Sheet resistance of laser-irradiated Ge2Sb2Te5 films prepared by magnetron sputtering was measured by the four-point
probe method. With increasing laser power the sheet resistance underwent an abrupt change of four orders of magnitude
(107→103 Ω/sq) at about 580mW , x-ray diffraction studies of the three samples before, at and after the abrupt point
revealed the phase change process of the Ge2Sb2Te5 thin films from amorphous to crystal states. Optical constants of the
three samples were measured by ellipsometry. Based on the experimental results, the relationship between the electrical /
optical properties and the structure of the Ge2Sb2Te5 thin films is discussed and it is shown that optical-electrical hybrid
data storage may be realized using optical writing and electrical reading.
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