Polyaniline-(PANI)-poly (methyl methacrylate) (PMMA) blend was used to fabricate the Schottky device: Al/ PANI-PMMA /Au. Current density-voltage (J-V) capacitance-voltage (C-V), and complex impedance measurements were used to evaluate the junction parameters of the devices. The photovoltaic parameters of the cells are estimated from the analysis of the current-voltage characteristics under illumination.
A composite of polyaniline (PANI) containing iron oxides (Fe3O4) with nanometer size was prepared by a chemical method. The electrical properties of (PANI-Fe3O4) sandwich structure using ohmic gold and blocking aluminium electrodes were studied. The current density - voltage (J-V) characteristics for the device resemble the typical dark current versus applied voltage characteristic for conventional Schottky diode. Electronic parameters have been calculated using J-V and capacitance-voltage (C-V) measurements.
Capacitance measurements of oxygen doped films of α or β iron phthalocyanine particles dispersed in a binder polymer polycarbonate (MK), with mixed (Al, Au) electrodes are studied. The capacitance of the cells changes in accordance with the morphological forms. A complete study of the space charge density as a function of temperature is carried out. The results obtained are in accordance with the model proposed for the dopant, oxygen. The low conductivity of the β iron phthalocyanine is due in large part to deep trap carriers presented in this phase.