Dr. Hoa D. Truong Profile

Dr. Hoa D. Truong

Lithography Engineer at IBM Research - Almaden

SPIE Involvement:

Author

Publications (37)

Proceedings Article | 25 March 2019 Presentation

Model reactivity of inorganic and organometallic materials in EUV (Conference Presentation)

Wyatt Thornley, Hoa Truong, Martha Sanchez, Daniel Sanders, Gregory Wallraff, Oleg Kostko, D. Frank Ogletree, Daniel Slaughter

Proceedings Volume 10960, 1096005 (2019) https://doi.org/10.1117/12.2515134

KEYWORDS: Extreme ultraviolet, Metals, Manufacturing, Semiconductor manufacturing, Semiconductors, Resolution enhancement technologies, Photoresist materials, Extreme ultraviolet lithography, Thermal modeling, Photochemistry

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Proceedings Article | 25 March 2019 Presentation

Model studies on the metal salt sensitization of chemically amplified photoresists (Conference Presentation)

Gregory Wallraff, Hoa Truong, Martha Sanchez, Noel Arellno, Alexander Friz, Wyatt Thornley, Oleg Kostko, Dan Slaughter, Frank Ogletree

Proceedings Volume 10960, 1096004 (2019) https://doi.org/10.1117/12.2514610

KEYWORDS: Metals, Photoresist materials, Extreme ultraviolet, Systems modeling, Electrons, Extreme ultraviolet lithography, High volume manufacturing, Semiconductor manufacturing, Semiconductors, Photoresist processing

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SPIE Journal Paper | 28 August 2017

Ultrathin extreme ultraviolet patterning stack using polymer brush as an adhesion promotion layer

Indira Seshadri, Anuja De Silva, Luciana Meli, Chi-Chun Charlie Liu, Cheng Chi, Jing Guo, Hoa Truong, Kristin Schmidt, John Arnold, Nelson Felix, Lovejeet Singh, Tsuyoshi Furukawa, Ramakrishnan Ayothi, Angelique Raley, Richard Farrell

JM3, Vol. 16, Issue 03, 033506, (August 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.3.033506

KEYWORDS: Oxides, Polymers, Extreme ultraviolet, Optical lithography, Head-mounted displays, Etching, Atomic layer deposition, Chemistry, Plasma enhanced chemical vapor deposition, Printing

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SPIE Journal Paper | 23 May 2017

Development of TiO₂ containing hardmasks through plasma-enhanced atomic layer deposition

Anuja De Silva, Indira Seshadri, Kisup Chung, Abraham Arceo, Luciana Meli, Brock Mendoza, Yasir Sulehria, Yiping Yao, Madhana Sunder, Hoa Truong, Shravan Matham, Ruqiang Bao, Heng Wu, Nelson Felix, Sivananda Kanakasabapathy

JM3, Vol. 16, Issue 02, 023504, (May 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.2.023504

KEYWORDS: Titanium dioxide, Metals, Atomic layer deposition, Optical lithography, Etching, Dry etching, Contamination, Modulation, Wet etching, Lithography

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Proceedings Article | 27 March 2017 Paper

DSA patterning options for logics and memory applications

Chi-Chun Liu, Elliott Franke, Yann Mignot, Scott LeFevre, Stuart Sieg, Cheng Chi, Luciana Meli, Doni Parnell, Kristin Schmidt, Martha Sanchez, Lovejeet Singh, Tsuyoshi Furukawa, Indira Seshadri, Ekmini Anuja De Silva, Hsinyu Tsai, Kafai Lai, Hoa Truong, Richard Farrell, Robert Bruce, Mark Somervell, Daniel Sanders, Nelson Felix, John Arnold, David Hetzer, Akiteru Ko, Andrew Metz, Matthew Colburn, Daniel Corliss

Proceedings Volume 10146, 1014603 (2017) https://doi.org/10.1117/12.2260479

KEYWORDS: Directed self assembly, Plasma etching, Optical lithography, Etching, Logic, Lithography, Manufacturing, Nanofabrication, Silicon, Metals, Extreme ultraviolet, Line edge roughness, Optical alignment, Critical dimension metrology

