Dr. Gustaf Winroth Profile

Dr. Gustaf Winroth

Research Programme Officer at imec

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Publications (11)

Proceedings Article | 4 April 2014 Paper

193nm immersion lithography for high-performance silicon photonic circuits

Shankar Selvaraja, Gustaf Winroth, Sabrina Locorotondo, Gayle Murdoch, Alexey Milenin, Christie Delvaux, Patrick Ong, Shibnath Pathak, Weiqiang Xie, Gunther Sterckx, Guy Lepage, Dries Van Thourhout, Wim Bogaerts, Joris Van Campenhout, Philippe Absil

Proceedings Volume 9052, 90520F (2014) https://doi.org/10.1117/12.2049004

KEYWORDS: Waveguides, Silicon photonics, Wave propagation, Silicon, Photonics, Optical lithography, Semiconducting wafers, Etching, Immersion lithography, CMOS technology

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Large-scale photonics integration has been proposed for many years to support the ever increasing requirements for long and short distance communications as well as package-to-package interconnects. Amongst the various technology options, silicon photonics has imposed itself as a promising candidate, relying on CMOS fabrication processes. While silicon photonics can share the technology platform developed for advanced CMOS devices it has specific dimension control requirements. Though the device dimensions are in the order of the wavelength of light used, the tolerance allowed can be less than 1% for certain devices. Achieving this is a challenging task which requires advanced patterning techniques along with process control. Another challenge is identifying an overlapping process window for diverse pattern densities and orientations on a single layer. In this paper, we present key technology challenges faced when using optical lithography for silicon photonics and advantages of using the 193nm immersion lithography system. We report successful demonstration of a modified 28nm- STI-like patterning platform for silicon photonics in 300mm Silicon-On-Insulator wafer technology. By careful process design, within-wafer CD variation (1sigma) of <1% is achieved for both isolated (waveguides) and dense (grating) patterns in silicon. In addition to dimensional control, low sidewall roughness is a crucial to achieve low scattering loss in the waveguides. With this platform, optical propagation loss as low as ~0.7 dB/cm is achieved for high-confinement single mode waveguides (450x220nm). This is an improvement of >20 % from the best propagation loss reported for this cross-section fabricated using e-beam lithography. By using a single-mode low-confinement waveguide geometry the loss is further reduced to ~0.12 dB/cm. Secondly, we present improvement in within-device phase error in wavelength selective devices, a critical parameter which is a direct measure of line-width uniformity improvement due to the 193nm immersion system. In addition to these superior device performances, the platform opens scenarios for designing new device concepts using sub-wavelength features. By taking advantage of this, we demonstrate a cost-effective robust single-etch sub-wavelength structure based fiber-chip coupler with a coupling efficiency of 40 % and high-quality (1.1×105) factor wavelength filters. These demonstrations on the 193nm immersion lithography show superior performance both in terms of dimensional uniformity and device functionality compared to 248nm- or standard 193nmbased patterning in high-volume manufacture platform. Furthermore, using the wafer and patterning technology similar to advanced CMOS technology brings silicon photonics closer toward an integrated optical interconnect.

Proceedings Article | 31 March 2014 Paper

Modeling the lithography of ion implantation resists on topography

Gustaf Winroth, Alessandro Vaglio Pret, Monique Ercken, Stewart Robinson, John Biafore

Proceedings Volume 9052, 90520Z (2014) https://doi.org/10.1117/12.2046298

KEYWORDS: Lithography, Optical lithography, Silicon, Ion implantation, Light wave propagation, 3D modeling, Photomasks, Critical dimension metrology, Waveguides

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SPIE Journal Paper | 1 October 2013

Double patterning with dual hard mask for 28-nm node devices and below

Hubert Hody, Vasile Paraschiv, Emma Vecchio, Sabrina Locorotondo, Gustaf Winroth, Raja Athimulam, Werner Boullart

JM3, Vol. 12, Issue 04, 041306, (October 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.041306

KEYWORDS: Etching, Line width roughness, Double patterning technology, Photomasks, Silicon, Amorphous silicon, Plasma, Optical lithography, Chemistry, Critical dimension metrology

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SPIE Journal Paper | 5 September 2013

Precuring implant photoresists for shrink and patterning control

Gustaf Winroth, Erik Rosseel, Christie Delvaux, Efrain Sanchez, Monique Ercken

JM3, Vol. 12, Issue 04, 041303, (September 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.4.041303

KEYWORDS: Photoresist materials, Lithography, Ions, Ion implantation, Critical dimension metrology, Scanning electron microscopy, Annealing, Optical lithography, Etching, Photomasks

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Proceedings Article | 1 April 2013 Paper

Roughness and variability in EUV lithography: Who is to blame? (part 1)

Alessandro Vaglio Pret, Roel Gronheid, Todd Younkin, Gustaf Winroth, John Biafore, Yusuke Anno, Kenji Hoshiko, Vassilios Constantoudis

