Lots of attentions owing to its superior properties such as narrow electroluminescence (EL) spectra, tunable emission colors, high luminance, and simple fabrication process. Typically, in a QLED, quantum dots (QD) layer is sandwiched by organic materials as hole transporting layer (HTL) and inorganic zinc oxide (ZnO) nanoparticles as electron transporting layer (ETL), respectively. Because the electron mobility of ZnO is typical higher than the hole mobility of organic material, it results in carrier unbalance and reduces the efficiency. Hence, it is important to improve the hole transporting ability to achieve charge balance condition for higher efficiency. In this study, we have fabricated green QLEDs with two different HTL materials. By using HTL with high mobility and suitable energy level, voltage decreased from 11.1 V to 5.8 V at 10 mA/cm2, together with enhancement of current efficiency from 21.8 cd/A to 58.1 cd/A, and external quantum efficiency from 5.94% to 16.0%, corresponding to 2.6-times improvement.
Recently, Quantum-dot light-emitting diode (QLED) has attracted much attention due to narrow electroluminescence (EL) spectra, low driving voltage, tunable emission colors and simple fabrication. In conventional QLED structure, inorganic zinc oxide (ZnO) nanoparticles was usually used as electron transporting layer material by spin-coating. However, defects in solution-processed ZnO film may quench quantum dot (QD) emission and increase the driving voltage. In this study, we fabricated ZnO by sputtering process with the inverted structure. Compared to the QLED with solution-processed ZnO as the ETL, driving voltage of the device with sputtered-ZnO as the ETL significantly decreased from 7.04 V to 2.95 at current density of 20 mA/cm2, while the current efficiency remained at 11.46 and 11.70 cd/A at current density of 80 mA/cm2.