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Proceedings Article | 24 March 2017 Presentation + Paper

Ultrathin EUV patterning stack using polymer brush as an adhesion promotion layer

Indira Seshadri, Anuja De Silva, Luciana Meli, Charlie Liu, Cheng Chi, Jing Guo, Kristin Schmidt, Hoa Truang, John Arnold, Nelson Felix, Lovejeet Singh, Tsuyoshi Furukawa, Ramakrishnan Ayothi, Angelique Raley, Richard Farrell

Proceedings Volume 10143, 101431D (2017) https://doi.org/10.1117/12.2258565

KEYWORDS: Extreme ultraviolet, Optical lithography, Polymers, Etching, Extreme ultraviolet lithography, Photoresist materials, Lithography, Photoresist processing, Back end of line, Oxides, Head-mounted displays, Atomic layer deposition, Chemistry

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Proceedings Article | 22 March 2016 Paper

DSA patterning options for FinFET formation at 7nm node

Chi-Chun Liu, Elliott Franke, Fee Li Lie, Stuart Sieg, Hsinyu Tsai, Kafai Lai, Hoa Truong, Richard Farrell, Mark Somervell, Daniel Sanders, Nelson Felix, Michael Guillorn, Sean Burns, David Hetzer, Akiteru Ko, John Arnold, Matthew Colburn

Proceedings Volume 9777, 97770R (2016) https://doi.org/10.1117/12.2219670

KEYWORDS: Directed self assembly, Optical lithography, Lithography, Line edge roughness, Etching, Silicon, Image processing, Neodymium, Polymethylmethacrylate

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Proceedings Article | 19 March 2015 Paper

Customization and design of directed self-assembly using hybrid prepatterns

Joy Cheng, Gregory Doerk, Charles Rettner, Gurpreet Singh, Melia Tjio, Hoa Truong, Noel Arellano, Srinivasan Balakrishnan, Markus Brink, Hsinyu Tsai, Chi-Chun Liu, Michael Guillorn, Daniel Sanders

Proceedings Volume 9423, 942307 (2015) https://doi.org/10.1117/12.2086973

KEYWORDS: Picosecond phenomena, Polymethylmethacrylate, System on a chip, Scanning electron microscopy, Image segmentation, Photomasks, Etching, Electron beam lithography, Composites, Directed self assembly

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Proceedings Article | 27 March 2014 Paper

ICE: Ionic contrast enhancement for organic solvent negative tone develop

Linda Sundberg, Gregory Wallraff, Luisa Bozano, Hoa Truong, Martha Sanchez, Dario Goldfarb, Karen Petrillo, William Hinsberg

Proceedings Volume 9051, 90510S (2014) https://doi.org/10.1117/12.2046762

KEYWORDS: Image processing, Ions, Photoresist processing, Semiconducting wafers, Polymers, Lithium, Standards development, Lithography, Image quality standards, Reflectivity

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Proceedings Article | 29 March 2013 Paper

Monitoring the evolution of line edge roughness during resist development using an analog of quenched flow kinetics

M. Sanchez, L. Sundberg, G. Wallraff, W. Hinsberg, L. Bozano, H. Truong, K. Petrillo

Proceedings Volume 8682, 868218 (2013) https://doi.org/10.1117/12.2010966

KEYWORDS: Line edge roughness, Scanning electron microscopy, Analog electronics, Glasses, Extreme ultraviolet, Photoresist processing, Resist chemistry, Photoresist materials, Semiconducting wafers, Photomicroscopy

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Proceedings Article | 23 March 2012 Paper

EUV mask line edge roughness

Amy Zweber, Emily Gallagher, Martha Sanchez, Tasuku Senna, Yoshiyuki Negishi, Toshio Konishi, Anne McGuire, Luisa Bozano, Phil Brock, Hoa Truong

