Over the past few years the advent of atomic layer deposition (ALD) technology has opened new capabilities to the field of coatings deposition for use in optical elements. At the same time, there have been major advances in both optical designs and detector technologies that can provide orders of magnitude improvement in throughput in the far ultraviolet (FUV) and near ultraviolet (NUV) passbands. Recent review work has shown that a veritable revolution is about to happen in astronomical diagnostic work for targets ranging from protostellar and protoplanetary systems, to the intergalactic medium that feeds gas supplies for galactic star formation, and supernovae and hot gas from star forming regions that determine galaxy formation feedback. These diagnostics are rooted in access to a forest of emission and absorption lines in the ultraviolet (UV), and all that prevents this advance is the lack of throughput in such systems, even in space-based conditions. We outline an approach to use a range of materials to implement stable optical layers suitable for protective overcoats with high UV reflectivity and unprecedented uniformity, and use that capability to leverage innovative ultraviolet/optical filter construction to enable astronomical science. These materials will be deposited in a multilayer format over a metal base to produce a stable construct. Specifically, we will employ the use of PEALD (plasma-enhanced atomic layer deposition) methods for the deposition and construction of reflective layers that can be used to construct unprecedented filter designs for use in the ultraviolet.
Single GaSb Nanowire Field Effect Transistors (NWFETs) were fabricated and their electrical transport
measurements were conducted at the temperatures ranging from 298 K to 503 K. The current on/off ratios as large as 3
orders of magnitude were observed. The Raman spectra and EDAX were performed on single wires to verify the GaSb
property before and after the transport study. The temperature dependent current-voltage characteristic shows
asymmetric current through the device due to asymmetric back-to-back Schottky contacts at the two ends of the wire.
Arrhenius plots revealed effective Schottky barrier heights around ØBeff =0.53eV. Measurement conducted on back-gated nanowire transistors shows the polarity of nanowire to be n-type.