Mr. Hazem S. Mesilhy Profile

Hazem S. Mesilhy

Researcher

SPIE Involvement:

Author

Area of Expertise:

Lithography , Computational optics , EUV

Profile Summary

Hazem Mesilhy is a PhD student at Fraunhofer IISB in the Computational Lithography and Optics Group. He got his master’s degree in advanced optical technologies from Friedrich-Alexander University Erlangen-Nürnberg. He received his bachelor’s degree from Cairo University—Faculty of Engineering, Electronics and Electrical Communication Department. His research domain involves the simulation of the lithographic process and the optimization of the process parameters using multi-objective optimization techniques.

Publications (18)

SPIE Journal Paper | 8 October 2024 Open Access

Open Access

Resolution enhancement for high-numerical aperture extreme ultraviolet lithography by split pupil exposures: a modeling perspective

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Tim Brunner, Eelco van Setten, Claire van Lare, Mark van de Kerkhof

JM3, Vol. 24, Issue 01, 011002, (October 2024) https://doi.org/10.1117/12.10.1117/1.JMM.24.1.011002

KEYWORDS: Photomasks, Light sources and illumination, Surface plasmons, Semiconducting wafers, Resolution enhancement technologies, Source mask optimization, Nanoimprint lithography, Near field, Diffraction, Lithography

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BackgroundThe lithographic imaging performance of extreme ultraviolet (EUV) lithography is limited by the efficiency of light diffraction and contrast fading caused by 3D mask effects. The dual monopole concept has been proposed by Joern-Holger Franke to mitigate contrast fading for line-space (L/S) patterns.AimWe employ various modeling techniques to investigate the extendibility of dual monopole or split pupil exposures (SPs) to dense arrays of contacts on dark field and light field masks using different mask absorber options.ApproachFirst, a semi-analytic model is introduced to understand the relevant imaging mechanisms of split pupil exposures for L/S patterns. Next, we apply the split pupil exposure to a regular array of contact holes on a dark field mask. A multi-objective optimization approach helps to identify general trends and specific solutions. Analysis of the near fields of the light reflected from the mask for these particular solutions provides further insights into the imaging mechanisms of split pupil exposures and the different behavior of dark field (DF) and light field (LF) masks. Investigations for several mask absorber materials, tonalities, source fillings, and target sizes demonstrate the application of SP to different use-case scenarios.ResultsOur simulations indicate that split pupil exposures benefit 1D (L/S) and 2D (arrays of contacts/pillars) features. The achievable gain compared with a single exposure (SE) depends on tonality, source filling, absorber material, and target size. The application of SP significantly impacts source mask optimization (SMO). SP affects optical proximity correction (OPC) and optimum source shape and may even modify the optimum absorber thickness. The combination of low-n absorbers, SP, and multi-objective SMO enables the identification of the best imaging solutions and pushes low k1 high-numerical aperture (NA) imaging to its ultimate limits.ConclusionsSplit pupil exposures can provide a promising addition to the toolbox of resolution enhancement techniques for low k1 high-NA lithography and unleash the full potential of low-n/low-k absorber materials.

Proceedings Article | 10 April 2024 Presentation + Paper

Presentation + Paper

Exploring the limits of high contrast contact imaging using split pupil exposures in high-NA EUV lithography

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Tim Brunner, Eelco van Setten, Claire van Lare, Mark van de Kerkhof

Proceedings Volume 12953, 1295302 (2024) https://doi.org/10.1117/12.3009996

KEYWORDS: Photomasks, Light sources and illumination, Source mask optimization, Lithography, Near field, Diffraction

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Proceedings Article | 1 December 2022 Paper

Paper

Precise optical constants: determination and impact on metrology, simulation, and development of EUV masks

Qais Saadeh, Hazem Mesilhy, Victor Soltwisch, Andreas Erdmann, Richard Ciesielski, Leonhard Lohr, Anna Andrle, Vicky Philipsen, Devesh Thakare, Christian Laubis, Frank Scholze, Michael Kolbe

