Dr. Hans van der Laan Profile

Dr. Hans van der Laan

at ASML Netherlands BV

SPIE Involvement:

Author

Publications (16)

Proceedings Article | 28 March 2017 Paper

Paper

Reducing the overlay metrology sensitivity to perturbations of the measurement stack

Yue Zhou, DeNeil Park, Karsten Gutjahr, Abhishek Gottipati, Tam Vuong, Sung Yong Bae, Nicholas Stokes, Aiqin Jiang, Po Ya Hsu, Mark O'Mahony, Andrea Donini, Bart Visser, Chris de Ruiter, Grzegorz Grzela, Hans van der Laan, Martin Jak, Pavel Izikson, Stephen Morgan

Proceedings Volume 10145, 101452G (2017) https://doi.org/10.1117/12.2257913

KEYWORDS: Overlay metrology, Metrology, Scatterometry, Environmental sensing, Image processing, Diffraction gratings, Diffraction, Chemical mechanical planarization, Defense and security, Image analysis

Read Abstract +

Proceedings Article | 24 March 2016 Paper

Paper

New approaches in diffraction based optical metrology

M. Ebert, P. Vanoppen, M. Jak, G. v. d. Zouw, H. Cramer, T. Nooitgedagt, H. v. d. Laan

Proceedings Volume 9778, 97782N (2016) https://doi.org/10.1117/12.2219946

KEYWORDS: Control systems, Overlay metrology, Metrology, Optical metrology, Process control, Critical dimension metrology, Diffraction, Signal processing, Image processing, Scatterometry, Opacity, Semiconducting wafers, Lithography, Scanners

Read Abstract +

Proceedings Article | 12 April 2013 Paper

Paper

High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements

Jan Mulkens, Michael Kubis, Paul Hinnen, Roelof de Graaf, Hans van der Laan, Alexander Padiy, Boris Menchtchikov

Proceedings Volume 8683, 86831J (2013) https://doi.org/10.1117/12.2011550

KEYWORDS: Semiconducting wafers, Scanners, Overlay metrology, Metrology, Lithography, Actuators, Calibration, Reticles, Photomasks, Control systems

Read Abstract +

Proceedings Article | 12 April 2013 Paper

Paper

Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing.

Jos Benschop, Andre Engelen, Hugo Cramer, Michael Kubis, Paul Hinnen, Hans van der Laan, Kaustuve Bhattacharyya, Jan Mulkens

Proceedings Volume 8683, 86830P (2013) https://doi.org/10.1117/12.2011507

KEYWORDS: Overlay metrology, Metrology, Scanners, Sensors, Semiconducting wafers, Yield improvement, Signal processing, Scatterometry, Control systems, Wafer manufacturing

Read Abstract +

Proceedings Article | 3 April 2012 Paper

Paper

A scatterometry-based CD uniformity control solution for Spacer Patterning Technology

Jongsu Lee, Chang Moon Lim, Chan-Ho Ryu, Myoungsoo Kim, Hyosang Kang, Hugo Cramer, Noelle Wright, Birgitt Hepp, Liesbeth van Reijnen, Hans van der Laan, Maryana Marun, Peter ten Berge

Proceedings Volume 8324, 83241V (2012) https://doi.org/10.1117/12.917824

KEYWORDS: Critical dimension metrology, Optical lithography, Double patterning technology, Deposition processes, Scatterometry, Semiconducting wafers, Process control, Etching, Metrology, Control systems

Read Abstract +

Proceedings Article | 13 March 2012 Paper

Paper

Driving imaging and overlay performance to the limits with advanced lithography optimization

Jan Mulkens, Jo Finders, Hans van der Laan, Paul Hinnen, Michael Kubis, Marcel Beems

Proceedings Volume 8326, 83261I (2012) https://doi.org/10.1117/12.916480

KEYWORDS: Semiconducting wafers, Scanners, Overlay metrology, Control systems, Metrology, Optical alignment, Reticles, Actuators, Calibration, Optimization (mathematics)

Read Abstract +

Proceedings Article | 23 March 2011 Paper

Paper

Focus drilling for increased process latitude in high-NA immersion lithography

Ivan Lalovic, Jason Lee, Nakgeuon Seong, Nigel Farrar, Michiel Kupers, Hans van der Laan, Tom van der Hoeff, Carsten Kohler

Proceedings Volume 7973, 797328 (2011) https://doi.org/10.1117/12.882391

KEYWORDS: Laser drilling, Lithography, Metrology, Semiconducting wafers, Electroluminescence, Optical lithography, Immersion lithography, Critical dimension metrology, Photomasks, Chromatic aberrations

Read Abstract +

Proceedings Article | 4 December 2008 Paper

Paper

Experimental proximity matching of ArF scanners

Joost Bekaert, L. Van Look, P. De Bisschop, J. Van de Kerkhove, G, Vandenberghe, K. Schreel, J. Menger, G. Schiffelers, E. Knols, H. van der Laan, R. Willekers

