As the semiconductor chip size continues to decrease, extreme ultra violet lithography (EUVL) is becoming a vital technology to achieve the high resolution patterning required for sub-7 nm node technologies. The patterning resolution of EUVL is highly dependent on the performance of EUV photoresists (PR) which can lead to variations in the patterning process and affects the overall quality of the semiconductor. Although there are several traditional methods to determine a patterning performance of PR, it becomes more challenging as scale tighten. To this end, we develop a new analysis method, named ‘W-curve’, defining EUV PR resolution using ADI SEM images, that visualizes micro-bridge and -break defect cliffs and local CD uniformity at the same time. Using W-curve method, 3 different PR performance at 36 nm-pitch line/space pattern was clearly distinguished. Also, the obtained result was well correlated with time-series trend data and electric test data. Therefore, we believe that W-curve method could provide a new insight for understanding EUV PR performance and improve patterning performance in a facile and versatile manner.
EUV lithography has been one of the key factors that enables the continuation of semiconductor scaling beyond N7. While it is a vital technique for the HVM of the most recent advanced logic and DRAM devices, the EUVL still needs more efforts in order to fully exploit its capability and extend the application. One particular aspect that has been considered as of critical importance is the optical/chemical stochastic effects which may cause L/S, contact pattern defects limiting the efficiency of EUVL. The simplest way to alleviate the stochastic effects is to employ the higher EUV exposure dose; however, this approach is impractical as it obviously leads to even lower productivity. In this work, the alternative chemicals - such as EUV PTD developer and NTD rinse which are specifically prepared to overcome the stochastic effects - are examined to enhance the performance efficiency of EUVL. The focused features that thoroughly explored are EUV dose, local CD uniformity, PR swelling, pattern collapse, and defects. It is found that, with the chemical composition modification of developer and rinse, EUV pattern fidelity can be effectively optimized resulting in extended process window and improved productivity. It is expected that this work would not only facilitate the extension of EUV application but also help understand how EUV resists behave when they are under the influence of ancillaries.
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