Maciej Węgrzecki, Tadeusz Piotrowski, Zbigniew Puzewicz, Jan Bar, Ryszard Czarnota, Rafal Dobrowolski, Andrii Klimov, Jan Kulawik, Helena Kłos, Michał Marchewka, Marek Nieprzecki, Andrzej Panas, Bartłomiej Seredyński, Andrzej Sierakowski, Wojciech Słysz, Beata Synkiewicz, Dariusz Szmigiel, Michał Zaborowski
In this paper a concept of a new bulk structure of p+-υ-n+ silicon photodiodes optimized for the detection of fast-changing radiation at the 1064 nm wavelength is presented. The design and technology for two types of quadrant photodiodes, the 8-segment photodiode and the 32-element linear photodiode array that were developed according to the concept are described.
Electric and photoelectric parameters of the photodiodes mentioned above are presented.
In this paper, the design and technology of two types of 16-element photodiode arrays is described. The arrays were developed by the ITE and are to be used in detection of microdeflection of laser radiation at the Institute of Metrology and Biomedical Engineering in the Faculty of Mechatronics of Warsaw University of Technology.
The electrical and photoelectrical parameters of the arrays are presented.
This paper covers research results on development of the cantilevers beams test structures for interconnects reliability and robustness investigation. Presented results include design, modelling, simulation, optimization and finally fabrication stage performed on 4 inch Si wafers using the ITE microfabrication facility. This paper also covers experimental results from the test structures characterization.
Maciej Węgrzecki, Dariusz Wolski, Jan Bar, Tadeusz Budzyński, Arkadiusz Chłopik, Piotr Grabiec, Helena Kłos, Andrzej Panas, Tadeusz Piotrowski, Wojciech Słysz, Maciej Stolarski, Dariusz Szmigiel, Iwona Węgrzecka, Michał Zaborowski
The paper presents the design, technology and parameters of a new, silicon 64-element linear photodiode array developed at the Institute of Electron Technology (ITE) for the detection of scintillations emitted by CsI scintillators (λ≈550 nm). The arrays are used in a device for examining the content of containers at border crossings under development at the National Centre for Nuclear Research. Two arrays connected with a scintillator block (128 CsI scintillators) form a 128-channel detection module. The array consists of 64 epiplanar photodiode structures (5.1 × 7.2 mm) and a 5.3 mm module. p+-ν-n+ photodiode structures are optimised for the detection of radiation of λ≈ 550 nm wavelength with no voltage applied (photovoltaic mode). The structures are mounted on an epoxy-glass laminate substrate, copper-clad on both sides, on which connections with a common anode and separate cathode leads are located. The photosensitive surface of photodiodes is covered with a special silicone gel, which protects photodiodes against the mechanical impact of scintillators
The paper presents the design, technology and parameters of a new .silicon detector for detection of electrons (below named as beta detector) developed at the Institute of Electron Technology (ITE). The detector will be used for research on transactinide elements at the GSI Helmholtzzentrum für Schwerionenforschung GmbH, Darmstadt (GSI). The detector consists of a monolithic 32-element array with an active area diameter of 90 mm and a thickness of 0.9 mm. The starting material is a high-resistivity ν silicon wafer (5 kΩcm resistivity). 32 planar p+-ν junctions are formed by boron diffusion on the top side of the wafer. On the bottom side, an n+ region, which forms a common cathode, is formed on the entire surface by phosphorus diffusion.
The array is mounted on a special epoxy-glass laminate substrate, copper-clad on both sides. Two model detectors have been fabricated and studied. Very good electrical parameters have been achieved. For the first array, with supply voltage VR = 20 V, the minimum dark current was 8 nA, the maximum dark current 97.1 nA, and the average dark current 25.1 nA. For the second array, it was 11.5 nA, 378.8 nA and 40.0 nA respectively.
The subject of this paper is to describe the novel method of substrates bonding applied in MEMS technology.
This method gives a possibility of carrying out bonding processes in standard devices for wafer bonding. It
can be applied to chemical, high voltage or high temperature sensitive surfaces. It can be used for bonding
substrates with deep etching area with sharp edges and covered with films characterized by low adhesion to the
classical materials exploited for photolithography. The main idea of the method is based on two various polymer
materials usage. The first material enables to define accurate borders of bonding area, whereas the other
guarantees suitable parameters of bonding: firstly the exact adhesion and a stable join and secondly, desirable
electrical or thermal parameters.
The main aim of this paper is to describe the process of assembling the GSF3S detectors of
thoron particles. Its purpose is also to present the ways of adaptation of the assembly
technology of the above mentioned detector to the conditions which allow for the detection of
particles in the area of optical radiation. The main issues illustrated in the report regard the
method of protecting detector parts which are outside the active surface from light which
generates photo-electric current constituting background that alters the signal.
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