In this study, we propose the concept of generating transient nonlinearity via nonlinear carrier lifetime variation based on Auger recombination in silicon nanostructures. The nonlinear Auger lifetime variation creates a common crossing point for all pump-probe transient traces at different pump fluences, presenting a fluence-independent property. Furthermore, we observe that sub-linear and super-linear responses exist before and after the crossing point, revealing an unconventional temporal tunability of Auger-induced transient nonlinearity. Leveraging the combination of a laser scanning microscope and pump-probe technique, these temporally transient nonlinear behaviors are applicable to spatial resolution enhancement beyond the diffraction limit.
In this study, we found giant photothermal nonlinearity with ๐2 = 10-1๐๐2/๐๐ in ~100๐๐ silicon nanoblocks, based on Mie-resonance enhanced absorption and efficient temperature increase via thermal insulation. Through a continuouswave pump-probe setup, we demonstrated an ultrasmall high-contrast all-optical switch with 90% modulation depth. Due to the 0.001๐๐3 small geometrical size, thermal dissipation is as fast as nanosecond, leading to modulation speed at GHz, which is much faster than other thermal optic switches. The large and fast all-optical switching could open the possibility toward high-density integrated photonic nanocircuits based entirely on silicon.
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