Ms. Hyemi Lee Profile

Hyemi Lee

at SK Hynix Inc

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Author

Publications (8)

Proceedings Article | 23 October 2015 Paper

Advanced repair solution of clear defects on HTPSM by using nanomachining tool

Hyemi Lee, Munsik Kim, Hoyong Jung, Sangpyo Kim, Donggyu Yim

Proceedings Volume 9635, 96351J (2015) https://doi.org/10.1117/12.2196941

KEYWORDS: Quartz, Etching, Deposition processes, Photomasks, Critical dimension metrology, Phase shifts, Scanning electron microscopy, Particles, Chromium, Image restoration

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Proceedings Article | 16 September 2014 Paper

Defects caused by blank masks and repair solution with nanomachining for 20nm node

HyeMi Lee, ByungJu Kim, MunSik Kim, HoYong Jung, Sang Pyo Kim, DongGyu Yim

Proceedings Volume 9235, 92350G (2014) https://doi.org/10.1117/12.2066278

KEYWORDS: Photomasks, Inspection, Particles, Scanning electron microscopy, Manufacturing, Image processing, Chromium, Defect detection, Defect inspection, Transmittance

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Proceedings Article | 14 October 2011 Paper

A study on irregular growing defect mechanism and removal process

Hyemi Lee, JeaYoung Jun, GooMin Jeong, SangChul Kim, SangPyo Kim, ChangReol Kim

Proceedings Volume 8166, 816613 (2011) https://doi.org/10.1117/12.898975

KEYWORDS: Air contamination, Ions, Chromium, Photomasks, Oxygen, Transmittance, Semiconducting wafers, Image processing, Transmission electron microscopy, Etching

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Proceedings Article | 17 October 2008 Paper

The study of CD behavior due to transmission control position change within photomask substrate

Munsik Kim, Hyemi Lee, Sungha Woo, Kangjoon Seo, Yongkyoo Choi, Changyeol Kim

Proceedings Volume 7122, 712239 (2008) https://doi.org/10.1117/12.801432

KEYWORDS: Critical dimension metrology, Photomasks, Semiconducting wafers, Quartz, Control systems, Printing, Refractive index, Laser scattering, Optical lithography, Ultrafast lasers

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Proceedings Article | 19 May 2008 Paper

The verification of printability about marginal defects and the detectability at the inspection tool in sub 50nm node

Hyemi Lee, Goomin Jeong, Kangjun Seo, Sangchul Kim, changreol kim

Proceedings Volume 7028, 70282V (2008) https://doi.org/10.1117/12.793101

KEYWORDS: Bridges, Inspection, Photomasks, Semiconducting wafers, Image transmission, Critical dimension metrology, Defect detection, Manufacturing, Optical lithography, Scanners

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Since mask design rule is smaller and smaller, Defects become one of the issues dropping the mask yield. Furthermore controlled defect size become smaller while masks are manufactured. According to ITRS roadmap on 2007, controlled defect size is 46nm in 57nm node and 36nm in 45nm node on a mask. However the machine development is delayed in contrast with the speed of the photolithography development. Generally mask manufacturing process is divided into 3 parts. First part is patterning on a mask and second part is inspecting the pattern and repairing the defect on the mask. At that time, inspection tools of transmitted light type are normally used and are the most trustful as progressive type in the developed inspection tools until now. Final part is shipping the mask after the qualifying the issue points and weak points. Issue points on a mask are qualified by using the AIMS (Aerial image measurement system). But this system is including the inherent error possibility, which is AIMS measures the issue points based on the inspection results. It means defects printed on a wafer are over the specific size detected by inspection tools and the inspection tool detects the almost defects. Even though there are no tools to detect the 46nm and 36nm defects suggested by ITRS roadmap, this assumption is applied to manufacturing the 57nm and 45nm device. So we make the programmed defect mask consisted with various defect type such as spot, clear extension, dark extension and CD variation on L/S(line and space), C/H(contact hole) and Active pattern in 55nm and 45nm node. And the programmed defect mask was inspected by using the inspection tool of transmitted light type and was measured by using AIMS 45-193i. Then the marginal defects were compared between the inspection tool and AIMS. Accordingly we could verify whether defect size is proper or not, which was suggested to be controlled on a mask by ITRS roadmap. Also this result could suggest appropriate inspection tools for next generation device among the inspection tools of transmitted light type, reflected light type and aerial image type.

