Hiroshi Fujioka received the B.S. degree in industrial chemistry from the University of Tokyo, Japan, in 1984. He received the M.S. and Ph.D. degrees in materials science and mineral engineering from University of California, Berkeley, in 1993 and 1995 respectively. His Ph.D. dissertation dealt with molecular beam epitaxial (MBE) growth and application of low temperature GaAs.
He had been working for Fujitsu Limited as a semiconductor engineer from 1984. In 1996, he joined the University of Tokyo and he has been a professor of Institute of Industrial Science from 2004. His research interests are in the areas of PLD and sputtering growth of III-V semiconductors and their heterostructures for high-speed electronic and optoelectronic devices. His current research projects include sputtering growth of InGaN for large area optical and electron devices.
Professor Fujioka has authored or co-authored over 200 journal papers. Dr. Fujioka is a member of Japanese Society of Applied Physics and the Chemical Society of Japan. He has been serving as a president of Japanese Association of Crystal Growth from 2022. He has been also serving as a chairman of the Japan Society for the Promotion of Science R032 committee from 2021.