Prof. Ilsin An Profile

Prof. Ilsin An

at Hanyang Univ

SPIE Involvement:

Author

Publications (27)

Proceedings Article | 23 March 2010 Paper

Influence of mask surface roughness on 22nm node extreme ultraviolet lithography

Eun-Jin Kim, Jee-Hye You, Seoung-Sue Kim, Han-Ku Cho, Jinho Ahn, Ilsin An, Hye-Keun Oh

Proceedings Volume 7636, 76362K (2010) https://doi.org/10.1117/12.846895

KEYWORDS: Surface roughness, Extreme ultraviolet lithography, Reflectivity, Photomasks, Carbon, Extreme ultraviolet, Ruthenium, Image processing, Contamination, Optical lithography

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Proceedings Article | 4 March 2010 Paper

Pattern deformation caused by deformed pellicle with ArF exposure

Jee-Hye You, Ilsin An, Hye-Keun Oh

Proceedings Volume 7640, 76402E (2010) https://doi.org/10.1117/12.846483

KEYWORDS: Pellicles, Photomasks, Critical dimension metrology, Semiconducting wafers, Transmittance, Optical lithography, Laser energy, Prisms, Air contamination, Binary data

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SPIE Journal Paper | 1 March 2010 Open Access

Commentary: Multichannel ellipsometry for monitoring processes

Ilsin An

JNP, Vol. 4, Issue 01, 040302, (March 2010) https://doi.org/10.1117/12.10.1117/1.3374056

KEYWORDS: Ellipsometry, Sensors, Thin films, Gold, Optical properties, Spectroscopic ellipsometry, Crystals, Spectroscopy, Personal digital assistants, Charge-coupled devices

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Proceedings Article | 1 April 2009 Paper

Embedded micro/nano channel formation for three-dimensional negative-tone photoresist microstructuring

Sang-Kon Kim, Hye-Keun Oh, Young-Dae Jung, Ilsin An

Proceedings Volume 7273, 72730R (2009) https://doi.org/10.1117/12.814244

KEYWORDS: Lithography, Photoresist materials, Photomasks, 3D microstructuring, Polymers, Image processing, Microelectromechanical systems, Ultraviolet radiation, Photoresist processing, 3D modeling

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Proceedings Article | 1 April 2009 Paper

Temperature and critical dimension variation in a single wafer on hot plate due to non-uniform heat source

Bobae Kim, Joon-Min Park, Hyunsu Kim, Ilsin An, Seung-Wook Park, Hye-Keun Oh

Proceedings Volume 7273, 72732Z (2009) https://doi.org/10.1117/12.814009

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Photoresist materials, Process control, Lithography, Semiconductors, Etching, Photoresist processing, Chemically amplified resists, Polymers

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Proceedings Article | 18 March 2009 Paper

Incident angle change caused by different off-axis illumination in extreme ultraviolet lithography

Eun-Jin Kim, Jee-Hye You, Seong-Sue Kim, Han-Ku Cho, Ilsin An, Hye-Keun Oh

Proceedings Volume 7271, 727143 (2009) https://doi.org/10.1117/12.814031

KEYWORDS: Lithographic illumination, Photomasks, Extreme ultraviolet lithography, Critical dimension metrology, Extreme ultraviolet, Optical lithography, Lithography, Reflectivity, Coherence (optics), Resolution enhancement technologies

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Proceedings Article | 4 December 2008 Paper

22nm 1:1 line and space patterning by using double patterning and resist reflow process

Joon Min Park, Ji-Hye Yoo, Joo-Yoo Hong, Ilsin An, Hye-Keun Oh

Proceedings Volume 7140, 714038 (2008) https://doi.org/10.1117/12.804643

KEYWORDS: Double patterning technology, Photoresist processing, Etching, Lithography, Photomasks, Optical lithography, Extreme ultraviolet, Immersion lithography, Glasses, Applied physics

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SPIE Journal Paper | 1 October 2008

Development of vacuum ultraviolet multichannel ellipsometry and its application to the characterization of ultrathin zirconium oxide films

