Ms. Hye-Young Kang Profile

Hye-Young Kang

at Hanyang Univ

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Publications (6)

Proceedings Article | 20 October 2006 Paper

Haze detection and haze-induced process latitude variation for low-k1 193 nm lithography

Sung-Jin Kim, Jin-Baek Park, Sung-Hyuck Kim, Hye-Young Kang, Young-Min Kang, Seung-Wook Park, Ilsin An, Hye-Keun Oh

Proceedings Volume 6349, 63492T (2006) https://doi.org/10.1117/12.685941

KEYWORDS: Air contamination, Photomasks, Critical dimension metrology, Transmittance, Spectroscopic ellipsometry, Lithography, Electroluminescence, Ellipsometry, Semiconductors, Pellicles

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Proceedings Article | 29 March 2006 Paper

Reflow modeling for elongated contact hole shape

Ji-Eun Lee, Dai-Gyoung Kim, Kang Baek Kim, Mi-Rim Jung, Hye-Young Kang, Jong-Sun Kim, Joo-Yoo Hong, Hye-Keun Oh, Jun-Tack Park

Proceedings Volume 6153, 61533T (2006) https://doi.org/10.1117/12.656286

KEYWORDS: Photoresist processing, Interfaces, Critical dimension metrology, Glasses, Resolution enhancement technologies, Optical proximity correction, Thin films, Mathematical modeling, Lithography, Motion models

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Proceedings Article | 15 March 2006 Paper

Optimization of chromeless phase mask by comparing scattering bars with zebra patterns

Hye-Young Kang, Ji-Eun Lee, Eun-A Kwak, Eun-Jin Kim, Seung-Wook Park, Sung-Hyuck Kim, Dong-Soo Shin, HeeJun Jeong, Hye-Keun Oh

Proceedings Volume 6154, 615429 (2006) https://doi.org/10.1117/12.656145

KEYWORDS: Photomasks, Scattering, Optical proximity correction, Electroluminescence, Resolution enhancement technologies, Phase shifts, Lithography, Chromium, Lithographic illumination, Binary data

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Resolution enhancement technology (RET) refer to techniques that extend the usable resolution of an imaging system without decreasing the wavelength of light or increasing the numerical aperture (NA) of the imaging tool. Off-axis illumination (OAI) and phase shift mask (PSM) are essentially accompanied with optical proximity correction (OPC) for most devices nowadays. In general, these three techniques do not work in isolation and the most aggressive mainstream lithography approaches use combinations of all RETs. In fact, OAI and PSM are essentially useless for typical chip-manufacturing applications unless accompanied by OPC. For low k₁ imaging, strong OAI such as Quasar or dipole illumination types is the best. We used dipole illumination in this study. By using strong OAI, the amplitude of the 0^th order is decreased and the amplitude of the 1^st order is increased. Chromeless phase lithography (CPL) is one of PSM technologies and CPL mask is the possible solution for small geometry with low mask error enhancement factor (MEEF). CPL uses only 180 degrees phase-shifter on transparent glass without chromium film to define light-shielding region, destructive interference between light transmitted through the 0 degree and 180 degrees regions produces dark images. To obtain the best resolution, proper OPC is required with CPL. While the most common and straightforward application of OPC is to simply move absorber edges on the mask by giving simple mask bias, the interesting and important additional technique is the use of scattering bars. Also, we can use zebra patterns for the transmission control. Mask intensity transmission changes can impact the image quality. Zebra patterns are formed by adding chromium transverse features. The transmission will be controlled by the zebra pattern density. Technology node with ArF source is studied and the mask optimization is found to be a critical. And the linewidth of scattering bars, transmission (using zebra feature) are varied at line and space (L/S) patterns. We used 65 nm node 5 L/S and 45 nm node isolated line pattern. In order to optimize the zebra pattern density, we need to control the line width and pitch of the zebra patterns. For dense line and isolated line, the use of scattering bars and zebra patterns affected target critical dimension. We found out the better process window at dense 65 nm node by comparing the use of scattering bars with zebra patterns. Likewise, we optimized the isolated 45 nm node.

Proceedings Article | 8 November 2005 Paper

Mask error enhancement factor variation with pattern density

Hye-Young Kang, Sung-Hyuck Kim, Chang-Ho Lee, Hye-Keun Oh

Proceedings Volume 5992, 599233 (2005) https://doi.org/10.1117/12.632408

KEYWORDS: Photomasks, Critical dimension metrology, Diffusion, Semiconducting wafers, Scattering, Optical proximity correction, Electronics, Chemically amplified resists, Applied physics, Semiconductors

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Proceedings Article | 28 June 2005 Paper

ArF photoresist parameter optimization for mask error enhancement factor reduction

Chang Lee, Seok Han, Kyoung Park, Sangwoong Yoon, Hye Kang, Hyun Oh, Ji Lee, Young Kim, Tae Kim, Hye-Keun Oh

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617210

KEYWORDS: Photomasks, Semiconducting wafers, Photoresist materials, Line edge roughness, Absorbance, Critical dimension metrology, Polymers, Photoresist processing, Diffusion, Optical properties

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Proceedings Article | 4 May 2005 Paper

ArF photoresist parameter optimization for mask error enhancement factor reduction

Chang Ho Lee, Seok Han, Kyung Sil Park, Hye Young Kang, Hyun Wook Oh, Ji Eun Lee, Kyung Me Kim, Young Ho Kim, Tae Sung Kim, Hye-Keun Oh

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600308

KEYWORDS: Photomasks, Semiconducting wafers, Photoresist materials, Line edge roughness, Absorbance, Critical dimension metrology, Polymers, Photoresist processing, Diffusion, Optical properties

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Showing 5 of 6 publications

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