particles, Silicon, Rhodamine, Photoresist materials, Digital watermarking, Video, Image processing, Solids

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Proceedings Article | 23 March 2006 Paper

Investigation of the current resolution limits of advanced extreme ultraviolet (EUV) resists

Patrick Naulleau, Clemens Rammeloo, Jason Cain, Kim Dean, Paul Denham, Kenneth Goldberg, Brian Hoef, Bruno La Fontaine, Adam Pawloski, Carl Larson, Greg Wallraff

Proceedings Volume 6151, 61510Y (2006) https://doi.org/10.1117/12.657005

KEYWORDS: Extreme ultraviolet, Contrast transfer function, Critical dimension metrology, Extreme ultraviolet lithography, Lithography, Printing, Line edge roughness, Fiber optic illuminators, Wavefronts, Interferometry

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Proceedings Article | 4 May 2005 Paper

Studies of acid diffusion in low Ea chemically amplified photoresists

G. Wallraff, D. Medeiros, C. Larson, M. Sanchez, Karen Petrillo, Wu-Song Huang, C. Rettner, B. Davis, Linda Sundberg, William Hinsberg, F. Houle, J. Hoffnagle, Dario Goldfarb, K. Temple, J. Bucchignano

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.601759

KEYWORDS: Diffusion, Absorption, Photoresist materials, Polymers, Humidity, Lithography, Extreme ultraviolet lithography, Image resolution, Infrared imaging, Photoresist processing

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Proceedings Article | 4 May 2005 Paper

Evaluation of functional properties of imaging materials for water immersion lithography

William Hinsberg, J. Hoffnagle, G. Wallraff, C. Larson, F. Houle, Linda Sundberg, Hoa Truong, Blake Davis, Robert Allen

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600560

KEYWORDS: Lithography, Water, Polymers, Liquids, Contamination, Reflectivity, Interferometry, Immersion lithography, Semiconducting wafers, Chemical analysis

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Proceedings Article | 14 May 2004 Paper

Liquid immersion lithography: evaluation of resist issues

William Hinsberg, Gregory Wallraff, Carl Larson, Blake Davis, Vaughn Deline, Simone Raoux, Dolores Miller, Frances Houle, John Hoffnagle, Martha Sanchez, Charles Rettner, Linda Sundberg, David Medeiros, Ralph Dammel, Willard Conley

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.536576

KEYWORDS: Liquids, Polymers, Diffusion, Lithography, Immersion lithography, Polymer thin films, Imaging systems, Neodymium, Semiconducting wafers, Absorption

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Proceedings Article | 14 May 2004 Paper

IBM-JSR 193-nm negative tone resist: polymer design, material properties, and lithographic performance

Kaushal Patel, Margaret Lawson, Pushkara Rao Varanasi, David Medeiros, Gregory Wallraff, Phillip Brock, Richard DiPietro, Yukio Nishimura, Takashi Chiba, Mark Slezak

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.536874

KEYWORDS: Polymers, Etching, Photoresist processing, Lithography, 193nm lithography, Printing, Oxides, Standards development, Resistance, Fluorine

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Proceedings Article | 14 May 2004 Paper

Combinitorial resist processing studies

Carl Larson, Gregory Wallraff

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.538684

KEYWORDS: Semiconducting wafers, Temperature metrology, Photoresist processing, Photoresist materials, Critical dimension metrology, Photomasks, Aluminum, Materials processing, Image processing, Thin films

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Proceedings Article | 14 May 2004 Paper

Optimized acid release underlayers for 157-nm lithography

Carl Larson, Gregory Wallraff, L. Johnson, Phillip Brock, Linda Sundberg

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.538686

KEYWORDS: Absorbance, Polymers, Lithography, Interfaces, Imaging systems, Diffusion, Antireflective coatings, Thin films, Transparency, Extreme ultraviolet

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Proceedings Article | 12 June 2003 Paper