Ilsin An

JNP, Vol. 2, Issue 01, 021905, (October 2008) https://doi.org/10.1117/12.10.1117/1.3025960

KEYWORDS: Aluminum, Crystals, Vacuum ultraviolet, Dielectrics, Optical properties, Annealing, Capacitors, Zirconium, Oxides, Atomic layer deposition

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Proceedings Article | 26 March 2008 Paper

Resist reflow process for arbitrary 32 nm node pattern

Joon-Min Park, Ilsin An, Hye-Keun Oh

Proceedings Volume 6923, 69233A (2008) https://doi.org/10.1117/12.772130

KEYWORDS: Double patterning technology, Photoresist processing, Optical proximity correction, Extreme ultraviolet, Resolution enhancement technologies, Information technology, Lithography, Applied physics, Ultraviolet radiation, Roads

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Proceedings Article | 24 March 2008 Paper

Ellipsometric inspection of the inner surface of pellicle-covered masks

Sangyouk Lee, Chulgi Song, Jusang Rhim, Hyoungjoo Lee, Jaisun Kyoung, Soobok Chin, Taehyuk Ahn, Ilsin An

Proceedings Volume 6922, 692227 (2008) https://doi.org/10.1117/12.772151

KEYWORDS: Pellicles, Photomasks, Phase modulation, Inspection, Air contamination, Crystals, Ellipsometry, Polarization, Ultraviolet radiation, Lithography

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Proceedings Article | 7 March 2008 Paper

Optimum dose variation caused by post exposure bake temperature difference inside photoresist over different sublayers and thickness

Young-Min Kang, Ilsin An, Do Wan Kim, Hye-Keun Oh

Proceedings Volume 6924, 69244T (2008) https://doi.org/10.1117/12.772136

KEYWORDS: Semiconducting wafers, Diffusion, Critical dimension metrology, Silicon, Photoresist processing, Photoresist materials, Chemically amplified resists, Lithography, Temperature metrology, Antireflective coatings

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In principle, the dose should not be changed to make the same linewidth if a perfect anti-reflection coating (ARC) is used for all the sublayers underneath the resist. However, the optimum dose for different sublayers and thicknesses are different even though perfect ARC is used. The post exposure bake (PEB) process of a chemically amplified resist is one of the key processes to make very small features of semiconductor device. The photo-generated acid makes the deprotection of protected polymer, and this deprotection highly depends on the PEB temperature and time. The diffusion length of acid is also strongly dependent on PEB temperature and time. As the linewidth of the device decreases, smaller diffusion length is required to reduce the roughness of the line edge and width. One of the key factors to determine the deprotection and acid diffusion is the initial temperature rising and the final real temperature inside the resist. The unpredictable temperature rising to the pre-set temperature mainly causes the variation of linewidth and the optimum dose. In order to predict the accurate PEB temperature and time dependency of the linewidth and dose, the heat transfer from the hot plate to the resist on the top of the multiply stacked sublayers over the silicon wafer has to be known since the reaction and diffusion occur inside the resist, not on the top of the bare silicon wafer. We studied heat transfer from the hot plate to the top of the resist including conductivity and thickness of each sublayer. For this purpose, a novel numerical approach incorporated with analytic method was proposed to solve the heat conduction problem. The unknowns for temperature are located only at the interfaces between layers, so that it is fast and efficient. We calculated the time that is consumed for the resist to attain the prescribed PEB temperature for the different multi stacks and thicknesses. Calculation shows that the temperature rising is different and final temperature on top of the resist is also different for various sublayers and thicknesses of theirs including resist itself. Experiment by us and others also clearly show that there is a definite temperature difference between on top of the bare wafer and on top of the resist. The effects for the different layer stacks and thicknesses are investigated to obtain proper dose and linewidth control due to different actual resist PEB temperature.

