Charging persistent luminescence materials using an infrared laser as a power source and an upconversion process allows expanding the potential applications for these materials. In bioimaging at the nanoscale, it allows increasing recharge ability capacity, as the excitation wavelength is fully inside the biological window. In this work, we propose a novel approach to this phenomenon using energy transfer on associated materials. For this purpose, we have synthesized β- NaGd0.8Y0.17Er0.03F4 nanoparticles, known for their efficient upconversion, and Zn1.33Ga1.335Sn0.33Cr0.005O4 nanoparticles known for their persistent luminescence properties, and we have associated them through a dry impregnation method. The obtained hybrid material presents persistent luminescence after charging with a 980 nm laser. A mechanism is proposed to explain the energy transfer process.
In persistent luminescence materials, energy can be stored by controlled traps/defects under brief irradiation, namely few minutes under various wavelengths ranging from X-rays to natural daylight. This energy is then released at room temperature for several hours via light emission once the excitation is stopped. The paper is focused on the analysis of the persistent luminescence properties on single crystals of Ce3+ and Cr3+ co-doped gadolinium-yttrium-aluminum-gallium garnets of general formula Y3-xGdxAl2Ga3O12 (YGAGG), to promote new applications of the persistent materials. Extending the range of excitation by using X-rays excitation is also proposed.
Persistent luminescence (PersL) property offers great potential for anti-counterfeiting applications, by taking advantage of the possibility of making observations under background-free conditions. However, some challenges still persist, mainly due to the low security when working in the visible range. Thus, to overcome those difficulties, materials with near-infrared (NIR) emissions are highly required. In this work, we propose the use of Zn1.3Ga1.4Sn0.3O4 nanoparticles (ZGSO NPs, with size around 140 nm) doped with Cr3+,Ni2+,Er3+ which have a strong PersL at 700 nm (NIR-I) and at 1300 nm (NIR-II) by optimising the doping ratio of Ni2+ and Er3+ ions. Such ZGSO PersL NPs have been evaluated for multilevel anti-counterfeiting technology in dual-windows.
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