Dr. Huan Ren Profile

Dr. Huan Ren

at KLA China

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Author

Publications (2)

Proceedings Article | 10 April 2024 Poster + Paper

EPE monitoring with enhanced metrology using KLA pattern-centric solutions

Huan Ren, Kaushik Sah, Guojie Cheng, Xu Gao, Weiwei Tang, Gary Zhang, Xin Li, Ningqi Zhu, Zach Franz, Torben Mikael Hansen, Henrik Hartmann Henrichsen, Vikram Tolani, Roel Gronheid

Proceedings Volume 12955, 1295537 (2024) https://doi.org/10.1117/12.3010816

KEYWORDS: Metrology, Resistance, Inspection, Critical dimension metrology, Design, Scanning electron microscopy, Overlay metrology, Semiconducting wafers, Defect detection

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Edge placement error (EPE) has become a critically important metric in semiconductor manufacturing. EPE quantifies the difference between the designed and printed layout of devices, coupling overlay and critical dimension (CD) of different litho layers. EPE consists of global and local components and can manifest itself between different physical layers of a device (e.g., via, metal) or within a single layer (primarily relevant for multi-patterning). This paper will study the simplest case of a single layer using an N10 litho-etch-litho-etch (LELE) metal layer patterning and will mainly cover global EPE. Monitoring and control of EPE will enable the stability of integrated circuit devices in advanced technology nodes. Inline EPE prediction in the process control loop at previous litho and etch steps enables early wafer status diagnosis and process disposition, which will improve process margin and wafer yield. Overlay and CD are essential inputs for EPE monitoring, prediction and control. Direct measurement of EPE on the device provides a reference value for an EPE model with overlay and CD measured on special targets. KLA’s pattern-centric solutions provide unique and accurate functionality in EPE metrology by analyzing SEM images on devices or targets in combination with the chip design. In this paper, we conduct experiments for EPE modeling and perform reference analysis using KLA’s pattern-centric solutions, targeting a higher pass rate of e-test, lower defectivity and targeted SEM inspection. KLA’s pattern-centric solutions are applied to e-beam images and provide die-to-database analysis by extracting measurements. The resultant EPE analysis can provide a higher correlation between electrical test data and targeted hotspot inspection, and can also be used to build the EPE model, for example, using e-overlay or CD targets. Overall, the results of these studies show good agreement with EPE model predictions and measured EPE by KLA’s pattern-centric solutions on device structures.

Proceedings Article | 24 March 2020 Presentation + Paper

Advanced process control loop for SAQP pitch walk with combined lithography, deposition and etch actuators

Huan Ren, Antonio Mani, Sixiao Han, Xin Li, Xuemei Chen, Dieter Van Den Heuvel

Proceedings Volume 11325, 1132523 (2020) https://doi.org/10.1117/12.2552911

KEYWORDS: Etching, Semiconducting wafers, Lithography, Plasma etching, Critical dimension metrology, Process control, Actuators, Optical lithography, Scanning electron microscopy

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