Impact of thin resist processes on post-etch LER

Arpan Mahorowala, Dario Goldfarb, Karen Temple, Karen Petrillo, Dirk Pfeiffer, Katherina Babich, Marie Angelopoulos, Gregg Gallatin, Stacy Rasgon, Herbert Sawin, Scott Allen, Robert Lang, Margaret Lawson, Ranee Kwong, Kuang-Jung Chen, Wenjie Li, Pushkara Varanasi, Martha Sanchez, Hiroshi Ito, Gregory Wallraff, Robert Allen

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485168

KEYWORDS: Etching, Oxides, Scanning electron microscopy, Line edge roughness, Atomic force microscopy, Polymers, Plasma, Plasma etching, Chemistry, Photoresist processing

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Proceedings Article | 12 June 2003 Paper

Extendibility of chemically amplified resists: another brick wall?

William Hinsberg, Frances Houle, Martha Sanchez, John Hoffnagle, Gregory Wallraff, David Medeiros, Gregg Gallatin, Jonathan Cobb

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.487739

KEYWORDS: Lithography, Image resolution, Polymers, Diffusion, Semiconductors, Photoresist processing, Image processing, Chemically amplified resists, Line edge roughness, Molecules

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Proceedings Article | 24 July 2002 Paper

Aliphatic platforms for the design of 157-nm chemically amplified resists

Hiroshi Ito, Hoa Truong, Masaki Okazaki, Dolores Miller, Nicolette Fender, Gregory Breyta, Phillip Brock, Gregory Wallraff, Carl Larson, Robert Allen

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474223

KEYWORDS: Polymers, Lithography, Data modeling, Polymerization, Fluorine, Spectroscopy, Chemically amplified resists, Absorbance, Photomasks, Systems modeling

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Proceedings Article | 24 July 2002 Paper

Effect of humidity on deprotection kinetics in chemically amplified resists

Sean Burns, David Medeiros, Heather Johnson, Gregory Wallraff, William Hinsberg, C. Grant Willson

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474230

KEYWORDS: Humidity, Photoresist materials, Nitrogen, FT-IR spectroscopy, Semiconducting wafers, Chemically amplified resists, Environmental monitoring, Polymers, Switching, Spectroscopy

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Proceedings Article | 24 July 2002 Paper

Characterization and acid diffusion measurements of new strong acid photoacid generators

Gregory Wallraff, Carl Larson, Nicolette Fender, Blake Davis, David Medeiros, Jeff Meute, William Lamanna, Mike Parent, T. Robeledo, Gregory Young

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474215

KEYWORDS: Polymers, Diffusion, Polymer thin films, Semiconducting wafers, Photoresist materials, Silicon, Temperature metrology, Absorbance, Laser phosphor displays, Chemically amplified resists

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Proceedings Article | 24 August 2001 Paper

Silicon-containing resists for 157-nm applications

Ratnam Sooriyakumaran, Debra Fenzel-Alexander, Nicolette Fender, Gregory Wallraff, Robert Allen

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436861

KEYWORDS: Polymers, Silicon, Lithography, Standards development, Polymer thin films, Absorbance, Etching, Semiconductor manufacturing, Resistance, Transparency

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Proceedings Article | 24 August 2001 Paper

Polymer design for 157-nm chemically amplified resists

Hiroshi Ito, Gregory Wallraff, Phillip Brock, Nicolette Fender, Hoa Truong, Gregory Breyta, Dolores Miller, Mark Sherwood, Robert Allen

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436857

KEYWORDS: Polymers, Polymerization, Absorption, Chemically amplified resists, Ultraviolet radiation, Spectroscopy, Lithography, Fluorine, Opacity, Transparency

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Proceedings Article | 24 August 2001 Paper