Proceedings Volume 8322, 83220O (2012) https://doi.org/10.1117/12.916291

KEYWORDS: Line edge roughness, Photomasks, Extreme ultraviolet, Scanning electron microscopy, Semiconducting wafers, Edge detection, Image filtering, EUV optics, Pixel resolution, Line width roughness

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Proceedings Article | 16 April 2011 Paper

Bound PAG resists: an EUV and electron beam lithography performance comparison of fluoropolymers

Luisa Bozano, Phillip Brock, Hoa Truong, Martha Sanchez, Gregory Wallraff, William Hinsberg, Robert Allen, Masaki Fujiwara, Kazuhiko Maeda

Proceedings Volume 7972, 797218 (2011) https://doi.org/10.1117/12.884519

KEYWORDS: Extreme ultraviolet, Polymers, Extreme ultraviolet lithography, Electron beam lithography, Lithography, Spectroscopy, Line edge roughness, Image resolution, Glasses, Atomic force microscopy

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Proceedings Article | 2 April 2011 Paper

Self-assembly patterning for sub-15nm half-pitch: a transition from lab to fab

Chris Bencher, Jeffrey Smith, Liyan Miao, Cathy Cai, Yongmei Chen, Joy Cheng, Daniel Sanders, Melia Tjio, Hoa Truong, Steven Holmes, William Hinsberg

Proceedings Volume 7970, 79700F (2011) https://doi.org/10.1117/12.881293

KEYWORDS: Semiconducting wafers, Optical lithography, Etching, Polymers, Lithography, Semiconductors, Inspection, Chemical vapor deposition, Silicon, Directed self assembly

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Proceedings Article | 26 March 2010 Paper

A silicon-containing resist for immersion lithography

Ratnam Sooriyakumaran, Wu-Song Huang, Sally Swanson, Hoa Truong, Phillip Brock, Alexander Friz, Kuang-Jung Chen, Robert Allen

Proceedings Volume 7639, 76390F (2010) https://doi.org/10.1117/12.846280

KEYWORDS: Silicon, Polymers, Immersion lithography, Etching, Lithography, Photoresist materials, Reactive ion etching, Anisotropic etching, Silicon films, Multilayers

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Proceedings Article | 1 April 2009 Paper

Quantitative measurement of resist outgassing during exposure

Nicolae Maxim, Frances Houle, Jeroen Huijbregtse, Vaughn Deline, Hoa Truong, Willem van Schaik

Proceedings Volume 7273, 72733Z (2009) https://doi.org/10.1117/12.813726

KEYWORDS: Silicon, Polymers, Nitrogen, Carbon, Semiconducting wafers, Calibration, Ultraviolet radiation, Sensors, Lithography, Photoresist materials

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Determination of both the identity and quantity of species desorbing from photoresists during exposure at any wavelength - 248nm, 193nm and EUV - has proved to be very challenging, adding considerable uncertainty to the evaluation of risks posed by specific photoresists to exposure tool optics. Measurements using a variety of techniques for gas detection and solid film analysis have been reported but analytical results have not in general been easy to compare or even in apparent agreement, in part due to difficulties in establishing absolute calibrations. In this work we describe two measurement methods that can be used for any exposure wavelength, and show that they provide self-consistent quantitative outgassing data for 2 all-organic and 2 Si-containing 193 nm resists. The first method, based upon gas collection, uses two primary chromatographic techniques. Organic products containing C, S and Si are determined by collection of vapors emitted during exposure in a cold trap and analysis by Gas Chromatography-Flame Ionization Detector-Pulsed Flame Photometric Detector-Mass Spectrometry (GC-FID-PFPD-MS). Inorganic products such as SO2 are identified by adsorbent bed with analysis by Gas Particle-Ion Chromatography (GP-IC). The calibration procedure used provides reasonable accuracy without exhaustive effort. The second method analyzes the elemental concentrations in resist films before and after exposure by secondary ion mass spectrometry technique (SIMS), which requires only knowledge of the resist compositions to be quantitative. The extent of outgassing of C and S determined by the two methods is in good agreement for all 4 resists, especially when taking their fundamentally different characters into account. Overall, the gas collection techniques yielded systematically lower outgassing numbers than did SIMS, and the origins of the spread in values, which likely bracket the true values, as well as detection limits will be discussed. The data for Si were found to differ significantly, however, and we show that the discrepancy is due to photo-induced reactions at the polymer surface with the gas atmosphere present above the resist during exposure. For example, photolytic oxidation of the C-Si bonds in air causes volatile Si-containing products to be formed from an otherwise stable polymer, showing it is important to take the gas environment during exposure into account when designing resist polymers for low Si outgassing.

