To control the HAR (High Aspect Ratio) processes for producing 3D memories, a non-destructive and highly accurate measurement method is required. We report simulation results of T-SAXS (Transmission Small Angle X-ray Scattering) measurability analysis to evaluate its measurement capability of profile parameters for typical HAR structures. After that, we discuss T-SAXS extensibility for profile measurements of future 3D memories, based on measurability analysis for various HAR structural models by varying their structural parameters. For the deep depth region which is important for the future 3D memory shape measurement, we confirmed that the HAR structure with its depth = 30 μm can be measured under the assumed criteria of precision < 1%.
We have developed a new photomask inspection method which has capability for inspecting 65nm technology node reticles using 257nm wavelength light source. This new method meets the requirement for the current mask inspection system using KrF inspection light source to be employed even in the fabrication of photomasks for 65nm technology node by the appearance of immersion technology using ArF wavelength. This paper discusses the detection capability of the 257nm wavelength inspection system for the defects on the 6% ArF attenuated phase shifting masks for 65nm node, using DSM based test pattern mask.
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