Proceedings Volume 12293, 122930Y (2022) https://doi.org/10.1117/12.2643246

KEYWORDS: Extreme ultraviolet, Scatterometry, Photomasks, Refractive index, Scattering, Reflectivity, Metrology, Databases, Oxidation, Multilayers, Extreme ultraviolet lithography, Extreme ultraviolet coatings, Modeling and simulation, Optical constants, Optical metrology

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Proceedings Article | 13 June 2022 Presentation

Presentation

EUV mask absorber induced best focus shifts

Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Claire van Lare, Tim Brunner, Mark van de Kerkhof, Andreas Erdmann

Proceedings Volume PC12051, PC1205108 (2022) https://doi.org/10.1117/12.2614174

KEYWORDS: Extreme ultraviolet, Refractive index, Nanoimprint lithography, High volume manufacturing, Extreme ultraviolet lithography, Diffraction, 3D printing, 3D image processing

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SPIE Journal Paper | 11 May 2022 Open Access

Open Access

Attenuated phase shift masks: a wild card resolution enhancement for extreme ultraviolet lithography?

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky

JM3, Vol. 21, Issue 02, 020901, (May 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.2.020901

KEYWORDS: Photomasks, Extreme ultraviolet, Diffraction, Phase shifts, Refractive index, Extreme ultraviolet lithography, Resolution enhancement technologies, Deep ultraviolet, Reflectivity, Lithography

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Background: The successful introduction of extreme ultraviolet (EUV) lithography to high volume manufacturing has increased the interest to push this technology to its ultimate limits. This will require photoresist materials, which enable a better tradeoff between resolution, linewidth roughness and sensitivity, and the adaptation of optical resolution enhancements that were originally developed for deep ultraviolet (DUV) lithography. Aim: We review published research on attenuated phase shift masks (attPSM) for EUV with special emphasis on modeling and fundamental understanding of the imaging characteristics of alternative absorber materials. The overview on previous work is intended to summarize typical observations and learning on obtained results and to serve as a reference for further research on this important topic. Review approach: The review starts with a summary of related work on attPSM for DUV lithography. It is shown that the understanding and mitigation of mask topography (or mask 3D) effects is key for the analysis and optimization of attPSM for EUV lithography. Observations from several research groups and application of dedicated modeling approaches help to understand the physical mechanisms behind observed lateral image shifts and pitch-dependent shifts of the best focus position. Results: The imaging physics of attPSM for EUV lithography differs significantly from attPSM imaging in DUV lithography. The “double diffraction” of EUV light from the absorber, the reflection characteristics of the multilayer blank, and the guidance of light through the openings in a low-refractive-index (low-n) absorber introduce important effects that need to be considered in the design and use of attPSM in EUV lithography. It is important to use the optical properties (n and k) and the thickness of the absorber as predictive design parameters of attPSM for EUV lithography (instead of phase and reflectivity). The refractive index of the absorber material is important for binary masks as well. The discussion of low-n absorbers includes both “traditional” attPSM for EUV and low reflectivity absorbers, which exploit the guidance of light inside patterned layers. Conclusions: In-depth modeling investigations of attPSM and first experiments suggest that absorbers with a refractive index around 0.9 (low-n materials) can help to push high NA EUV lithography into the low k1 regime. Comprehensive optimization of source and mask is required to exploit the advantages of low-n absorbers. Further enhancements can help to push EUV imaging to its ultimate limit.

Proceedings Article | 12 October 2021 Presentation + Paper

Presentation + Paper

Simulation of polychromatic effects in high NA EUV lithography

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Qais Saadeh, Victor Soltwisch, Simon Bihr, Jörg Zimmermann, Vicky Philipsen

Proceedings Volume 11854, 1185405 (2021) https://doi.org/10.1117/12.2600931

KEYWORDS: Photomasks, Mirrors, Extreme ultraviolet, Diffraction, Reflectivity, Extreme ultraviolet lithography, Lithography, Phase shifts, Imaging systems

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Proceedings Article | 29 September 2021 Presentation

Presentation

Pathfinding the perfect EUV mask: understanding the EUV mask using the hybrid mask model

Hazem M. Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Eelco van Setten, Claire van Lare, Tim Brunner, Mark van de Kerkhof, Andreas Erdmann