Proceedings Article | 15 April 2008 Paper

A new class of low bake resists for 193-nm immersion lithography

Ratnam Sooriyakumaran, Richard DiPietro, Hoa Truong, Phillip Brock, Robert Allen, Luisa Bozano, Irene Popova, Wu-Song Huang, Rex Chen, Mahmoud Khojasteh, Pushkara Rao Varanasi

Proceedings Volume 6923, 69230C (2008) https://doi.org/10.1117/12.772947

KEYWORDS: Polymers, Immersion lithography, Diffusion, Image processing, 193nm lithography, Lithography, Chemically amplified resists, Humidity, Photoresist processing, Standards development

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Proceedings Article | 15 April 2008 Paper

Lactones in 193 nm resists: What do they do?

Hiroshi Ito, Hoa Truong, Phil Brock

Proceedings Volume 6923, 692318 (2008) https://doi.org/10.1117/12.772919

KEYWORDS: Polymers, Infrared spectroscopy, Temperature metrology, Crystals, Resistance, Spectroscopy, Infrared radiation, Semiconducting wafers, Quartz, Monochromatic aberrations

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Lactones are almost ubiquitously employed in 193 nm resists to increase the polarity of hydrophobic alicyclic polymers. What else do lactones do in 193 nm resists? We studied the behavior of methacrylate (MA) resists consisting of different protecting groups, hexafluoroalcohols, and norbornane lactone methacrylate (NLM, 2-oxo-3-oxatricyclo[4.2.1.04,8]nonan-5-yl methacrylate). When the protecting group is large [ethylcyclooctyl (ECO) and methyladamantyl (MAd)], thinning of the resist film that occurs in highly exposed areas upon postexposure bake (PEB) is significantly smaller than what is expected from the polymer composition. When the concentration of isopropylhexafluoroalcohol methacrylate (iPrHFAMA) is increased in the ECOMA-NLM polymer, the thinning increases and reaches 100% of theory and the ECOMA-norbornenehexafluoroalcohol methacrylate (NBHFAMA) resist loses quantitative thickness in highly-exposed areas upon PEB at 90 °C. This indicates that small lactones which are more basic than esters can trap deprotection fragments especially when the protecting group is large. Such entrapment was detected by IR spectroscopy and also observed at temperatures as high as 200 °C in thermogravimetric analysis (TGA). Incorporation of lactone appears to decrease the bake temperature sensitivity and the sensitivity of the resist perhaps due to trapping of photochemically generated acids by basic lactone. The lactone ring can be hydrolyzed during aqueous base development but does not seem to affect the dissolution rate, indicating that hydrolysis occurs in aqueous base solution after dissolution. Poly(methacrylic acid-NLM) dissolves as fast as poly(methacrylic acid) in 0.26 N tetramethylammonium hydroxide (TMAH) aqueous solution. While exposed P(ECOMA₄₇-NLM₅₃) resist dissolves in 0.26 N developer at about the same rate as authentically prepared poly(methacrylic acid₄₇-NLM₅₃), the dissolution rate of highly-exposed P(MAdMA₄₄-NLM₅₆) resist is much slower, indicating that the deprotection fragment from the former does not interfere with the development but that from the latter does. When the NLM concentration is increased to 75 %, highly exposed P(ECOMA-NLM) resist dissolves slowly at ca. 600 A/sec and swells significantly, indicating that NLM can be a dissolution inhibitor and swelling enhancer when its concentration is high. Low activation energy protecting groups such as ethylcyclooctyl allows imaging at temperatures as low as 60 °C. However, the temperature dependence of the dose to clear is very large and the chemical contrast is quite small in the low temperature range. Thus, for PEB temperature stability and contrast enhancement, baking 20-30 °C above the lowest practical temperature is recommended.

