Sub-2nm On Product Overlay (OPO), scribe line width reduction, and high-order scanner correctibles are driving innovative overlay (OVL) targets. One promising new imaging-based overlay (IBO) OVL target to address such challenging trends in multiple semiconductor segments is a small pitch AIM (sAIM). sAIM is in essence an IBO target with grating (previous layer) beside grating (current layer) which could be placed in a few layouts: square, rectangular, and Mosaic. In this work, we will present the sAIM operational concept and performance including Total Measurement Uncertainty (TMU), residuals, and accuracy (ADI on-target offset vs. ACI on-device or target), which is often referred to as Non-Zero Offset (NZO).
Scribe line width reduction and high-order scanner correctibles are driving overlay (OVL) target size reduction. Shrinking imaging-based overlay (IBO) target size for standard target types, such as AIM® or BiB, is not possible without a performance impact. In this paper, new target layouts and supporting OVL tool setup methods will be explored to enable small OVL targets to meet performance, accuracy, and robustness requirements. Two approaches have been explored: (1) measuring smaller grating pitches utilizing oblique illumination, and (2) measuring targets not obeying 180° rotational symmetry requirement (half-targets). Each of these approaches allows shrinking conventional imaging OVL target area by a factor of two. Evaluation results are reviewed in this paper and further target size reduction is presented.
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