The final lithography accuracy is determined by what is known as the “on-product” performance, which includes product
wafer-related errors and long-term stability. It is evident that on-product performance improvement is absolutely
imperative now, and will become even more crucial in coming years. In order to meet customers’ future requirements,
we have developed the next-generation lithography system focusing on wafer alignment advancements to improve onproduct
performance.
This newly developed wafer alignment system will help customers achieve their aggressive next-generation
manufacturing accuracy and productivity requirements. In this paper, we describe the details of the new wafer
measurement system and provide supporting performance data.
For future printing based on multiple patterning and directed self-assembly, critical dimension and overlay requirements
become tighter for immersion lithography. Thermal impact of exposure to both the projection lens and reticle expansion
becomes the dominant factor for high volume production. A new procedure to tune the thermal control function is
needed to maintain the tool conditions to obtain high productivity and accuracy. Additionally, new functions of both
hardware and software are used to improve the imaging performance even during exposure with high-dose conditions.
In this paper, we describe the procedure to tune the thermal control parameters which indicate the response of projection
lens aberration and reticle expansion separately. As new functionalities to control the thermal lens aberration, wavefront-based
lens control software and reticle bending hardware are introduced. By applying these functions, thermal focus
control can be improved drastically. Further, the capability of prediction of reticle expansion is discussed, including
experimental data from overlay exposure and aerial image sensor results.
Due to the importance of errors in lithography scanners, masks, and computational lithography in low-k1 lithography,
application software is used to simultaneously reduce them. We have developed “Masters” application software, which is
all-inclusive term of critical dimension uniformity (CDU), optical proximity effect (OPE), overlay (OVL), lens control
(LNS), tool maintenance (MNT) and source optimization for wide process window (SO), for compensation of the issues
on imaging and overlay.
In this paper, we describe the more accurate and comprehensive solution of OPE-Master, LNS-Master and SO-Master
with functions of analysis, prediction and optimization. Since OPE-Master employed a rigorous simulation, a root cause
of error in OPE matching was found out. From the analysis, we had developed an additional knob and evaluated a proof-of-
concept for the improvement. Influence of thermal issues on projection optics is evaluated with a heating prediction,
and an optimization with scanner knobs on an optimized source taken into account mask 3D effect for obtaining usable
process window. Furthermore, we discuss a possibility of correction for reticle expansion by heating comparing
calculation and measurement.
Accurate overlay with high throughput is the key to success in multiple-patterning lithography. To achieve accurate overlay, the imaging system must control and minimize the thermal aberration and distortion. There are several sources of thermal aberration in an immersion lithography system: (1) reticle deformation by reticle heating; (2) air temperature fluctuation near the reticle; (3) thermal aberrations from the projection lens; and (4) immersion water temperature fluctuation. All aberrations and distortion are impacted by these sources and need to be minimized for accurate overlay. In this paper, we introduce our approach and technologies for the control of thermal aberrations.
Double patterning (DP) is widely regarded as the lithography solution for 32 nm half pitch semiconductor manufacturing,
and DP will be the most likely litho technology for the 22 nm node [1]. When using the DP technique, overlay accuracy
and CD control are of critical importance [2]. We previously introduced the NSR-S620D immersion scanner, which
provides 2 nm overlay capabilities. In the case of the latest generation NSR-S621D system, improvements have been
developed for further overlay accuracy enhancement.
In this paper, we will show the overlay accuracy and Mix-and-Match performance of the NSR-S621D. Further, the
marked improvement in product overlay and the overlay result in Spacer DP as a result of enhanced alignment accuracy
will also be shown.
For position measurements of the EPL reticle, a new concept reticle holder is proposed. This holder clamps the same surface during measurement as during exposure in Nikon's EPL tool, the EB Stepper. Thus the holder reproduces the deformation caused by clamping in a metrology tool with that in the EB Stepper. Investigation by simulation is described. Furthermore, an experimental holder based on this concept was manufactured, and the deformation of a 200 mm EPL reticle was measured. The experimental results and simulation results show an advantage of this method.
For electron beam projection lithography system, it is one of the most important issues to stitch desired patterns accurately. We have found a way to stitch the patterns with high accurate critical dimension by a pattern edge deformation that moderates a stitching error by as much as 2.5 times compared with no-deformed edge.
The latest development status of EB Stepper is reported. The experimental data include the latest resist image data exposed by 100keV electron beam, mask error factors and dosage margins at several backscattered electron levels, transmission data of continuous membrane reticles, and recommended structures for alignment marks, etc. The basic studies related to system design are also explained, those are the strategy for the management of reticle deformation and the stitching accuracy in overlaid layers, etc. Through these data, the resolution capability down to 50nm technology node is clearly shown and alignment/stitching capability is also described. The requirement to a continuous membrane reticle is indicated from experimental data.
KEYWORDS: Image sensors, Signal detection, Calibration, Sensors, Signal to noise ratio, Silicon, Monochromatic aberrations, Electron beams, Projection lithography, Electron beam lithography
A direct means of measuring an image blur of electron beam projection lithography (EPL) tools is described. An aerial image sensor used for the image blur measurement was fabricated and evaluated. The signal to noise ratio (SNR) was very high and the signal contrast was 97%. The measured image blur, defined as the distance between 12% and 88% of the beam edge profile, under the optimum condition was 13 nm and the measurement repeatability was 3 nm (e sigma). The measurement error due to the sensor was extremely small, and a quantitative measurement of the image blur can be realized using this technique. The application of this technique to a system calibration is demonstrated. Focus and astigmatism were measured and the optimum settings of focus coils and stigmators were determined with an excellent repeatability. The potential for this technique to provide an automated self-calibration system on the EPL tools is clearly shown.
Nikon is developing an Electron Beam (EB) stepper as one of the next-generation lithography systems for feature sizes of less than 100 nm. As a reticle for the EB stepper using a high power EB (acceleration voltage: 100 kV, current on reticle: 100 (mu) A), a scattering stencil reticle with a grid-grillage structure has been investigated, EB projection experimental column which operates a high power EB was constructed. Some experimental data of scattered electron characteristics using the EB projection experimental column are given as follows: (1) Scattering contrast of 99.9% can be obtained using 100 kV electron beam (membrane thickness; 2 micrometer, aperture half angle onto reticle; 2 mrad). (2) Changes of resist pattern width of 1:1 and 1:2 lines and spaces are around 40% and around 20% respectively due to the proximity effects by backscattered electrons form the silicon substrate. (3) Contrast of EB mark detection for the system calibration, the reticle alignment, and the wafer registration is obtained. Comparing with the values that be obtained by theoretical calculation, some of experimental data gave good agreement.
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