Proceedings Article | 4 April 2008 Paper

Self-segregating materials for immersion lithography

Daniel Sanders, Linda Sundberg, Phillip Brock, Hiroshi Ito, Hoa Truong, Robert Allen, Gregory McIntyre, Dario Goldfarb

Proceedings Volume 6923, 692309 (2008) https://doi.org/10.1117/12.772937

KEYWORDS: Polymers, Water, Immersion lithography, Photoresist materials, Lithography, Natural surfaces, Interfaces, Semiconducting wafers, Optical properties, Fluorine

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Proceedings Article | 26 March 2008 Paper

The limitations of high-index resists for 193-nm hyper-NA lithography

Gregory McIntyre, Daniel Sanders, Ratnam Sooriyakumaran, Hoa Truong, Robert Allen

Proceedings Volume 6923, 692304 (2008) https://doi.org/10.1117/12.773114

KEYWORDS: Absorption, Refractive index, Water, Lithography, Polarization, Refraction, Chemistry, Critical dimension metrology, Sodium, Reflection

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Proceedings Article | 14 March 2008 Paper

Chemical and mechanical properties of UV-cured nanoimprint resists and release layer interactions

Frances Houle, Ann Fornof, Dolores Miller, Simone Raoux, Hoa Truong, Eva Simonyi, Christopher Jahnes, Stephen Rossnagel

Proceedings Volume 6921, 69210B (2008) https://doi.org/10.1117/12.772591

KEYWORDS: Metals, Oxides, Interfaces, Photoresist processing, Adhesives, Silicon, Quartz, Atomic layer deposition, Ultraviolet radiation, Polymers

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Proceedings Article | 2 April 2007 Paper

Fluoro-alcohol materials with tailored interfacial properties for immersion lithography

Daniel Sanders, Linda Sundberg, Ratnam Sooriyakumaran, Phillip Brock, Richard DiPietro, Hoa Truong, Dolores Miller, Margaret Lawson, Robert Allen

Proceedings Volume 6519, 651904 (2007) https://doi.org/10.1117/12.712768

KEYWORDS: Fluorine, Polymers, Immersion lithography, Lithography, Interfaces, Semiconducting wafers, Carbon, Water, Surface properties, Hydrogen

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Proceedings Article | 22 March 2007 Paper

Impact of curing kinetics and materials properties on imprint characteristics of resists for UV nano-imprint lithography

Frances Houle, Ann Fornof, Ratnam Sooriyakumaran, Hoa Truong, Dolores Miller, Martha Sanchez, Blake Davis, Teddie Magbitang, Robert Allen, Mark Hart, Geraud Dubois

Proceedings Volume 6519, 65191C (2007) https://doi.org/10.1117/12.712298

KEYWORDS: Ultraviolet radiation, Fluorine, Polymers, Glasses, Silicon, Polymerization, Data conversion, Scanning electron microscopy, Dielectrics, Materials processing

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Proceedings Article | 29 March 2006 Paper

Direct determination of photoresist composition changes during UV exposure

Frances Houle, Vaughn Deline, Hoa Truong, Ratnam Sooriyakumaran

Proceedings Volume 6153, 61530Z (2006) https://doi.org/10.1117/12.655687

KEYWORDS: Silicon, Ions, Polymers, Mass spectrometry, Photoresist materials, Spectroscopy, Semiconducting wafers, Ultraviolet radiation, Silicon carbide, Sputter deposition

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Proceedings Article | 4 May 2005 Paper

