Dr. Igor Krestnikov Profile

Dr. Igor Krestnikov

Application Manager at Innolume GmbH

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Author

Publications (20)

Proceedings Article | 8 March 2023 Presentation + Paper

1190 nm Fourier domain mode locked (FDML) laser for optical coherence tomography (OCT)

M. Bashir, S. Lotz, M. Klufts, I. Krestnikov, C. Jirauschek, R. Huber

Proceedings Volume 12367, 1236707 (2023) https://doi.org/10.1117/12.2652884

KEYWORDS: Optical coherence tomography, Tunable filters, Optical filters, Polarization, Modulation, Laser scattering, Laser optics, Laser frequency, Mode locking, Semiconductor optical amplifiers, Tunable lasers, Wavelength tuning

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Proceedings Article | 15 February 2012 Paper

High-average power femtosecond VECSELs with tunable repetition rates up to 10 GHz

O. Sieber, V. Wittwer, M. Hoffmann, I. Krestnikov, S. Mikhrin, D. Livshits, M. Golling, T. Südmeyer, U. Keller

Proceedings Volume 8242, 824210 (2012) https://doi.org/10.1117/12.907002

KEYWORDS: Femtosecond phenomena, Quantum wells, Mode locking, Laser resonators, Output couplers, Metrology, Quantum dots, Laser optics, Mirrors, Modes of laser operation

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Proceedings Article | 15 February 2012 Paper

High-power quantum dot semiconductor disk lasers

Jussi Rautiainen, Mantas Butkus, Igor Krestnikov, Edik Rafailov, Oleg Okhotnikov

Proceedings Volume 8242, 824207 (2012) https://doi.org/10.1117/12.905067

KEYWORDS: Mirrors, Quantum dots, Semiconductor lasers, Semiconductors, Disk lasers, Output couplers, Frequency conversion, Diamond, Gallium arsenide, Harmonic generation

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Proceedings Article | 30 January 2012 Paper

Self-assembled quantum dot-based swept laser source for optical coherence tomography applications

N. Peyvast, D. T. D. Childs, N. Krstajic, Z. Lu, S. Matcher, D. Livshits, A. Shkolnik, I. Krestnikov, R. Hogg

Proceedings Volume 8213, 821336 (2012) https://doi.org/10.1117/12.907977

KEYWORDS: Optical coherence tomography, Quantum wells, Laser sources, Gallium arsenide, Optical filters, Laser systems engineering, Superluminescent sources, Neodymium, Quantum dots, Amplifiers

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Proceedings Article | 1 June 2011 Paper

Evaluation of a swept-laser optical coherence tomography light source based on a novel quantum-dot based semiconductor optical amplifier

Nik Krstajic, David Childs, Negin Peyvast, Deepa Kasaragod, Stephen Matcher, Igor Krestnikov, Richard Hogg

Proceedings Volume 8091, 80911S (2011) https://doi.org/10.1117/12.889247

KEYWORDS: Optical coherence tomography, Skin, Light sources, Semiconductor optical amplifiers, Diffraction gratings, Tissues, Image resolution, Imaging systems, Sensors, Tunable lasers

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Proceedings Article | 22 February 2011 Paper

All quantum dot based femtosecond VECSEL

M. Hoffmann, O. Sieber, W. Pallmann, V. Wittwer, I. Krestnikov, S. Mikhrin, D. Livshits, G. Malcolm, C. Hamilton, Y. Barbarin, T. Südmeyer, U. Keller

Proceedings Volume 7919, 79190X (2011) https://doi.org/10.1117/12.873731

KEYWORDS: Picosecond phenomena, Mode locking, Quantum dots, Femtosecond phenomena, Neodymium, Diamond, Electroluminescence, Ions, Quantum wells, Copper

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Proceedings Article | 22 February 2011 Paper

Multi-watt orange light generation by intracavity frequency doubling in a dual-gain quantum dot semiconductor disk laser