Characterization of new aromatic polymers for 157-nm photoresist applications

Nicolette Fender, Phillip Brock, W. Chau, S. Bangsaruntip, Arpan Mahorowala, Gregory Wallraff, William Hinsberg, Carl Larson, Hiroshi Ito, Gregory Breyta, Kikue Burnham, Hoa Truong, P. Lawson, Robert Allen

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436873

KEYWORDS: Polymers, Diffusion, Absorbance, Fluorine, Etching, Photoresist materials, Lithography, Silicon, Semiconducting wafers, Transparency

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Proceedings Article | 23 June 2000 Paper

193-nm positive-tone bilayer resist based on norbornene-maleic anhydride copolymers

Ratnam Sooriyakumaran, Debra Fenzel-Alexander, Phillip Brock, Carl Larson, Richard Di Pietro, Gregory Wallraff, Donald Hofer, Dan Dawson, Arpan Mahorowala, Marie Angelopoulos

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388282

KEYWORDS: Polymers, Silicon, Lithography, Etching, Absorbance, Silicon films, Image processing, Photoresist developing, Deep ultraviolet, Oxygen

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Proceedings Article | 23 June 2000 Paper

Effect of resist components on image spreading during postexposure bake of chemically amplified resists

William Hinsberg, Frances Houle, Martha Sanchez, Michael Morrison, Gregory Wallraff, Carl Larson, John Hoffnagle, Phillip Brock, Gregory Breyta

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388294

KEYWORDS: Diffusion, Polymers, Chemistry, Photoresist processing, Image processing, Chemically amplified resists, Temperature metrology, Polymer thin films, Chemical analysis, Lithography

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Proceedings Article | 11 June 1999 Paper

High-resolution 248-nm bilayer resist

Qinghuang Lin, Karen Petrillo, Katherina Babich, Douglas LaTulipe, David Medeiros, Arpan Mahorowala, John Simons, Marie Angelopoulos, Gregory Wallraff, Carl Larson, Debra Fenzel-Alexander, Ratnam Sooriyakumaran, Gregory Breyta, Phillip Brock, Richard Di Pietro, Donald Hofer

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350207

KEYWORDS: Silicon, Etching, Polymers, Reactive ion etching, Lithography, Imaging systems, Resistance, Optical properties, Photomasks, Silicon films

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Proceedings Article | 11 June 1999 Paper

Experimental method for quantifying acid diffusion in chemically amplified resists

Gregory Wallraff, William Hinsberg, Frances Houle, Mons Morrison, Carl Larson, Martha Sanchez, John Hoffnagle, Phillip Brock, Gregory Breyta

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350196

KEYWORDS: Diffusion, Polymers, Polymer thin films, Image processing, Chemistry, Chemically amplified resists, Systems modeling, Quantum efficiency, Semiconducting wafers, 3D image processing

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Proceedings Article | 29 June 1998 Paper

Positive bilayer resists for 248- and 193-nm lithography

Ratnam Sooriyakumaran, Gregory Wallraff, Carl Larson, Debra Fenzel-Alexander, Richard Di Pietro, Juliann Opitz, Donald Hofer, Douglas LaTulip, John Simons, Karen Petrillo, Katherina Babich, Marie Angelopoulos, Qinghuang Lin, Ahmad Katnani

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312411

KEYWORDS: Silicon, Polymers, Lithography, Etching, Plasma etching, Chemistry, Plasma, Deep ultraviolet, Imaging systems, Standards development

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Proceedings Article | 29 June 1998 Paper

Extension of 248-nm optical lithography: a thin film imaging approach

Qinghuang Lin, Ahmad Katnani, Timothy Brunner, Charlotte DeWan, Cindy Fairchok, Douglas LaTulipe, John Simons, Karen Petrillo, Katherina Babich, David Seeger, Marie Angelopoulos, Ratnam Sooriyakumaran, Gregory Wallraff, Donald Hofer

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312417

KEYWORDS: Silicon, Reactive ion etching, Etching, Polymers, Photomasks, Lithography, Thin films, Line edge roughness, Optical lithography, Silicon films