Molecular resists based on polyhedral oligomeric silsesquioxanes (POSS)

Ratnam Sooriyakumaran, Hoa Truong, Linda Sundberg, Mark Morris, Bill Hinsberg, Hiroshi Ito, Robert Allen, Wu-Song Huang, Dario Goldfarb, Sean Burns, Dirk Pfeiffer

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600615

KEYWORDS: Silicon, Line edge roughness, Polymers, Glasses, Standards development, Diffusion, Lithography, Spectroscopy, Macromolecules, Chemically amplified resists

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Proceedings Article | 4 May 2005 Paper

Silsesquioxane-based 193 nm bilayer resists: characterization and lithographic evaluation

Hiroshi Ito, Hoa Truong, Sean Burns, Dirk Pfeiffer, Wu-Song Huang, Mahmoud Khojasteh, P. Rao Varanasi, Mike Lercel

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598847

KEYWORDS: Polymers, Silicon, Etching, Lithography, Monochromatic aberrations, Resistance, FT-IR spectroscopy, Quartz, Crystals, Spectroscopy

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Polysilsesquioxane-based 193 nm positive bilayer resists are described. In this design Si for etch resistance is placed in every repeat unit and acid-labile protected and acidic groups (and polar units) are in the side chain, allowing to incorporate each lithographically critical functionality in sufficient quantity. Fluoroalcohol is employed as an acid group instead of carboxylic acid because of its more attractive dissolution properties. Polymers were carefully analyzed by ¹⁹F, ¹³C, and ²⁹Si NMR to determine composition and to quantify residual acetyl, silanol, and Q/T. Hydrogen-bonding between tertiary ester and fluoroalcohol in the polysilsesquioxanes was investigated by FT-IR and the effect of lactone incorporation on the thermal deprotection temperature elucidated. In order to better understand the dissolution behavior of exposed resist films, the silsesquioxane resist polymers were partially (ca. 30%) and fully deprotected in solution with acid and their dissolution kinetics investigated by using a quartz crystal microbalance (QCM). It has been found that the exposed areas of the silsesquioxane resists can have a very fast dissolution rate (R_max) of >20,000 A/sec (or even >100,000 A/sec). Heating the fully deprotected model polymers to 150°C did not reduce the dissolution rate much, suggesting thermal condensation of silanol end groups is insignificant. Model deprotected polymers containing triphenylsulfonium nonaflate were exposed to 254 nm radiation, baked, and subjected to QCM measurements in order to determine whether or not acid-catalyzed silanol condensation would reduce the dissolution rate. A combination of high dose and high temperature bake resulted in significant reduction of the dissolution rate in the silsesquioxane polymer containing a small trifluoroalcohol. However, the dissolution behavior of the polymer bearing a bulky norbornene hexafluoroalcohol was unaffected by exposure and bake. Chemical and development contrast curves were generated by using a temperature gradient plate and bake temperature effects investigated. While a postapply bake temperature variation from 95 to 130°C did not affect the contrast (chemical and development) and sensitivity, a postexposure bake temperature effect was quite small. The process window of the silsesquioxane bilayer resists was comparable to that of a high performance commercial 193 nm single layer resist for both isolated and nested contact hole imaging, Superior performance of our silsesquioxane resist was demonstrated in patterned etch in comparison with a COMA-based bilayer resist.

Proceedings Article | 4 May 2005 Paper

Evaluation of functional properties of imaging materials for water immersion lithography

William Hinsberg, J. Hoffnagle, G. Wallraff, C. Larson, F. Houle, Linda Sundberg, Hoa Truong, Blake Davis, Robert Allen

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600560

KEYWORDS: Lithography, Water, Polymers, Liquids, Contamination, Reflectivity, Interferometry, Immersion lithography, Semiconducting wafers, Chemical analysis

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Proceedings Article | 12 June 2003 Paper

