Dr. Honghui Yuan Profile

Dr. Honghui Yuan

researcher(professor) at Shanghai Institute of Technical Physics of the CAS

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Publications (8)

Proceedings Article | 1 April 2020 Presentation + Paper

A multisampling lower-noise visible CMOS detector for aerospace applications

Honghui Yuan, Yongping Chen, Yao Chen, Xing Wan, Shijun Chen

Proceedings Volume 11354, 1135405 (2020) https://doi.org/10.1117/12.2554144

KEYWORDS: CMOS sensors, Transistors, Sensors, Amplifiers, Capacitance, Signal detection, Analog electronics, Visible radiation, Aerospace engineering, Infrared imaging

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In the field of space remote sensing, a visible CMOS detector with a long line of small pixels is needed. In order to meet the requirement of high-resolution earth observation, this paper designs a long-line CMOS detector integrated with PIN detector and readout circuit, based on 0.35 micron process. To reduce the equivalent input noise of the device by true correlation double sampling, CTIA integral amplifier followed by four sampling follow circuit is adopted. In order to meet the requirements of high sampling rate of imaging detection, a four sampling long-line CMOS detector with 10 MHz sampling frequency is designed in this paper. By reducing the width to length ratio of the first stage P-type following transistor to decrease the bus parasitic capacitance and reducing the bias voltage of the P-type following load transistor to increase the driving current, thus the sampling frequency of the read-out circuit is increased from the original 2 MHz to the 10 MHz, which effectively improves the readout frequency of the long-line visible light CMOS detector, In order to achieve true correlated double sampling and reduce the equivalent input noise of the device, the muliti-sampling is used to connect CTIA integral amplifier. Then a low noise and high sampling rate CMOS detector is developed. Through the test, the SNR of CMOS detector can be more than 350, which is twice as that of conventional reading technology. the CMOS detector possesses an equivalent input noise electron less than 50e when the integral time is 200 us and the area of photosensitive is 20 um × 18 um, it can work steadily at the sampling rate of 10MHz, its MTF can exceed 0.5 when it work at 4MHz. The linearity, the output swing and the sensitivity of the detector can meet the requirements of the Aerospace remote system. The development of the CMOS detector has laid an important theoretical foundation and practical value for the future ultra high speed and high definition imaging detection.

Proceedings Article | 2 May 2019 Presentation + Paper

Research on the stability of readout circuit based on single grade OP-AMP for IR detector

Honghui Yuan, Yongping Chen, Zhiwei Huang, Xing Xu, Wuying Li, Yanping Zhong

Proceedings Volume 11004, 110040B (2019) https://doi.org/10.1117/12.2518101

KEYWORDS: Infrared detectors, Capacitors, Sensors, Infrared radiation, Signal detection, Cadmium sulfide, Optical amplifiers, Switches, Infrared sensors, Capacitance

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Proceedings Article | 15 October 2015 Paper

Design and implementation of a high-performance readout circuit for uncooled infrared detector

Honghui Yuan, Shijun Chen, Houming Zhai, Yongping Chen

Proceedings Volume 9674, 96741E (2015) https://doi.org/10.1117/12.2199408

KEYWORDS: Infrared detectors, Mirrors, Sensors, Resistance, Cadmium sulfide, Infrared sensors, Amplifiers, Capacitors, Capacitance, Infrared radiation

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Proceedings Article | 2 September 2014 Paper

A low-temperature bridge-input CMOS circuit for low-impedance detector

HongHui Yuan, YongPing Chen

Proceedings Volume 9284, 92841D (2014) https://doi.org/10.1117/12.2068377

KEYWORDS: Sensors, Resistance, CMOS sensors, Infrared detectors, Infrared sensors, Amplifiers, Resistors, Infrared photography, Infrared radiation, Mercury cadmium telluride

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Proceedings Article | 15 October 2012 Paper

Design and performance of a low noise circuit for VLWIR HgCdTe photoconductive detectors

HongHui Yuan, YongPing Chen, Shijun Chen, Qiang Liu, Xing Xu

Proceedings Volume 8419, 84192O (2012) https://doi.org/10.1117/12.968200

KEYWORDS: Sensors, Resistance, Mercury cadmium telluride, Amplifiers, Infrared sensors, Infrared detectors, Transistors, CMOS sensors, Signal to noise ratio, Signal detection

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Proceedings Article | 8 September 2011 Paper

The research of the coupling of circuit and chip

Yang Wang, Honghui Yuan, Qinfei Xu

Proceedings Volume 8193, 81930C (2011) https://doi.org/10.1117/12.897275

KEYWORDS: Sensors, Resistance, Sensor performance, Optical filters, Radiation effects, Black bodies, Infrared detectors, Signal detection, Infrared radiation, Device simulation

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Proceedings Article | 8 September 2011 Paper

A cryogenic temperature eight-cell CMOS differential current amplifier for IR detectors

Honghui Yuan, YongPing Chen, ShiJun Chen, Qiang Liu, Xing Xu

Proceedings Volume 8193, 81930P (2011) https://doi.org/10.1117/12.899162

KEYWORDS: Infrared detectors, Mercury cadmium telluride, Transistors, Sensors, Cryogenics, Amplifiers, Resistance, Infrared sensors, Capacitance, Infrared imaging

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In order to make medium-long wave HgCdTe IR detector work normally it must be in zero bias voltage, the differential input current preamplifier can easily make HgCdTe IR detector biased at zero voltage. Because IR signals are often very weak, then little disturb can affect the performance of the total detector system very much. In order to achieve high Signal-to-Noise ratio, it is expected that the differential input current preamplifier can be designed to work as close as to the HgCdTe IR detector. That is to say the preamplifier can also work normally at 77K. In this paper, a high-performance low-noise differential input current preamplifier working at cryogenic temperature for HgCdTe IR detectors is designed. Since a differential input folded-cascode structure has been used in the preamplifier's design, it makes that the gain of single stage amplifier can arrive 60dB, the circuit uses high resistant poly as feedback resistance so that 40 MΩ feedback resistance can be integrated on chip at temperature 77k ,which can directly transforms IR detector's current to voltage, avoiding the additional noise by using exterior resister. The preamplifier's noise characteristics were analyzed and the methods for decreasing noise were proposed. This differential input current preamplifier was implemented in 0.5μm CMOS process. The size of eight-cell chip is 3mm×1.9mm. The test result shows that the current preamplifier has good performance at the temperature of 77K. Within the bandwidth of 3.3KHz, the total output voltage noise is 120uV, the equivalent total input noise voltage is 3PA, the equivalent input noise current is 0.03pA/Hz1/2@100Hz. The preamplifier power consumption is less than 1mW at 77K. When the input current is less than 10nA, its linearity has been reached 99%. This circuit can work normally at temperature between 300K to 77K and it can be used for several bands of IR detector. Finally, it can work normally either by ±2 or by ±1.5 voltage power supply. This current preamplifier has been successfully applied in the signal readout of HgCdTe IR detectors for infrared imaging.

Proceedings Article | 20 August 2011 Paper

A high speed and high gain CMOS receiver chip for a pulsed time-of-flight laser rangefinder

Jin-jin Yu, Ruo-han Deng, Hong-hui Yuan, Yong-ping Chen

Proceedings Volume 8192, 819229 (2011) https://doi.org/10.1117/12.900568

KEYWORDS: Optical amplifiers, Pulsed laser operation, Capacitance, Receivers, Amplifiers, Resistors, Attenuators, Edge detection, Semiconductor lasers, Capacitors

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Showing 5 of 8 publications

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