Proceedings Article | 7 March 2008 Paper

32 nm 1:1 line and space patterning by resist reflow process

Joon-Min Park, Heejun Jeong, Ilsin An, Hye-Keun Oh

Proceedings Volume 6924, 69244S (2008) https://doi.org/10.1117/12.772133

KEYWORDS: Double patterning technology, Electron beam lithography, Photoresist processing, Critical dimension metrology, Semiconductors, Photoresist materials, Optical simulations, Glasses, Information technology, Lithography

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Proceedings Article | 5 April 2007 Paper

Ellipsometric studies of the absorption of liquid by photo resist

Hee Jeong, Jaesun Kyung, Songyi Park, Kiyong Lee, Hyungjoo Lee, Hyuknyeong Cheon, Ilsin An, Sook Lee

Proceedings Volume 6518, 651849 (2007) https://doi.org/10.1117/12.710811

KEYWORDS: Water, Ellipsometry, Liquids, Absorption, Refractive index, Spectroscopic ellipsometry, Ultraviolet radiation, Immersion lithography, Imaging systems, Optical properties

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Proceedings Article | 20 October 2006 Paper

Haze detection and haze-induced process latitude variation for low-k1 193 nm lithography

Sung-Jin Kim, Jin-Baek Park, Sung-Hyuck Kim, Hye-Young Kang, Young-Min Kang, Seung-Wook Park, Ilsin An, Hye-Keun Oh

Proceedings Volume 6349, 63492T (2006) https://doi.org/10.1117/12.685941

KEYWORDS: Air contamination, Photomasks, Critical dimension metrology, Transmittance, Spectroscopic ellipsometry, Lithography, Electroluminescence, Ellipsometry, Semiconductors, Pellicles

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Proceedings Article | 6 October 2006 Paper

Picosecond nonlinear optical transmission measurement in SiO2/TiO2 one-dimensional photonic crystals

Min Jung Kim, Jisoo Hwang, Seung Mook Lee, Bum Ku Rhee, Ilsin An, Jeong Weon Wu

Proceedings Volume 6352, 63523Q (2006) https://doi.org/10.1117/12.691562

KEYWORDS: Nonlinear optics, Picosecond phenomena, Photonic crystals, Sol-gels, Optical testing, Refractive index, Absorption, Crystals, Laser beam diagnostics, Solids

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Proceedings Article | 24 March 2006 Paper

The effect of transmission reduction by reticle haze formation

Sung-Jin Kim, Jai-Sun Kyoung, Jin-Back Park, Young-Hoon Kim, Seung-Wook Park, Il-Sin An, Hye-Keun Oh

Proceedings Volume 6152, 61524B (2006) https://doi.org/10.1117/12.656284

KEYWORDS: Air contamination, Photomasks, Transmittance, Critical dimension metrology, Spectroscopic ellipsometry, Ellipsometry, Reticles, Phase shifts, Binary data, Lithography

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Proceedings Article | 15 March 2006 Paper

Optical anisotropy approach in spectroscopic ellipsometry to determine the CD of contact hole patterns

Jaisun Kyoung, Hyuknyeong Cheon, Sangbin Noh, Jongkyu Cho, Ilsin An, Sukjoo Lee, Hangu Cho

Proceedings Volume 6155, 61550L (2006) https://doi.org/10.1117/12.656875

KEYWORDS: Anisotropy, Ellipsometry, Photoresist materials, Spectroscopic ellipsometry, Optical lithography, Scanning electron microscopy, Polarization, Calibration, Process modeling, Process control

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Proceedings Article | 9 November 2005 Paper

Reticle haze measurement by spectroscopic elipsometry

Young-Hoon Kim, Seong-Jin Kim, Jin-Back Park, Mi-Lim Jung, Sung-Hyuck Kim, Seung-Wook Park, Jai-Sun Kyoung, Il-Sin An, Hye-Keun Oh

Proceedings Volume 5992, 59924L (2005) https://doi.org/10.1117/12.632375

KEYWORDS: Air contamination, Reticles, Photomasks, Ellipsometry, Transmittance, Inspection, Spectroscopic ellipsometry, Spectroscopy, Semiconductors, Atomic force microscopy

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Proceedings Article | 4 May 2005 Paper

