Dr. Guido J. Rademaker Profile

Dr. Guido J. Rademaker

Research engineer at CEA-LETI

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Author

Publications (16)

SPIE Journal Paper | 8 March 2024

Cross-evaluation of critical dimension measurement techniques

Timothée Choisnet, Abdelali Hammouti, Vincent Gagneur, Jérôme Reche, Guido Rademaker, Guillaume Freychet, Guillaume Jullien, Julien Ducoté, Patrice Gergaud, Delphine Le Cunff

JM3, Vol. 23, Issue 01, 014002, (March 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.1.014002

KEYWORDS: Critical dimension metrology, Transmission electron microscopy, Cadmium, X-rays, Synchrotrons, Silicon, Semiconducting wafers, Lithography, Scanning electron microscopy, Chromium

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SPIE Journal Paper | 24 June 2023

Reconstruction of the in-depth profile of line gratings with critical dimension grazing incidence small angle x-ray scattering on laboratory equipment

Guillaume Freychet, Guido Rademaker, Yoann Blancquaert, Patrice Gergaud

JM3, Vol. 22, Issue 03, 031210, (June 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.3.031210

KEYWORDS: X-rays, X-ray sources, Scattering, Grazing incidence, Silicon, Reflection, Laser scattering, Atomic force microscopy, X-ray microscopy, X-ray technology

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Proceedings Article | 27 April 2023 Presentation + Paper

Critical dimension measurement: from synchrotron small angle x-ray scattering to industrial optical scatterometry techniques

Timothée Choisnet, Abdelali Hammouti, Vincent Gagneur, Jérôme Reche, Guido Rademaker, Guillaume Freychet, Guillaume Jullien, Julien Ducote, Patrice Gergaud, Delphine Le Cunff

Proceedings Volume 12496, 124961K (2023) https://doi.org/10.1117/12.2657661

KEYWORDS: Transmission electron microscopy, Synchrotrons, Scanning electron microscopy, Critical dimension metrology, Semiconducting wafers, Cadmium, X-rays, Scattering, Lithography, Silicon

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Proceedings Article | 27 April 2023 Presentation + Paper

Reconstruction of the in-depth profile of line gratings with critical dimension grazing incidence small angle x-ray scattering on a laboratory equipment

Guillaume Freychet, Guido Rademaker, Yoann Blancquaert, Patrice Gergaud

Proceedings Volume 12496, 124961L (2023) https://doi.org/10.1117/12.2657500

KEYWORDS: X-rays, Scattering, X-ray sources, Grazing incidence, Silicon, Reflection, Metrology, Atomic force microscopy, Genetic algorithms, Signal intensity

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Proceedings Article | 1 November 2022 Paper

Contour based on-device overlay metrology assessment using synthetic SEM images

Thibaut Bourguignon, Bertrand Le Gratiet, Jonathan Pradelles, Sébastien Bérard-Bergery, Guido Rademaker, Nicolas Possémé

Proceedings Volume 12472, 124720C (2022) https://doi.org/10.1117/12.2640140

KEYWORDS: Overlay metrology, Scanning electron microscopy, Monte Carlo methods, Metrology, Image processing, Image quality, Semiconducting wafers, Reliability

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The shift of semiconductor industry applications into demanding markets as spatial and automotive led to high quality requirements to guaranty good performances and reliability in harsh environments. As reliability is directly related to a well-controlled process, characterizing the local overlay and its variations inside the chip itself becomes a real asset. While most available in-chip overlay metrologies require dedicated target or dedicated tools, we developed a new method that aims to augment the current SEM tool park into measuring the local overlay directly on the product. In a previous proceeding, this on-device and target-free overlay measurement based on CD-SEM contours has been assessed on SRAM patterns and showed promising results. The work presented here pushes forward this assessment using SEM synthetic images generated from the open-source Nebula simulator of electron-matter interaction. From a layout, a 3D geometry of the measured pattern can be generated, with materials and interfaces carefully defined. Then, a GPU-accelerated Monte-Carlo model simulates in tens of seconds the SEM image. This fast generation of images enables the use of synthetic SEM images in a digital twin system: they can be used to characterize and to challenge the overlay metrology, before applying it to real products. Indeed, a known overlay can be programmed in these images. This way the performances of the measurement algorithm can be assessed with a ground truth reference. Firstly, imaging parameters such as pixel size and noise have been varied in a wide range. This demonstrated a good accuracy and precision inside a defined measurement window with a coefficient of correlation above 0.996 and an offset lower than 0.2nm. In a second part, the influence of the pattern measured has been investigated and experimental results on SRAM could be reproduced using synthetic images. The origin of the loss of sensitivity has been identified and improvements in the contour extractions and used template led to a correlation with a slope of 1.03, an offset of 0.1nm and a Root Mean Square Deviation of 1.36 nm. Finally, the developed digital twin already showed behaviors in the measurement that were hidden in the on-wafer experiments, that helped assessing the method and which will be used in the future to define guidelines for template-based SEM-OVL measurements.

