Semiconductor scaling is slowing down because of difficulties of device manufacturing below logic 7nm
node generation. Various lithography candidates which include ArF immersion with resolution enhancement
technology (like Inversed Lithography technology), Extreme Ultra Violet lithography and Nano Imprint
lithography are being developed to address the situation. In such advanced lithography, shot counts of mask
patterns are estimated to increase explosively in critical layers, and then it is hoped that multi beam mask
writer (MBMW) is released to handle them within realistic write time. However, ArF immersion technology
with multiple patterning will continue to be a mainstream lithography solution for most of the layers. Then,
the shot counts in less critical layers are estimated to be stable because of the limitation of resolution in ArF
immersion technology. Therefore, single beam mask writer (SBMW) can play an important role for mask
production still, relative to MBMW. Also the demand of SBMW seems actually strong for the logic 7nm
node. To realize this, we have developed a new SBMW, EBM-9500 for mask fabrication in this generation. A
newly introduced electron beam source enables higher current density of 1200A/cm2. Heating effect
correction function has also been newly introduced to satisfy the requirements for both pattern accuracy and
throughput. In this paper, we will report the configuration and performance of EBM-9500.
Optical lithography is facing resolution limit. To overcome this issue, highly complicated patterns with high data volume
are being adopted for optical mask fabrications. With this background, new electron beam mask writing system, EBM-
7000 is developed to satisfy requirements of hp 32nm generation. Electron optical system with low aberrations is
developed to resolve finer patterns like 30nm L/S. In addition, high current density of 200 A/cm2 is realized to avoid
writing time increase. In data path, distributed processing system is newly built to handle large amounts of data
efficiently. The data processing speed of 500MB/s, fast enough to process all the necessary data within exposure time in
parallel for hp32nm generation, is achieved. And this also makes it possible to handle such large volume dense data as
2G shots/mm2 local pattern density.
In this paper, system configuration of EBM-7000 with accuracy data obtained are presented.