Proceedings Volume 8679, 86792O (2013) https://doi.org/10.1117/12.2011584

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Scanners, Stochastic processes, Nanoimprint lithography, Lithography, Metrology, Photoresist processing, Computer simulations, Extreme ultraviolet

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Proceedings Article | 29 March 2013 Paper

Precuring implant photoresists for shrink and patterning control

Gustaf Winroth, Erik Rosseel, Christie Delvaux, Efrain Altamirano Sanchez, Monique Ercken

Proceedings Volume 8682, 868207 (2013) https://doi.org/10.1117/12.2011423

KEYWORDS: Ions, Photoresist materials, Lithography, Ion implantation, Critical dimension metrology, Annealing, Scanning electron microscopy, Electron beam lithography, Etching, Polymers

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Polymeric photoresists are readily being used as the stopping layer for ions during implantation processes in manufacturing of integrated circuitry. In order to be compatible for standard optical lithography with deep ultraviolet exposures, the state-of-the-art resists are chemically amplified; as they are for photoresists for etch patterning. Partially deprotected, including patterned, photoresists contain a range of small molecular weight species that are prone to escape the resist if the resist was to be irradiated by additional UV-light, electron beams or ion bombardment. For implant processes in device integration this is becoming progressively the most topical issue for aggressive nodes, where 193 nm compatible resists are progressively turning out to be the new platform for implant lithography. These will shrink significantly during the ion implantation and subsequently produce undesired doping gradients on a length scale comparable to the target feature width. In addition, conventional UV-flood exposure that is common for 248 nm resist platforms is not directly transferrable to 193 nm resists. In this paper, we explore the precuring options available for state-of-the-art implant photoresists for 193 nm lithography, in which we target to reduce the shrinkage during implantation for trench critical dimensions that are relevant for nodes below 20 nm. We present an extensive study comprising of different approaches, including laser-, ion- and electronbased treatments. Each treatment is individually investigated with the aim not only to find a valid pretreatment for shrinkage control during implantation, but also to fundamentally understand what effect alternative pretreatments have on the profile and dimensions of thick photoresists used as implant stopping layers. We find that there are viable options for further process optimization in order to integrate them into device process flows. To this extent, we show the shrink behavior after pretreatment and compare the additional shrink dynamics after implantation.

Proceedings Article | 29 March 2013 Paper

Double patterning with dual hard mask for 28nm node devices and below

Hubert Hody, Vasile Paraschiv, Emma Vecchio, Sabrina Locorotondo, Gustaf Winroth, Raja Athimulam, Werner Boullart

Proceedings Volume 8685, 86850P (2013) https://doi.org/10.1117/12.2010951

KEYWORDS: Etching, Double patterning technology, Photomasks, Silicon, Amorphous silicon, Line width roughness, Plasma, Chemistry, Optical lithography, Critical dimension metrology

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SPIE Journal Paper | 12 July 2012

Critical material properties for pattern collapse mitigation

Gustaf Winroth, Roel Gronheid, Todd Younkin, James Blackwell

JM3, Vol. 11, Issue 3, 033004, (July 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.3.033004

KEYWORDS: Polymers, Lithography, Extreme ultraviolet, Atomic force microscopy, Semiconducting wafers, Scanning electron microscopy, Extreme ultraviolet lithography, Chemistry, Photoresist materials, Scanners

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Proceedings Article | 23 March 2012 Paper

Quantification of shot noise contributions to contact hole local CD nonuniformity

Roel Gronheid, Gustaf Winroth, Alessandro Vaglio Pret, Todd Younkin

Proceedings Volume 8322, 83220M (2012) https://doi.org/10.1117/12.916681

KEYWORDS: Photons, Photomasks, Stochastic processes, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography, Lithography, Critical dimension metrology, Image processing, Polymers

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Proceedings Article | 20 March 2012 Paper

Critical material properties for pattern collapse mitigation

Gustaf Winroth, Todd Younkin, James Blackwell, Roel Gronheid

Proceedings Volume 8325, 83250R (2012) https://doi.org/10.1117/12.916364

KEYWORDS: Polymers, Lithography, Extreme ultraviolet, Semiconducting wafers, Scanning electron microscopy, Atomic force microscopy, Extreme ultraviolet lithography, Chemistry, Chemically amplified resists, Photoresist materials

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Proceedings Article | 7 April 2011 Paper

Understanding EUV resist dissolution characteristics and its impact to RLS limitations

Carlos Fonseca, Brian Head, Hideo Shite, Kathleen Nafus, Roel Gronheid, Gustaf Winroth

Proceedings Volume 7969, 796911 (2011) https://doi.org/10.1117/12.879449

KEYWORDS: Extreme ultraviolet, Lithography, Photoresist processing, Data modeling, Calibration, Polymers, Semiconducting wafers, Extreme ultraviolet lithography, Autoregressive models, Data mining

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Showing 5 of 11 publications

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