Proceedings Volume 11854, 118540U (2021) https://doi.org/10.1117/12.2601243

KEYWORDS: Photomasks, Extreme ultraviolet, Diffraction, Refractive index, Systems modeling, Reflectivity, Phase shifts, Mirrors, Lithographic illumination, Extreme ultraviolet lithography

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We employ the hybrid mask model of the Fraunhofer IISB simulator Dr.LiTHO to investigate the role of the absorber and multilayer for the observed image blur and contrast loss mechanisms. Hybrid mask model decomposes the EUV mask into the absorber and multilayer part. Both parts can be described by real 3D objects or idealized 2D objects. An idealized absorber is specified by the transmission tr and phase of the transmitted light. An idealized multilayer mirror is characterized by a certain reflectivity value, by an angular range or bandwidth (BW) where the light is reflected and by a distance Zeff from the absorber. The diffraction of the incident light by the absorber, the reflection of the diffracted light by the multilayer mirror, and the second diffraction of the reflected light by the absorber are combined by transfer matrices. The obtained superposed diffraction orders provide characteristic diffraction efficiencies and phase values of discrete orders. The presented analysis of the light diffraction from EUV mask and resulting imaging metrics provides several novel insights into the root causes of M3D effects in high NA EUV imaging. The combination of double diffraction by an ideal (thin) absorber and reflection by an ideal (thin) multilayer with a limited reflectivity range (BW <= 15°) explains the peculiarities of the optimum phase of attenuated PSM for EUV. In contrast to phase shift masks for DUV with an optimum phase of 180°, the optimum phase of attenuated phase shift mask for EUV is in the range between 200° and 250°. The optimum value varies with the pitch and a chosen trade-off between large image contrast (normalized image log slope - NILS) and large threshold to size. The real 3D absorber and multilayer contribute to the specific value of the best absorber thickness and phase as well, This finding explains previous observations of this phenomenon. Waveguide effects in real absorbers with low refractive index n are at the basis of the good imaging performance of low n materials. Low n absorber materials exhibit significant sensitivity to illumination direction and feature size. The described double diffraction of light by the absorber introduces characteristic jumps in the optimum bias (and other imaging metrics) versus pitch. The optimized phase/thickness of low n (low k) absorbers can extend the performance of high NA EUV imaging to pitches below 10 nm.

Proceedings Article | 21 September 2021 Presentation + Paper

Presentation + Paper

Simulation study on EUV multilayer polarization effects

L. Bilalaj, H. Mesilhy, A. Erdmann

Proceedings Volume 11875, 118750L (2021) https://doi.org/10.1117/12.2599904

KEYWORDS: Reflectivity, Polarization, Extreme ultraviolet, Polarizers, Nanoimprint lithography, Molybdenum, Silicon, Refractive index, Projection systems, Photomasks

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SPIE Journal Paper | 20 May 2021 Open Access

Open Access

Investigation of waveguide modes in EUV mask absorbers

Hazem M. Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Claire van Lare, Eelco van Setten, Andreas Erdmann

JM3, Vol. 20, Issue 02, 021004, (May 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.2.021004

KEYWORDS: Extreme ultraviolet, Photomasks, Waveguides, Refractive index, Waveguide modes, Diffraction, Wave propagation, Near field, Nanoimprint lithography, Extreme ultraviolet lithography

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SPIE Journal Paper | 3 May 2021

Study of novel EUVL mask absorber candidates

Meiyi Wu, Devesh Thakare, Jean-François de Marneffe, Patrick Jaenen, Laurent Souriau, Karl Opsomer, Jean-Philippe Soulié, Andreas Erdmann, Hazem M. Mesilhy, Philipp Naujok, Markus Foltin, Victor Soltwisch, Qais Saadeh, Vicky Philipsen

JM3, Vol. 20, Issue 02, 021002, (May 2021) https://doi.org/10.1117/12.10.1117/1.JMM.20.2.021002

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Nanoimprint lithography, Etching, Ruthenium, Refractive index, Optical lithography, Semiconducting wafers, Thin films

