We report the fabrication and performance characterization of 1550 nm separate absorption, grading, charge, and
InP/InAlAs hetro-multiplication avalanche photodiodes (SAGCHM APDs) for single photon detection applications. The
linear mode performance of the fabricated APDs are firstly characterized that the dark current at 95% of the breakdown
voltage was 30 pA and 15 nA at 200K and 300K, respectively. The gain-bandwidth product of 62 GHz was obtained at
room temperature. For single photons detection characterization, however, our APD was operated in the gated passive
quenching mode, at lower temperature and incorporated with an optimizing spike-cancellation self-differencing circuit. Under the temperature of -50°C and the gate repetition frequency of 100 KHz with pulse width of 2 ns, the lowest dark count probability (Pdc) of 1.2 x 10-5, the highest single-photon detection efficiency (ηdet) of 22.5%, and the lowest noise equivalent power (NEP) of 1.5x10-15 W/(Hz)1/2 were obtained, respectively. Moreover, we demonstrated the transmission distance as a function of quantum bit error rate (QBER) based on the obtained performance parameters. The maximum transmission distance, at QBER=15%, of 43 km was achieved.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.