Proceedings Article | 26 May 2022 Presentation + Paper

Multi-branch neural network for hybrid metrology improvement

P. Digraci, M. Besacier, P. Gergaud, G. Rademaker, J. Reche

Proceedings Volume 12053, 120530W (2022) https://doi.org/10.1117/12.2612798

KEYWORDS: Metrology, Neurons, Statistical analysis, Neural networks, Data modeling, Data fusion, Critical dimension metrology, Artificial neural networks

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Proceedings Article | 22 February 2021 Poster + Paper

Data fusion by artificial neural network for hybrid metrology development

L. Penlap Woguia, J. Reche, M. Besacier, P. Gergaud, G. Rademaker

Proceedings Volume 11611, 116112L (2021) https://doi.org/10.1117/12.2583590

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Proceedings Article | 3 April 2020 Paper

Establishing a sidewall image transfer chemo-epitaxial DSA process using 193 nm immersion lithography

G. Rademaker, A. Le Pennec, T. Giammaria, K. Benotmane, H. Pham, C. Bouet, M. G. Gusmao Cacho, M. Argoud, M.-L. Pourteau, A. Paquet, A. Gharbi, C. Navarro, C. Nicolet, X. Chevalier, K. Sakavuyi, P. Nealey, R. Tiron

Proceedings Volume 11326, 113260Z (2020) https://doi.org/10.1117/12.2552003

KEYWORDS: Lithography, Metrology, Directed self assembly, Immersion lithography, Photomasks, Optical lithography, Etching, Critical dimension metrology, Semiconducting wafers

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Proceedings Article | 25 March 2020 Paper

Block copolymer line roughness measurement via PSD: application to fingerprint samples

Aurélie Le Pennec, Jérôme Rêche, Patrick Quéméré, Guido Rademaker, Romain Jarnias, Charlotte Bouet, Célia Nicolet, Christophe Navarro, Maxime Argoud, Raluca Tiron

Proceedings Volume 11326, 113261I (2020) https://doi.org/10.1117/12.2551854

KEYWORDS: Line width roughness, Ultraviolet radiation, Edge detection, Polymethylmethacrylate, Directed self assembly, Binary data, Polymerization, Statistical analysis, Software development

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Proceedings Article | 16 August 2019 Presentation

Performance validation of Mapper’s FLX-1200 (Conference Presentation)

Marco Wieland, Jonathan Pradelles, Stéfan Landis, Laurent Pain, Guido Rademaker, Isabelle Servin, Guido De Boer, Pieter Brandt, Remco J. Jager, Stijn W. H. Steenbrink

Proceedings Volume 10958, 109580I (2019) https://doi.org/10.1117/12.2514920

KEYWORDS: Wafer-level optics, Semiconducting wafers, Critical dimension metrology, Electron beams, Optical alignment, Maskless lithography, Switching, Electron beam lithography, Standards development, Lithography