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Novel mask absorber designs are catching the attention of the EUVL community due to their ability to mitigate mask 3D effects. Material selection is part of such an optimization. We propose several candidates as novel EUV lithography mask absorbers, namely TaTeN, Ru–Ta, and Pt–Mo alloys. The choice of these materials is based on their theoretical performance evaluated by EUV imaging simulation based on their complex refractive index N ( λ ) = n ( λ ) + ik ( λ ) , where the optical constants n and k relate to the phase velocity and the absorption of electromagnetic radiation with a wavelength λ, respectively. The materials are deposited as thin films on Si substrate with an additional Ru layer to mimic the cap of the multilayer mirror on the real mask. The experimental n and k values are determined by analyzing EUV reflectivity data obtained using a 13.5-nm synchrotron EUV radiation. The imaging simulation presented consists of calculating several imaging metrics including non-telecentricity, normalized image log-slope, and threshold-to-size for specific use cases using the novel absorber. It also compares the proposed materials with the reference TaBN absorber. TaTeN shows higher absorption than TaBN and refraction closer to 1, which improves phase matching for a high k absorber. The refractive index of Ru–Ta and Pt–Mo alloys exhibits a large difference from that of air and provides the required phase shift of attenuated phase shift masks. The characterizations of these materials target the requirements of an EUVL mask: durability for mask cleaning, mask lifetime, and etchability for mask patterning. The stability is first tested against several standard mask cleaning solutions by a beaker test for up to 24 h. The samples are also exposed to hydrogen plasma to imitate the working environment in an EUV scanner. Concerning material patterning, chemical reactive ion etch is applied for preliminary tests. A proper etch recipe is found for TaTeN with a good etch rate (about 60 nm / min) and good selectivity to the Ru underlayer (Ru etch is negligible).

Proceedings Article | 22 February 2021 Presentation

Presentation

Investigation of waveguide modes in EUV mask absorbers

Hazem Mesilhy, Peter Evanschitzky, Gerardo Bottiglieri, Claire van Lare, Eelco van Setten, Andreas Erdmann

Proceedings Volume 11609, 116090E (2021) https://doi.org/10.1117/12.2587948

KEYWORDS: Extreme ultraviolet, Photomasks, Waveguides, Refractive index, Waveguide modes, Near field, Nanoimprint lithography, SRAF, Coherence imaging, Binary data

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Proceedings Article | 18 December 2020 Presentation + Paper

Presentation + Paper

Multilayer optimization for high-NA EUV mask3D suppression

Eelco van Setten, Katrina Rook, Hazem Mesilhy, Gerardo Bottiglieri, Frank Timmermans, Meng Lee, Andreas Erdmann, Tim Brunner

Proceedings Volume 11517, 115170Y (2020) https://doi.org/10.1117/12.2574450

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Reflectivity, EUV optics, Ion beams, Manufacturing

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Proceedings Article | 20 October 2020 Presentation + Paper

Presentation + Paper

Mask absorber for next generation EUV lithography

Meiyi Wu, Devesh Thakare, Jean-François de Marneffe, Patrick Jaenen, Laurent Souriau, Karl Opsomer, Jean-Philippe Soulié, Andreas Erdmann, Hazem Mesilhy, Philipp Naujok, Markus Foltin, Victor Soltwisch, Qais Saadeh, Vicky Philipsen

Proceedings Volume 11517, 1151706 (2020) https://doi.org/10.1117/12.2572114

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Etching, Ruthenium, X-rays, Refractive index, Reflectivity, Phase shifts, Mask cleaning