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Proceedings Article | 29 June 1998 Paper

Lithographic characteristics of 193-nm resists imaged at 193 and 248 nm

Juliann Opitz, Robert Allen, Thomas Wallow, Gregory Wallraff, Donald Hofer

Proceedings Volume 3333, (1998) https://doi.org/10.1117/12.312469

KEYWORDS: Lithography, Polymers, Transparency, 193nm lithography, Photoresist materials, Etching, Absorbance, Reactive ion etching, Photoresist developing, Resistance

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Proceedings Article | 7 July 1997 Paper

New ESCAP-type resist with enhanced etch resistance and its application to future DRAM and logic devices

Will Conley, William Brunsvold, Fred Buehrer, Ronald DellaGuardia, David Dobuzinsky, Timothy Farrell, Hok Ho, Ahmad Katnani, Robin Keller, James Marsh, Paul Muller, Ronald Nunes, Hung Ng, James Oberschmidt, Michael Pike, Deborah Ryan, Tina Cotler-Wagner, Ron Schulz, Hiroshi Ito, Donald Hofer, Gregory Breyta, Debra Fenzel-Alexander, Gregory Wallraff, Juliann Opitz, James Thackeray, George Barclay, James Cameron, Tracy Lindsay, Michael Cronin, Matthew Moynihan, Sassan Nour, Jacque Georger, Mike Mori, Peter Hagerty, Roger Sinta, Thomas Zydowsky

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275830

KEYWORDS: Semiconducting wafers, Photoresist materials, Etching, Polymers, Resistance, Lithography, Silicon, Glasses, Annealing, Photoresist processing

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Proceedings Article | 7 July 1997 Paper

Reactivity and kinetic parameters for UVIIHS

Gregory Wallraff, Juliann Opitz, William Hinsberg, Frances Houle, James Thackeray, Theodore Fedynyshyn, Doris Kang, Martha Rajaratnam

Proceedings Volume 3049, (1997) https://doi.org/10.1117/12.275851

KEYWORDS: Systems modeling, Polymers, Chemistry, Stochastic processes, Deep ultraviolet, Catalysis, Contamination, Semiconducting wafers, Chemical analysis, Atmospheric modeling

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Proceedings Article | 14 June 1996 Paper

Protecting groups for 193-nm photoresists

Robert Allen, Ratnam Sooriyakumaran, Juliann Opitz, Gregory Wallraff, Richard Di Pietro, Gregory Breyta, Donald Hofer, Roderick Kunz, Saikumar Jayaraman, Robert Shick, Brian Goodall, Uzodinma Okoroanyanwu, C. Grant Willson

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241832

KEYWORDS: Polymers, Etching, Photoresist materials, Plasma etching, Resistance, Plasma, Photoresist developing, Polymer chemistry, Deep ultraviolet, Temperature metrology

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Proceedings Article | 14 June 1996 Paper

Method of comparing chemical contrast with resist contrast

Gregory Wallraff, Juliann Opitz, Gregory Breyta, Hiroshi Ito, Bruce Fuller

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241814

KEYWORDS: Chemistry, Polymers, Chlorine, Deep ultraviolet, Photoresist processing, Photoresist materials, FT-IR spectroscopy, Chemical reactions, Chemically amplified resists, Semiconducting wafers

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Proceedings Article | 14 June 1996 Paper

Limits to etch resistance for 193-nm single-layer resists

Roderick Kunz, Susan Palmateer, Anthony Forte, Robert Allen, Gregory Wallraff, Richard Di Pietro, Donald Hofer

Proceedings Volume 2724, (1996) https://doi.org/10.1117/12.241835

KEYWORDS: Etching, Polymers, Resistance, Plasma, Chemistry, Metals, Semiconducting wafers, Plasma etching, Deep ultraviolet, Photoresist processing

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