Rational design in cyclic olefin resists for sub-100-nm lithography

Wenjie Li, Pushkara Varanasi, Margaret Lawson, Ranee Kwong, Kuang-Jung Chen, Hiroshi Ito, Hoa Truong, Robert Allen, Masafumi Yamamoto, Eiichi Kobayashi, Mark Slezak

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485100

KEYWORDS: Polymers, Etching, Lithography, Resistance, Fluorine, Surface roughness, Dry etching, Semiconducting wafers, 193nm lithography, Polymer thin films

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Proceedings Article | 24 July 2002 Paper

Aliphatic platforms for the design of 157-nm chemically amplified resists

Hiroshi Ito, Hoa Truong, Masaki Okazaki, Dolores Miller, Nicolette Fender, Gregory Breyta, Phillip Brock, Gregory Wallraff, Carl Larson, Robert Allen

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474223

KEYWORDS: Polymers, Lithography, Data modeling, Polymerization, Fluorine, Spectroscopy, Chemically amplified resists, Absorbance, Photomasks, Systems modeling

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Proceedings Article | 24 July 2002 Paper

Evolution of a 193-nm bilayer resist for manufacturing

Ranee Kwong, Mahmoud Khojasteh, Margaret Lawson, Timothy Hughes, Pushkara Varanasi, William Brunsvold, Robert Allen, Phillip Brock, Ratnam Sooriyakumaran, Hoa Truong, Arpan Mahorowala, David Medeiros

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474239

KEYWORDS: Silicon, Etching, Polymers, Lithography, Reactive ion etching, 193nm lithography, Photomasks, Manufacturing, Absorbance, Resistance

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Proceedings Article | 24 August 2001 Paper

Characterization of new aromatic polymers for 157-nm photoresist applications

Nicolette Fender, Phillip Brock, W. Chau, S. Bangsaruntip, Arpan Mahorowala, Gregory Wallraff, William Hinsberg, Carl Larson, Hiroshi Ito, Gregory Breyta, Kikue Burnham, Hoa Truong, P. Lawson, Robert Allen

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436873

KEYWORDS: Polymers, Diffusion, Absorbance, Fluorine, Etching, Photoresist materials, Lithography, Silicon, Semiconducting wafers, Transparency

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Proceedings Article | 24 August 2001 Paper

193-nm single-layer resist materials: total consideration of design, physical properties, and lithographic performances on all major alicyclic platform chemistries

Toru Kajita, Yukio Nishimura, Masafumi Yamamoto, Hiroyuki Ishii, A. Soyano, A. Kataoka, Mark Slezak, Makoto Shimizu, Pushkara Varanasi, G. Jordahamo, Margaret Lawson, R. Chen, William Brunsvold, Wenjie Li, Robert Allen, Hiroshi Ito, Hoa Truong, Thomas Wallow

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436833

KEYWORDS: Etching, Monochromatic aberrations, Chemistry, Polymers, Lithography, Polymerization, Resistance, Imaging systems, Surface roughness, Transparency

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Proceedings Article | 24 August 2001 Paper

IBM 193-nm bilayer resist: materials, lithographic performance, and optimization

Ranee Kwong, Pushkara Varanasi, Margaret Lawson, Timothy Hughes, George Jordhamo, Mahmoud Khojasteh, Arpan Mahorowala, Ratnam Sooriyakumaran, Phillip Brock, Carl Larson, Debra Fenzel-Alexander, Hoa Truong, Robert Allen

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436892

KEYWORDS: Etching, 193nm lithography, Photomasks, Polymers, Reactive ion etching, Lithography, Silicon, Resistance, Glasses, Antireflective coatings

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Proceedings Article | 24 August 2001 Paper

Polymer design for 157-nm chemically amplified resists

Hiroshi Ito, Gregory Wallraff, Phillip Brock, Nicolette Fender, Hoa Truong, Gregory Breyta, Dolores Miller, Mark Sherwood, Robert Allen

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436857

KEYWORDS: Polymers, Polymerization, Absorption, Chemically amplified resists, Ultraviolet radiation, Spectroscopy, Lithography, Fluorine, Opacity, Transparency