Proceedings Article | 30 October 2007 Paper

Preliminary verifiability of the aerial image measurement tool over photolithography process

Hyemi Lee, Goomin Jeong, Sangchul Kim, Oscar Han

Proceedings Volume 6730, 67303A (2007) https://doi.org/10.1117/12.746786

KEYWORDS: Semiconducting wafers, Photomasks, Electroluminescence, Critical dimension metrology, Optical lithography, Scanners, Image processing, Scanning electron microscopy, Logic, Transmittance

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The AIMS (Aerial Image Measurement Tool) measures approximate aerial images to scanner results by adjusting the numerical aperture, illumination type and partial parameters. Accordingly, AIMS tool is used generally to verify the issue points during manufacturing a mask. Normally using a mask for photolithography needs twice verifications. One is the qualification in the mask shop. The other is verification over the photo process using the mask in the wafer fab. If evaluated data at AIMS can be trusted about photo process ability including energy latitude (EL), depth of focus (DOF), CD uniformity (CDU), pattern fidelity and mask defects including repair area, AIMS can function as a first filter before shipping the mask. That means the AIMS data can be used as a preliminary data in the wafer fab. So this study is focused on correlation between measured data at AIMS fab 193i and ArF scanner over the photo process such as EL, DOF, CDU, pattern fidelity and mask defects. First, various patterns are made on attenuated PSM from 80 to 65nm tech. Next correlations are calculated about EL, DOF and CDU by using same optical conditions, measurement points and etc at AIMS and Scanner. Also the aerial images from AIMS are compared with scanner results on defective side how those are matched with each other. Consequently defect printability and CDU map at AIMS were similar to the scanner. In CDU point of view, AIMS exceeds the predictive ability of the mask CD SEM. Moreover it means that wafer CDU can be corrected (improved) independently on the CDU result of the wafer fab by using CDU correctable femto laser tool which reduces transmittance of the mask. Surprisingly, it is possible. And Aerial image about mask defects including repair area is useful to predict the problem of the mask, since it is similar to wafer results. But aerial image compared with wafer image has more difference at 65nm technology node than at 80nm. If adjustment of threshold or measuring method can be done, prediction of the scanner result will have no matter. In conclusion, predictive results at AIMS over photo process can be applied as a preliminary data and it can be used to another index verifying the mask quality.

Proceedings Article | 30 October 2007 Paper

The cleaning effects of mask aerial image after FIB repair in sub-80nm node

Hyemi Lee, Goomin Jeong, Sookyeong Jeong, Sangchul Kim, Oscar Han

Proceedings Volume 6730, 673022 (2007) https://doi.org/10.1117/12.746793

KEYWORDS: Critical dimension metrology, Photomasks, Image processing, Semiconducting wafers, Bridges, Scanners, Contamination, Manufacturing, Ions, Lithography

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Proceedings Article | 20 October 2006 Paper

Multi-point CD measurement method to evaluate pattern fidelity and performance of mask

Munsik Kim, Hyemi Lee, Kanjoon Seo, Dongwook Lee, Yongkyoo Choi, Sunghyun Oh, Oscar Han

Proceedings Volume 6349, 634944 (2006) https://doi.org/10.1117/12.686473

KEYWORDS: Critical dimension metrology, Photomasks, Scanning electron microscopy, Image filtering, Line edge roughness, Anisotropic filtering, Time metrology, Anisotropic diffusion, Scatterometry, Metrology

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Showing 5 of 8 publications

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