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Novel mask absorber designs are calling attention of the EUVL community due to their ability to mitigate mask 3D effects. Material selection is part of such optimization [1]. In this paper we propose several candidates as novel EUV lithography mask absorbers, namely TaTeN, Ru-Ta and Pt-Mo alloys. The choice of these materials is based on their theoretical performance evaluated by EUV imaging simulation based on their complex refractive index N(λ) = n(λ) +ik(λ), where the optical constants n and k relate to the phase velocity and to the absorption of an electromagnetic radiation with a wavelength λ, respectively. The materials are deposited as thin films on Si substrate with an additional Ru layer to mimic the cap of multilayer mirror (MLM) on the real mask. The experimental n and k values are determined by analyzing EUV reflectivity data obtained using a 13.5 nm synchrotron EUV radiation. The imaging simulation presented in this paper consists of calculation of several imaging metrics like non-telecentricity, normalized image log-slop (NILS), and threshold-to-size for specific use cases using the novel absorber. It also compares the proposed materials to the reference TaBN absorber. TaTeN shows higher absorption than TaBN and refraction closer to 1, which improves phase matching for a high k absorber. The refractive index of Ru-Ta and Pt-Mo alloys exhibits a large difference to that of air and provides the required phased shift of attenuated phase shift masks [2]. The characterizations of these materials target the requirements of an EUVL mask: durability for mask cleaning, mask lifetime and etchablity for mask patterning. The stability is first tested against several standard mask cleaning solutions by beaker test up to 24 hours with the film structure monitored by X-ray reflectivity analysis. The samples are also exposed to hydrogen plasma to imitate the working environment in a EUV scanner. Material integrity is checked with Rutherford backscattering spectroscopy before and after the exposure. Concerning material patterning, chemical reactive ion etch is applied for preliminary tests. A proper etch recipe is found for TaTeN with good etch rate (about 60 nm/min) and good selectivity to Ru underlayer (Ru etch is ignorable).

SPIE Journal Paper | 1 October 2020 Open Access

Open Access

Perspectives and tradeoffs of absorber materials for high NA EUV lithography

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Vicky Philipsen, Frank Timmermans, Markus Bauer

JM3, Vol. 19, Issue 04, 041001, (October 2020) https://doi.org/10.1117/12.10.1117/1.JMM.19.4.041001

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Proceedings Article | 24 March 2020 Presentation

Presentation

Perspectives and tradeoffs of novel absorber materials for high NA EUV lithography (Conference Presentation)

Andreas Erdmann, Hazem Mesilhy, Peter Evanschitzky, Vicky Philipsen, Frank Timmermans, Markus Bauer

Proceedings Volume 11323, 1132309 (2020) https://doi.org/10.1117/12.2550882

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Lithography, Imaging systems, Extreme ultraviolet, Refractive index, Nanoimprint lithography, Reflectivity, Tantalum, Lithographic illumination

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Proceedings Article | 23 March 2020 Presentation + Paper

Presentation + Paper

Pathfinding the perfect EUV mask: the role of the multilayer

H. Mesilhy, P. Evanschitzky, G. Bottiglieri, E. van Setten, T. Fliervoet, A. Erdmann

Proceedings Volume 11323, 1132316 (2020) https://doi.org/10.1117/12.2551870

KEYWORDS: Reflectivity, Multilayers, Photomasks, Extreme ultraviolet, Silicon, Molybdenum, Diffraction, Optimization (mathematics), Lithography, Optical lithography

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SPIE Journal Paper | 11 August 2018 Open Access

Open Access

Attenuated phase shift mask for extreme ultraviolet: can they mitigate three-dimensional mask effects?

Andreas Erdmann, Peter Evanschitzky, Hazem Mesilhy, Vicky Philipsen, Eric Hendrickx, Markus Bauer

JM3, Vol. 18, Issue 01, 011005, (August 2018) https://doi.org/10.1117/12.10.1117/1.JMM.18.1.011005

KEYWORDS: Photomasks, Nanoimprint lithography, Extreme ultraviolet, Phase shifts, Refractive index, Nickel, Ruthenium, Lithography, Reflectivity, Binary data

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Proceedings Article | 19 March 2018 Presentation + Paper

Presentation + Paper

Attenuated PSM for EUV: Can they mitigate 3D mask effects?

Andreas Erdmann, Peter Evanschitzky, Hazem Mesilhy, Vicky Philipsen, Eric Hendrickx, Markus Bauer

Proceedings Volume 10583, 1058312 (2018) https://doi.org/10.1117/12.2299648

KEYWORDS: Photomasks, Refractive index, Nickel, Ruthenium, Phase shifts, Extreme ultraviolet, Lithography, Reflectivity, Thin films

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Showing 5 of 18 publications

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