Proceedings Volume 7140, 714027 (2008) https://doi.org/10.1117/12.804670

KEYWORDS: Semiconducting wafers, Scanners, Reticles, Critical dimension metrology, Optical proximity correction, Optics manufacturing, Cadmium, Photomasks, Metrology, Electroluminescence

Read Abstract +

Proceedings Article | 26 March 2007 Paper

Paper

Study of iso-dense bias (IDB) sensitivity to laser spectral shape at the 45nm node

Kazuyuki Yoshimochi, Takayuki Uchiyama, Takao Tamura, Thomas Theeuwes, Rudy Peeters, Hans van der Laan, Hans Bakker, Kenji Morisaki, Toshihiro Oga

Proceedings Volume 6520, 652011 (2007) https://doi.org/10.1117/12.711052

KEYWORDS: Critical dimension metrology, Light sources, Optical simulations, Laser stabilization, Optical proximity correction, Logic devices, Optics manufacturing, Laser applications, Composites, Electronics

Read Abstract +

Proceedings Article | 21 June 2006 Paper

Paper

Spot sensor enabled reticle uniformity measurements for 65nm CDU analysis with scatterometry

Maurice Janssen, Koen van Ingen Schenau, Hans van der Laan

Proceedings Volume 6281, 62810F (2006) https://doi.org/10.1117/12.692636

KEYWORDS: Reticles, Semiconducting wafers, Sensors, Scatterometry, Scanning electron microscopy, Metrology, Scatter measurement, Inspection, Pellicles, Time metrology

Read Abstract +

Proceedings Article | 17 May 2005 Paper

Paper

Etch, reticle, and track CD fingerprint corrections with local dose compensation

Hans van der Laan, Rene Carpaij, Jouke Krist, Oscar Noordman, Youri van Dommelen, Jan van Schoot, Frans Blok, Christian van Os, Sander Stegeman, Tom Hoogenboom, Craig Hickman, Erik Byers, Troy Gugel

Proceedings Volume 5755, (2005) https://doi.org/10.1117/12.602129

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Reticles, Etching, Scanners, Manufacturing, Actuators, Feedback control, Data modeling, Feedback loops

Read Abstract +

Proceedings Article | 10 May 2005 Paper

Paper

Scatterometry based 65nm node CDU analysis and prediction using novel reticle measurement technique

Koen van Ingen Schenau, Peter Vanoppen, Hans van der Laan, Ton Kiers, Maurice Janssen

Proceedings Volume 5752, (2005) https://doi.org/10.1117/12.601500

KEYWORDS: Reticles, Critical dimension metrology, Scatterometry, Scanning electron microscopy, Sensors, Semiconducting wafers, Photomasks, Phase shifts, Binary data, Scatter measurement

Read Abstract +

Proceedings Article | 14 September 2001 Paper

Paper

Aerial image measurement methods for fast aberration set-up and illumination pupil verification

Hans van der Laan, Marcel Dierichs, Henk van Greevenbroek, Elaine McCoo, Fred Stoffels, Richard Pongers, Rob Willekers

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435757

KEYWORDS: Monochromatic aberrations, Lithography, Sensors, Scanners, Lithographic illumination, Reticles, Semiconducting wafers, Wavefronts, Spherical lenses, Diffraction

Read Abstract +

Proceedings Article | 14 September 2001 Paper

Paper

Application of the aberration ring test (ARTEMIS) to determine lens quality and predict its lithographic performance

Marco Moers, Hans van der Laan, Mark Zellenrath, Wim de Boeij, Neil Beaudry, Kevin Cummings, Adriaan van Zwol, Arthur Brecht, Rob Willekers

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435676

KEYWORDS: Lithography, Reticles, Monochromatic aberrations, Spherical lenses, Scanning electron microscopy, Scanners, Phase shifts, Deep ultraviolet, Semiconducting wafers, Feature extraction

Read Abstract +

Proceedings Article | 26 July 1999 Paper

Paper

Understanding systematic and random CD variations using predictive modeling techniques

Donis Flagello, Hans van der Laan, Jan van Schoot, Igor Bouchoms, Bernd Geh

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354328

KEYWORDS: Reticles, Semiconducting wafers, Critical dimension metrology, Finite element methods, Monte Carlo methods, Scanners, Systems modeling, Monochromatic aberrations, Lithography, Photoresist materials

Read Abstract +

Proceedings Article | 7 June 1996 Paper

Paper

Focus and exposure dose determination using stepper alignment

Peter Dirksen, Rudy Pellens, Casper Juffermans, Marijan Reuhman-Huisken, Hans van der Laan

Proceedings Volume 2726, (1996) https://doi.org/10.1117/12.240941

KEYWORDS: Optical alignment, Semiconducting wafers, Silicon, Solids, Deep ultraviolet, Imaging systems, Calibration, Refractive index, Lithography, Chromium

Read Abstract +

Showing 5 of 16 publications

SIGN IN TO:

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Advertisement

Advertisement