J. Rautiainen, I. Krestnikov, J. Nikkinen, O. Okhotnikov

Proceedings Volume 7917, 791702 (2011) https://doi.org/10.1117/12.873166

KEYWORDS: Mirrors, Reflectivity, Quantum dots, Semiconductor lasers, Disk lasers, Semiconductors, Second-harmonic generation, Output couplers, Nonlinear crystals, Frequency conversion

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Proceedings Article | 23 February 2010 Paper

Cost-effective WDM optical interconnects enabled by quantum dot comb lasers

D. Livshits, D. Yin, A. Gubenko, I. Krestnikov, S. Mikhrin, A. Kovsh, G. Wojcik

Proceedings Volume 7607, 76070W (2010) https://doi.org/10.1117/12.843587

KEYWORDS: Wavelength division multiplexing, Quantum dots, Optical interconnects, Laser applications, Modulation, Optoelectronics, Current controlled current source, Diodes, Semiconductor lasers, Fabry–Perot interferometers

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Proceedings Article | 3 December 2009 Paper

Laser diode comb spectrum amplification preserving low RIN for WDM applications

D. Yin, A. Gubenko, I. Krestnikov, D. Livshits, S. Mikhrin, A. Kovsh, G. Wojcik

Proceedings Volume 7631, 76311R (2009) https://doi.org/10.1117/12.852219

KEYWORDS: Wavelength division multiplexing, Quantum dots, Modulation, Semiconductor lasers, Computing systems, Eye, WDM-PON, Light sources, Waveguides, Optical filters

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Proceedings Article | 7 February 2009 Paper

120°C 20 Gbit/s operation of 980nm VCSEL based on sub-monolayer growth

Friedhelm Hopfer, Alex Mutig, Gerrit Fiol, Phillip Moser, Dejan Arsenijevic, Vitaly Shchukin, Nikolai Ledentsov, Sergey Mikhrin, Igor Krestnikov, Daniel Livshits, Alexey Kovsh, Matthias Kuntz, Dieter Bimberg

Proceedings Volume 7229, 72290C (2009) https://doi.org/10.1117/12.813064

KEYWORDS: Modulation, Vertical cavity surface emitting lasers, Temperature metrology, Indium gallium arsenide, Resistance, Semiconductor lasers, Quantum wells, Oxides, Detection theory, Signal analysis

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Proceedings Article | 3 February 2009 Paper

A single comb laser source for short reach WDM interconnects

Gregory Wojcik, Dongliang Yin, Alexey Kovsh, Alexey Gubenko, Igor Krestnikov, Sergey Mikhrin, Daniil Livshits, David Fattal, Marco Fiorentino, Raymond Beausoleil

Proceedings Volume 7230, 72300M (2009) https://doi.org/10.1117/12.816278

KEYWORDS: Wavelength division multiplexing, Modulation, Laser sources, Semiconductor lasers, Quantum dots, Current controlled current source, Erbium, Chromium, Eye, Optical pumping

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Proceedings Article | 1 May 2008 Paper

Quantum dot comb-laser as efficient light source for silicon photonics

A. Kovsh, A. Gubenko, I. Krestnikov, D. Livshits, S. Mikhrin, J. Weimert, L. West, G. Wojcik, D. Yin, C. Bornholdt, N. Grote, M. Maximov, A. Zhukov

Proceedings Volume 6996, 69960V (2008) https://doi.org/10.1117/12.784949

KEYWORDS: Semiconductor lasers, Optical filters, Quantum dots, Silicon photonics, Modulation, Light sources, Quantum dot lasers, Waveguides, Fabry–Perot interferometers, Dense wavelength division multiplexing

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Proceedings Article | 1 February 2008 Paper

Recent advances in long wavelength quantum dot based lasers

A. Ramdane, A. Martinez, S. Azouigui, D.-Y. Cong, K. Merghem, A. Akrout, C. Gosset, G. Moreau, F. Lelarge, B. Dagens, J.-G. Provost, A. Accard, O. Le Gouezigou, I. Krestnikov, A. Kovsh, M. Fischer

