We propose a novel concept of projection-type electron beam lithography to pattern nanometer scale periodic features
with better throughput than a conventional-type of electron beam lithography system. Here, the nanometer scale periodic
patterns are obtained from the phase contrast high resolution transmission electron microscopy images of the crystalline
samples which are tenth of nanometer scales. We, thus, named this method as atomic image projection electron beam
lithography (AIPEL). To realize this novel concept, we have modified the objective lens of conventional 200kV field
emission transmission electron microscopy and also inserted patterning lens between the objective lens and the
lithographic stage to vary the patterning magnification continuously from 50 times to 300 times. By using this AIPEL
system, we successfully demonstrate nanopatterns with various sizes and shapes using the various high resolution lattice
images obtained from single crystalline Si and polycrystalline β-Si3N4. We can vary the shapes of nanometer scale
patterns by changing mask materials itself or the zone axis of observation in one mask material, and can vary the size of
patterns by changing the magnification of patterning. Finally, we will discuss how one can improve the quality of image
obtained from mask material.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.