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Mapper has installed its first product, the FLX–1200, at CEA-Leti in Grenoble (France). This is a maskless lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. The FLX-1200, containing 65,000 parallel electron beams, has a 1 wph throughput at 300 mm wafers and is capable of patterning any resolution and any different type of structure all the way down to 28 nm node patterns. The system has an optical alignment system enabling mix-and-match with optical 193 nm immersion system using standard NVSM marks. Mapper Lithography and CEA-Leti are collaborating to develop turnkey solution for specific applications. In figure 1 the basic operation principle of the Mapper technology is shown. The electron optics have no central crossovers making them intrinsically insensitive to Coulomb forces (electron repulsion). The electron optics are modular and much cheaper than high-NA DUV optics, and can be replaced or upgraded in the field. The wafer exposure happens one column of fields at a time and always in the same direction. There is no need to meander. The focus and leveling is performed during stage fly-back to reduce metrology overhead. Each column of fields is aligned separately, with dedicated alignment targets. Figure 1, Basic operation of the Mapper technology. In figure 2 the way the beams are distributed over the electron optics slit is shown. The writing strategy is as follows: - There are up to 5 slits, staggered in X direction for reasons of wafer coverage. The approach is roughly analogous to an inkjet printer - Each slit area consists of 204 x 13 individual groups of beamlets, organized in a hexagonal array. - All beamlets are simultaneously horizontally deflected over a range of 2µm while the wafer is scanned vertically. - Each group comprises 49 individual beamlets (7x7). Each of the 49 beamlets can independently be switched on and off during exposure. - Each beamlet results in a Gaussian spot on the wafer with 25 nm FW50 diameter (10.6nm 1). - Total beamlet count will therefore equal 5 x 204x13 x 49 = 649,740. In the FLX-1200 and FLX-1300 the central 10% are used (one half slit area): 65,000 A more detailed description of the principles of operation is given in [2]. Figure 2,Distribution of the beams over the electron optics slit. The focus of presentation will be the reporting of the performance achieved of the tool installed at CEA-Leti during endurance runs in full tool configuration. This includes status of: - Exposure throughput - Achieved resolution and CD uniformity - Stitching performance - Matched Machine Overlay - Tool availability and uptime Also the different application areas for such a maskless system are discussed. In figure 3 a preview of a CD uniformity measurement result is shown. On a 300 mm wafer fields of 5mm x 5mm have been exposed containing 60nm dense lines and spaces. The main source of CD variation is caused by differences between the groups of beamlets. To measure this variation we have taken 824 SEM images, each taken of a pattern written by a different beam group. The result is shown in figure 3. The variation is 8nm 3s, and follows a Gaussian distribution of 6nm 3s. Figure 3, Distribution of 824 CD measurements results on 60nm dense lines and spaces

Proceedings Article | 26 March 2019 Paper

Spacer patterning lithography as a new process to induce block copolymer alignment by chemo-epitaxy

A. Paquet, A. Le Pennec, A. Gharbi, T. Giammaria, G. Rademaker, M.-L. Pourteau, D. Mariolle, C. Navarro, C. Nicolet, X. Chevalier, K. Sakavuyi, L. Pain, P. Nealey, R. Tiron

Proceedings Volume 10958, 109580M (2019) https://doi.org/10.1117/12.2514960

KEYWORDS: Etching, Lithography, Optical lithography, Wet etching, HF etching, Critical dimension metrology, Silicon, System on a chip, Tin

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Proceedings Article | 19 September 2018 Paper

Performance validation of Mapper FLX-1200

Jonathan Pradelles, Yoann Blancquaert, Stefan Landis, Laurent Pain, Guido Rademaker, Isabelle Servin, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco Jager, Jerry Peijster, Erwin Slot, Stijn Steenbrink, Marco Wieland

Proceedings Volume 10775, 1077507 (2018) https://doi.org/10.1117/12.2324054

KEYWORDS: Semiconducting wafers, Overlay metrology, Prototyping, Optical scanning, Scanning electron microscopy, Lithography, Line width roughness, Optical alignment, Electron beams, Silicon

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Proceedings Article | 19 September 2018 Paper

Feasibility of monitoring a multiple e-beam tool using scatterometry and machine learning: stitching error detection

Guido Rademaker, Yoann Blancquaert, Thibault Labbaye, Lucie Mourier, Nivea Figueiro, Francisco Sanchez, Roy Koret, Jonathan Pradelles, Stéfan Landis, Stéphane Rey, Ronny Haupt, Barak Bringoltz, Michael Shifrin, Daniel Kandel, Avron Ger, Matthew Sendelbach, Shay Wolfling, Laurent Pain

Proceedings Volume 10775, 1077508 (2018) https://doi.org/10.1117/12.2326595

KEYWORDS: Machine learning, Scatterometry, Semiconducting wafers, Lithography, Metrology, Channel projecting optics, Wafer-level optics, Reflectance spectroscopy, Inverse optics, Electron beam direct write lithography, Maskless lithography

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Multiple electron beam direct write lithography is an emerging technology promising to address new markets, such as truly unique chips for security applications. The tool under consideration, the Mapper FLX-1200, exposes long 2.2 μm-wide zones called stripes by groups of 49 beams. The critical dimensions inside and the registration errors between the stripes, called stitching, are controlled by internal tool metrology. Additionally, there is great need for on-wafer metrology of critical dimension and stitching to monitor Mapper tool performance and validate the internal metrology. Optical Critical Dimension (OCD) metrology is a workhorse technique for various semiconductor manufacturing tools, such as deposition, etching, chemical-mechanical polishing and lithography machines. Previous works have shown the feasibility to measure the critical dimension of non-uniform targets by introducing an effective CD and shown that the non-uniformity can be quantified by a machine learning approach. This paper seeks to extend the previous work and presents a preliminary feasibility study to monitor stitching errors by measuring on a scatterometry tool with multiple optical channels. A wafer with OCD targets that mimic the various lithographic errors typical to the Mapper technology was created by variable shaped beam (VSB) e-beam lithography. The lithography process has been carefully tuned to minimize optically active systematic errors such as critical dimension gradients. The OCD targets contain horizontal and vertical gratings with a pitch of 100 nm and a nominal CD of 50 nm, and contain various stitching error types such as displacement in X, Y and diagonal gratings. Sensitivity to all stitching types has been shown. The DX targets showed non-linearity with respect to error size and typically were a factor of 3 less sensitive than the promising performance of DY targets. A similar performance difference has seen in nominally identical diagonal gratings exposed with vertical and horizontal lines, suggesting that OCD metrology for DX cannot be fully characterized due to lithography errors in gratings with vertical lines.

