Dr. Hongxi Zhou Profile

Dr. Hongxi Zhou

at University of Electronic Science and Technology

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Proceedings Article | 4 April 2023 Paper

3D Dirac semi-metal Cd3As2/Bi2O2Se film heterojunction for visible to near infrared photo-detection

BuJingDou Lv, Chao Yue, YuChao Wei, XingChao Zhang, HongXi Zhou, YaDong Jiang, Jun Wang

Proceedings Volume 12617, 126173X (2023) https://doi.org/10.1117/12.2666155

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Cd₃As₂ is a representative three-dimensional (3D) Dirac semi-metal material, which is expected to develop high-performance wide spectrum photodetectors due to the unique optical and electrical properties. For instance, the band structure exhibits a unique three-dimensional Dirac structure which express the characteristics of zero band-gap and full spectral absorption, high photocurrent response and the ultra-high charge mobility, these characteristics make it a more potential candidate for photodetection. However, arising from its excellent conductivity, the extremely high dark currents in 3D semi-metal-based photodetector is an imperfection that limit the development of individual Cd₃As₂ film photoconductive detector. Here in, we developed an Cd₃As₂/Bi₂O₂Se heterojunction by thermal depositing Bi₂O₂Se film on the as-prepared Cd₃As₂ film. The Cd₃As₂/Bi₂O₂Se heterojunction film photodetector demonstrates a relative broad spectrum photodetection from visible (405nm) to near infrared (1310nm) at room temperature with high responsivity (R_i) and fast response time (τ). These results show that the dark current is reduced about a half compared to the individual Cd₃As₂ film at the same bias voltage. Subsequently, at the bias voltage of three volts, we tested the detector performance under 808nm laser irradiation, in which the maximum photocurrent responsivity (R_i) can be reached to 17.8 mA/W. We analyze that the greatly enhanced-performance improvement of the device maybe originated from its vertical structure advantages, due to the formed internal potential barrier would be accelerates the speed of collecting carrier. This work provides a suitable method and reference for fabricating broad-spectrum and high-speed Cd₃As₂ based inorganic photodetectors.

Proceedings Article | 18 December 2019 Paper

Sensitive photodetectors based on carbon nanotube/graphene films

Hongxi Zhou, Jun Wang, Yadong Jiang

Proceedings Volume 11334, 113340P (2019) https://doi.org/10.1117/12.2543486

KEYWORDS: Photodetectors, Graphene, Carbon, Chemical vapor deposition, Single walled carbon nanotubes, Absorption, Raman spectroscopy, Nanostructures, Interfaces, Carbon nanotubes

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The family of carbon allotropes (graphene, carbon nanotube) with its rich chemistry and physics, attracts a great deal of attentions in forming novel hybrid nanostructures. However, owing to the low absorption, the performance of pristine graphene and carbon nanotube photodetectors are greatly limited. Combining low-dimensional nanomaterials into hybrid nanostructures is a promising avenue to obtain enhanced material properties and to achieve nanodevices operating with novel principles. Here we demonstrate a photodetector based on carbon nanotube/graphene doped with P3HT. A broadband photodetector (covering 405-980 nm) based on such hybrid films is fabricated with a high photoresponsivity of above 10⁴ A/W. The results presents a potential application for efficient, low-cost, scalable vis-IR photodetection for all-carbon based photodetectors.

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