Mr. Haitong Tian Profile

Haitong Tian

at Univ of Illinois

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Publications (5)

Proceedings Article | 23 October 2015 Paper

Model-based multiple patterning layout decomposition

Daifeng Guo, Haitong Tian, Yuelin Du, Martin D. Wong

Proceedings Volume 9635, 963522 (2015) https://doi.org/10.1117/12.2197852

KEYWORDS: Model-based design, Lithography, Photomasks, Computer simulations, Optical lithography, Optical simulations, Double patterning technology, Algorithms, Electron beam lithography, Optimization (mathematics)

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As one of the most promising next generation lithography technologies, multiple patterning lithography (MPL) plays an important role in the attempts to keep in pace with 10 nm technology node and beyond. With feature size keeps shrinking, it has become impossible to print dense layouts within one single exposure. As a result, MPL such as double patterning lithography (DPL) and triple patterning lithography (TPL) has been widely adopted. There is a large volume of literature on DPL/TPL layout decomposition, and the current approach is to formulate the problem as a classical graph-coloring problem: Layout features (polygons) are represented by vertices in a graph G and there is an edge between two vertices if and only if the distance between the two corresponding features are less than a minimum distance threshold value d_min. The problem is to color the vertices of G using k colors (k = 2 for DPL, k = 3 for TPL) such that no two vertices connected by an edge are given the same color. This is a rule-based approach, which impose a geometric distance as a minimum constraint to simply decompose polygons within the distance into different masks. It is not desired in practice because this criteria cannot completely capture the behavior of the optics. For example, it lacks of sufficient information such as the optical source characteristics and the effects between the polygons outside the minimum distance. To remedy the deficiency, a model-based layout decomposition approach to make the decomposition criteria base on simulation results was first introduced at SPIE 2013.¹ However, the algorithm¹ is based on simplified assumption on the optical simulation model and therefore its usage on real layouts is limited. Recently AMSL² also proposed a model-based approach to layout decomposition by iteratively simulating the layout, which requires excessive computational resource and may lead to sub-optimal solutions. The approach² also potentially generates too many stiches. In this paper, we propose a model-based MPL layout decomposition method using a pre-simulated library of frequent layout patterns. Instead of using the graph G in the standard graph-coloring formulation, we build an expanded graph H where each vertex represents a group of adjacent features together with a coloring solution. By utilizing the library and running sophisticated graph algorithms on H, our approach can obtain optimal decomposition results efficiently. Our model-based solution can achieve a practical mask design which significantly improves the lithography quality on the wafer compared to the rule based decomposition.

Proceedings Article | 31 March 2014 Paper

Hybrid lithography for triple patterning decomposition and E-beam lithography

Haitong Tian, Hongbo Zhang, Zigang Xiao, Martin D. Wong

Proceedings Volume 9052, 90520P (2014) https://doi.org/10.1117/12.2046499

KEYWORDS: Electron beam lithography, Lithography, Vestigial sideband modulation, Photomasks, Semiconductors, Optical power tracking algorithms, Double patterning technology, Manufacturing, Optical lithography, Immersion lithography

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Proceedings Article | 28 March 2014 Paper

DSA template optimization for contact layer in 1D standard cell design

Zigang Xiao, Yuelin Du, Haitong Tian, Martin D. Wong, He Yi, H.-S. Philip Wong

Proceedings Volume 9049, 904920 (2014) https://doi.org/10.1117/12.2045691

KEYWORDS: Lithography, Optical lithography, Electron beam lithography, Optimization (mathematics), Manufacturing, Lithium, Standards development, Annealing, Baryon acoustic oscillations, Directed self assembly

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At the 7 nm technology node, the contact layers of integrated circuits (IC) are too dense to be printed by single exposure lithography. Block copolymer directed self-assembly (DSA) has shown its advantage in contact/via patterning with high throughput and low cost. To pattern contacts with DSA, guiding templates are usually printed first with conventional lithography, e.g., 193 nm immersion lithography (193i) that has a coarser pitch resolution. Contact holes are then patterned with DSA process. The guiding templates play the role of controlling the DSA patterns inside, which have a finer resolution than the templates. The DSA contact pitch depends on the chemical property of block copolymer and it can be adjusted within a certain range under strong lateral confinement to deviate from the natural pitch. As a result, different patterns can be obtained through different parameters. Although the guiding template shapes can be arbitrary, the overlay accuracy of the contact holes patterned are different and largely depend on the templates. Thus, the guiding templates that have tolerable variations are considered as feasible, and those have large overlays are considered as infeasible. To pattern the contact layer in a layout with DSA technology, we must ensure that all the DSA templates in the layout are feasible. However, the original layout may not be designed in a DSA-friendly way. Moreover, the routing process may introduce contacts that can only be patterned by infeasible templates. In this paper, we propose an optimization algorithm that optimize the contact layer for DSA patterning in 1D standard cell design. In particular, the algorithm modifies the layout via wire permutation technique to redistribute the contacts such that the use of infeasible templates is avoided and the feasible patterns that with better overlay control are favored. The experimental result demonstrate the ability of the proposed algorithm in helping to reduce the design and manufacturing cost of a DSA-enabled process at 7 nm technology node.

Proceedings Article | 10 September 2013 Paper

Color balancing for triple patterning lithography with complex designs

Haitong Tian, Hongbo Zhang, Martin Wong

Proceedings Volume 8880, 88800I (2013) https://doi.org/10.1117/12.2026285

KEYWORDS: Photomasks, Lithography, Legal, Optical lithography, Printing, Evolutionary algorithms, Electron beam lithography, Manufacturing, Standards development, Immersion lithography

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Proceedings Article | 29 March 2013 Paper

Evaluation of cost-driven triple patterning lithography decomposition

Haitong Tian, Hongbo Zhang, Qiang Ma, Martin D. Wong

Proceedings Volume 8684, 868407 (2013) https://doi.org/10.1117/12.2011670

KEYWORDS: Optical lithography, Lithography, Optical power tracking algorithms, Photomasks, Printing, 193nm lithography, Detection and tracking algorithms, Immersion lithography, Process control, Computer programming

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