Proceedings Article | 22 March 2018 Presentation + Paper

Overlay and stitching metrology for massively parallel electron-beam lithography

Guido Rademaker, Jonathan Pradelles, Stéfan Landis, Stephane Rey, Anna Golotsvan, Anat Marchelli, Tal Itzkovich, Tetyana Shapoval, Ronny Haupt, Erwin Slot, Guido de Boer, Dhara Dave, Marco Wieland, Laurent Pain

Proceedings Volume 10585, 105850U (2018) https://doi.org/10.1117/12.2297535

KEYWORDS: Overlay metrology, Metrology, Electron beam lithography, Lenses, Distance measurement, Electron beams, Raster graphics, Semiconducting wafers, Time metrology, Process control

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Proceedings Article | 19 March 2018 Presentation + Paper

Performance validation of Mapper's FLX-1200

Marco Wieland, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco Jager, Jerry Peijster, Erwin Slot, Stijn Steenbrink, Yoann Blancquaert, Stefan Landis, Laurent Pain, Jonathan Pradelles, Guido Rademaker, Isabelle Servin

Proceedings Volume 10584, 105840G (2018) https://doi.org/10.1117/12.2300816

KEYWORDS: Semiconducting wafers, Line width roughness, Optical alignment, Overlay metrology, Electron beams, Electron beam lithography

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Proceedings Article | 27 April 2017 Presentation

Overlay performance assessment of MAPPER's FLX-1200 (Conference Presentation)

Ludovic Lattard, Isabelle Servin, Jonathan Pradelles, Yoann Blancquaert, Guido Rademaker, Laurent Pain, Guido de Boer, Pieter Brandt, Michel Dansberg, Remco J. Jager, Jerry J. Peijster, Erwin Slot, Stijn W. H. Steenbrink, Niels Vergeer, Marco Wieland

Proceedings Volume 10144, 101440N (2017) https://doi.org/10.1117/12.2260878

KEYWORDS: Semiconducting wafers, Lithography, Electron beam lithography, Photomasks, Switching, Electron beams, Lithographic illumination, Integrated optics, Optical alignment, Wafer-level optics

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Mapper Lithography has introduced its first product, the FLX–1200, which is installed at CEA-Leti in Grenoble (France). This is a mask less lithography system, based on massively parallel electron-beam writing with high-speed optical data transport for switching the electron beams. This FLX platform is initially targeted for 1 wph performance for 28 nm technology nodes, but can also be used for less demanding imaging. The electron source currently integrated is capable of scaling to 10 wph at the same resolution performance, which will be implemented by gradually upgrading the illumination optics. The system has an optical alignment system enabling mix-and-match with optical 193 nm immersion systems using standard NVSM marks. The tool at CEA-Leti is in-line with a Sokudo Duo clean track. Mapper Lithography and CEA-Leti are working in collaboration to develop turnkey solution for specific applications. At previous conferences we have presented imaging results including 28nm node resolution, cross wafer CDu of 2.5nm 3 and a throughput of half a wafer per hour, overhead times included. At this conference we will present results regarding the overlay performance of the FLX-1200. In figure 2 an initial result towards measuring the overlay performance of the FLX-1200 is shown. We have exposed a wafer twice without unloading the wafer in between exposures. In the first exposure half of a dense dot array is exposed. In the second exposure the remainder of the dense dot array is exposed. After development the wafer has been inspected using a CD-SEM at 480 locations distributed over an area of 100mm x 100mm. For each SEM image the shift of the pattern written in the first exposure relative to the pattern written in the second exposure is measured. Cross wafer this shift is 7 nm u+3s in X and 5 nm u+3s in Y. The next step is to evaluate the impact of unloading and loading of the wafer in between exposures. At the conference the latest results will be presented.

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