The applicability and accuracy of newly developed analytical models for resist process effects are investigated. These models combine a stationary level set formulation with a lumped parameter model. They allow to propagate the 3D photoresist profile given the 3D aerial image distribution. The first model, based on the vertical propagation algorithm (VPM), takes into account the 2D intensity distribution inside the resist, including the absorption. The second model incorporates the scaled defocus algorithm (SCDF), which describes the 3D intensity of the resist, taking into account the defocus values. In this paper we investigate the applicability for any geometry, for process window determination and the accuracy by taking reference to the fully fledged simulator SOLID-C. The suggested methods allow to calculate 3D resist profile in a fast way thereby enabling the prediction of large areas.
KEYWORDS: Monochromatic aberrations, Spherical lenses, Sodium, Interferometry, 3D modeling, Scanners, Deep ultraviolet, Data modeling, Scanning electron microscopy, Optical lithography
The aberration ring test is used to determine the low and high order lens aberrations. The method is based on two key elements: the linear response of ART to aberrations and the use of multiple imaging conditions. Once the model parameters are determined by means of simulations, the Zernike coefficients are solved from a set of linear equations. The Zernike coefficients thus obtained are correlated to interferometric lens data and to line width measurements.
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