Proceedings Volume 6900, 690008 (2008) https://doi.org/10.1117/12.761699

KEYWORDS: Mode locking, Quantum dots, Semiconductor lasers, Tolerancing, Quantum wells, Clocks, Gallium arsenide, Active optics, Laser applications, Modulation

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Proceedings Article | 6 July 2006 Paper

20-Gb/s direct modulation of 980 nm VCSELs based on submonolayer deposition of quantum dots

F. Hopfer, A, Mutig, G. Fiol, M. Kuntz, S. Mikhrin, I. Krestnikov, D. Livshits, A. Kovsh, C. Bornholdt, V. Shchukin, N. Ledentsov, V. Gaysler, N. Zakharov, P. Werner, D. Bimberg

Proceedings Volume 6350, 635003 (2006) https://doi.org/10.1117/12.693006

KEYWORDS: Modulation, Vertical cavity surface emitting lasers, Quantum dots, Indium arsenide, Gallium arsenide, Eye, Indium gallium arsenide, Quantum wells, Transmission electron microscopy, Gallium

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Proceedings Article | 14 April 2006 Paper

Absorber length optimisation for sub-picosecond pulse generation in passively mode-locked 1.3μm quantum dot laser diodes

A. Rae, M. Thompson, R. Penty, I. White, A. Kovsh, S. Mikhrin, D. Livshits, I. Krestnikov

Proceedings Volume 6184, 61841F (2006) https://doi.org/10.1117/12.662892

KEYWORDS: Mode locking, Semiconductor lasers, Quantum dot lasers, Picosecond phenomena, Pulsed laser operation, Single mode fibers, Diodes, Quantum dots, Second-harmonic generation, Telecommunications

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Proceedings Article | 22 February 2006 Paper

1.3-1.5 µm quantum dot lasers on foreign substrates: growth using defect reduction technique, high-power CW operation, and degradation resistance

N. Ledentsov, A. Kovsh, V. Shchukin, S. Mikhrin, I. Krestnikov, A. Kozhukhov, L. Karachinsky, M. Maximov, I. Novikov, Yu. Shernyakov, I. Soshnikov, A. Zhukov, Yu. Musikhin, V. Ustinov, N. Zakharov, P. Werner, T. Kettler, K. Posilovic, D. Bimberg, M. Hu, H. Nguyen, K. Song, Chung-en Zah

Proceedings Volume 6133, 61330S (2006) https://doi.org/10.1117/12.641483

KEYWORDS: Gallium arsenide, Continuous wave operation, Semiconductor lasers, Quantum wells, Quantum dots, Indium arsenide, Indium gallium arsenide, Laser stabilization, High power lasers

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We have performed a systematic study of structural and optical properties of Quantum dot (QDs) lasers based on InAs/InGaAs quantum dots grown on GaAs substrates emitting in the 1.3 - 1.5 μm range. 1.3 μm range QD lasers are grown using GaAs as matrix material. It is shown that the lasers, grown with large number of QD stacks are metamorphic, with plastic relaxation occurring through the formation of misfit dislocations. Thus, 1.3 μm QD lasers with large number of stacks grown without strain compensation are metamorphic. Another type of defects is related to local dislocated clusters, which are the most dangerous. When proper optimization of the growth conditions is carried out, including a selective thermal etching off of statistically formed dislocated clusters through the defect-reduction technique (DRT), no significant impact of misfit dislocations on the degradation robustness is observed. In uncoated devices a high cw single mode power of ~700 mW is realized limited by thermal roll-over, which is not affected by 500 h ageing at room temperature. At elevated temperatures the main degradation mechanism revealed is catastrophic optical mirror damage (COMD). When the facet are passivated, the devices show the extrapolated operation lifetime in excess of 10⁶ h at 40°C at ~100 mW cw single mode output power. Longer wavelength (1.4 - 1.5 μm) devices are grown on metamorphic (In,Ga,Al)As layers deposited on GaAs substrates. In this case, the plastic relaxation occurs through formation of both misfit and threading dislocations. The latter kill the device performance. Using DRT in this case enables blocking of threading dislocation with growth of QDs in defect-free upper layers. DRT is realized by selective capping of the defect-free areas and high-temperature etching of nano-holes at the non-capped regions near the dislocation. The procedure results in etching of holes and is followed by fast lateral overgrowth with merger of the growth fronts. If the defect does not propagate into the upper layer when the hole is capped, the upper layers become defect-free. Lasers based on this approach exhibited emission wavelength in the 1.4 -1.5 μm range with a differential quantum efficiency of about ~50%. The narrow-stripe lasers operate in a single transverse mode and withstand continuous current density above 20 kA cm^-2 without degradation. A maximum continuous-wave output power of 220 mW limited by thermal roll-over is obtained. No beam filamentation was observed up to the highest pumping levels. Narrow stripe devices with as-cleaved facets are tested for 60°C (800 h) and 70°C (200 h) on-chip temperature. No noticeable degradation has been observed at 50 mW cw single mode output power. This shows the possibility of degradation-robust devices on foreign substrates. The technology opens a way for integration of various III-V materials and may target degradation-free lasers on silicon for further convergence of computing and communications.