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Proceedings Article | 23 June 2000 Paper

Dissolution/swelling behavior of cycloolefin polymers in aqueous base

Hiroshi Ito, Robert Allen, Juliann Opitz, Thomas Wallow, Hoa Truong, Donald Hofer, Pushkara Varanasi, George Jordhamo, Saikumar Jayaraman, Richard Vicari

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388254

KEYWORDS: Polymers, Polymerization, Carbon, Lithography, Crystals, Semiconducting wafers, Quartz, Absorption, Silicon, Carbonates

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Polycycloolefins prepared by addition polymerization of norbornene derivatives are quite different from hydroxystyrene-based polymers in terms of their interaction with aqueous base. Their dissolution kinetics monitored on a quartz crystal microbalance is not a smooth function of the ratio of the polar to nonpolar functionalities in polymer but abruptly changes from very fast dissolution to massive swelling within a narrow range of composition. The maximum swelling is a function of thickness and the entire film thickness can swell in a few seconds at > 3,000 angstroms/sec or at immeasurably fast rates. The initial concentration of a pendant carboxylic acid in polymer has to be selected to minimize swelling and the concentration of an acid-labile group to induce fast dissolution in the exposed area. Furthermore, swelling which occurs in the partially- exposed regions must be minimized by incorporating a third monomer unit or by adding a dissolution modifying agent (DMA) such as t-butyl cholate. However, the function of DMA which is also acid-labile is quite complex; depending on the matrix polymer composition and its dissolution/swelling behavior, DMA could function as a swelling suppressor or promoter and a carboxylic acid generated by acidolysis of DMA as a dissolution or swelling promoter. Photochemically generated sulfonic acid could also affect the dissolution/swelling behavior. Base hydrolysis of anhydride during development is controlled by the polarity (carboxylic acid concentration) in polymer film, which has been demonstrated in an unequivocal fashion by IR spectroscopy under the condition strongly mimicking the development process and thus could boost development contrast but could hurt performance as well. Thus, incorporation of carboxylic acid in the form of methacrylic acid, for example, in radical copolymerization of norbornene with maleic anhydride must be handled carefully as it would increase the susceptibility of the anhydride hydrolysis and could introduce heterogeneity in the polymer as methacrylic acid is rapidly consumed, producing a terpolymer containing a different molar concentration of norbornene and maleic anhydride (a proof against the commonly believed charge transfer polymerization mechanism).

Proceedings Article | 23 June 2000 Paper

Progress toward developing high-performance 193-nm single-layer positive resist based on functionalized poly(norbornenes)

Pushkara Varanasi, George Jordhamo, Margaret Lawson, K. Rex Chen, William Brunsvold, Timothy Hughes, Robin Keller, Mahmoud Khojasteh, W. Li, Robert Allen, Hiroshi Ito, Juliann Opitz, Hoa Truong, Thomas Wallow

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388280

KEYWORDS: Polymers, Etching, Lithography, Reactive ion etching, Surface roughness, Photomasks, 193nm lithography, Phase shifts, Deep ultraviolet, Photoresist materials

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Proceedings Article | 11 June 1999 Paper

Molecular weight tailoring in methacrylate 193-nm photoresists

Thomas Wallow, Phillip Brock, Hoa Truong, Robert Allen, Juliann Opitz, Donald Hofer

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350162

KEYWORDS: Polymers, Photoresist materials, Lithography, Glasses, Photoresist developing, Systems modeling, Annealing, Roads, Calcium, Control systems

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Proceedings Article | 1 July 1990 Paper

Massively parallel processors in real-time applications

Ken Jung, H. Nguyen, Raghu Raghavan, Hoa Truong

Proceedings Volume 1246, (1990) https://doi.org/10.1117/12.19573

KEYWORDS: Image processing, Array processing, Parallel computing, Signal processing, Image segmentation, Computer programming, Data processing, Control systems, Imaging arrays, Parallel processing

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