Proceedings Article | 28 April 2005 Paper

Temperature dependent output characteristics of p-doped 1.1 and 1.3 µm quantum dot lasers

Z. Mi, S. Fathpour, P. Bhattacharya, A. Kovsh, S. Mikhrin, I. Krestnikov, A. Kozhukhov, N. Ledentsov

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.589891

KEYWORDS: Quantum dot lasers, Modulation, Laser damage threshold, Gallium, Quantum dots, Temperature metrology, Gallium arsenide, Electrons, Heterojunctions, Measurement devices

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Proceedings Article | 28 April 2005 Paper

Edge and surface-emitting tilted cavity lasers

N. Ledentsov, V. Shchukin, A. Kovsh, S. Mikhrin, I. Krestnikov, A. Kozhukhov, N. Gordeev, L. Karachinsky, M. Maximov, I. Novikov, Yu. Shernyakov

Proceedings Volume 5722, (2005) https://doi.org/10.1117/12.601953

KEYWORDS: Refractive index, Reflectivity, Gallium arsenide, Quantum wells, Semiconductor lasers, Waveguides, Vertical cavity surface emitting lasers, Electroluminescence, Near field, Reflection

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Proceedings Article | 31 January 2005 Paper

QD lasers: physics and applications

Nikolai Ledentsov, Alexey Kovsh, Vitaly Shchukin, Sergey Mikhrin, Igor Krestnikov, A. Kozhukhov, Leonid Karachinsky, Mikhail Maximov, Innokenty Novikov, Yuri Shernyakov, Ilja Soshnikov, Alexey Zhukov, Efim Portnoi, Victor Ustinov, D. Gerthsen, Pallab Bhattacharya, N. Zakharov, P. Werner, Friedhelm Hopfer, Matthias Kuntz, Dieter Bimberg

Proceedings Volume 5624, (2005) https://doi.org/10.1117/12.570284

KEYWORDS: Gallium arsenide, Semiconductor lasers, Vertical cavity surface emitting lasers, Indium arsenide, Annealing, Quantum dots, Laser stabilization, Transmission electron microscopy, Heterojunctions, Indium gallium arsenide

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Proceedings Article | 2 August 2004 Paper

Tilted cavity laser (Critical Review Lecture)

Vitaly Shchukin, Nikolai Ledentsov, S. Mikhrin, I. Krestnikov, A. Kozhukhov, Alexey Kovsh, Leonid Karachinsky, Mikhail Maximov, Innokenty Novikov, Yuri Shernyakov

Proceedings Volume 5509, (2004) https://doi.org/10.1117/12.562390

KEYWORDS: Reflectivity, Semiconductor lasers, Electroluminescence, Quantum wells, Refractive index, Gallium arsenide, Quantum dots, Reflectors, Laser stabilization, Temperature metrology

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