Contact hole reflow by finite element method

Sang-Kon Kim, Ilsin An, Hye-Keun Oh, Sun Muk Lee, Cheolkyu Bok, Seung Chan Moon

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600704

KEYWORDS: Heat flux, Finite element methods, Photoresist processing, Thermal modeling, Coating, Thermal analysis, Convection, Chemical analysis, Scanning electron microscopy, Optical lithography

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Proceedings Article | 4 May 2005 Paper

Simulation of thermal resist flow process

Sang-Kon Kim, Ilsin An, Hye-Keun Oh, Sun Muk Lee, Cheolkyu Bok, Seung Chan Moon

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.600699

KEYWORDS: Image processing, Photoresist processing, Critical dimension metrology, Image analysis, Lithography, Optical lithography, Thermal modeling, Cadmium, Motion analysis, Diffusion

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Proceedings Article | 12 June 2003 Paper

Practical extracting method of PEB parameters by using rotating compensator spectroscopic ellipsometer

Hyoung-Hee Kim, Young-Keun Kwon, Seung-Wook Park, Kyung-Yoon Bang, Ilsin An, Kun-Sang Lee, Hye-Keun Oh

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485071

KEYWORDS: Lithography, Polymers, Spectroscopy, Refractive index, Chemical reactions, Statistical analysis, Thin films, Photoresist processing, Absorption, Photorefractive polymers

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Proceedings Article | 2 June 2003 Paper

Use of rotating compensator spectroscopic ellipsometry for monitoring the photoresist etching on Si wafer

Yong-Seok Choi, Yun-Hwan Kim, Gon-Ho Kim, Hye-Keun Oh, Ilsin An

Proceedings Volume 5038, (2003) https://doi.org/10.1117/12.483478

KEYWORDS: Etching, Atmospheric plasma, Semiconducting wafers, Silicon, Dielectrics, Photoresist materials, Spectroscopic ellipsometry, Ellipsometry, Plasma, Antireflective coatings

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Proceedings Article | 16 July 2002 Paper

Rotating compensator spectroscopic ellipsometry for line-width control

Ha-Young Lee, Kyoung-Yoon Bang, Jaeho Lee, Heungin Bak, Young-Soo Sohn, Ilsin An

Proceedings Volume 4689, (2002) https://doi.org/10.1117/12.473509

KEYWORDS: Ellipsometry, Spectroscopic ellipsometry, Polarization, Polarizers, Optical lithography, Dielectric polarization, Dielectrics, Calibration, Photoresist materials, Anisotropy

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Proceedings Article | 14 September 2001 Paper

Photoresist thickness variation due to local and global topography

Jin-Young Kim, Heungin Bak, Young-Soo Sohn, Ilsin An, Kyoung-Yoon Bang, Hye-Keun Oh, Woo-Sung Han

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435798

KEYWORDS: Coating, Photoresist materials, Semiconducting wafers, Critical dimension metrology, Liquids, Chlorine, Thin film coatings, Thin films, Polymers, System on a chip

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Proceedings Article | 23 June 2000 Paper

Soft bake effect in 193-nm chemically amplified resist

Moon-Gyu Sung, Young-Mi Lee, Eun-Mi Lee, Young-Soo Sohn, Ilsin An, Hye-Keun Oh

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388270

KEYWORDS: Refractive index, Lithography, Chemically amplified resists, Optical properties, Photoresist processing, Semiconducting wafers, Chlorine, Temperature metrology, Diffusion, Silicon

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Proceedings Article | 11 June 1999 Paper

Refractive index change during exposure for 193-nm chemically amplified resists

Hye-Keun Oh, Young-Soo Sohn, Moon-Gyu Sung, Young-Mi Lee, Eun-Mi Lee, Sung Hwan Byun, Ilsin An, Kun-Sang Lee, In-Ho Park

Proceedings Volume 3678, (1999) https://doi.org/10.1117/12.350249

KEYWORDS: Refractive index, Transmittance, Chemically amplified resists, Lithography, Picture Archiving and Communication System, Cesium, Thin films, Excimer lasers, Absorption, Photoresist processing

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Proceedings Article | 7 July 1997 Paper

Line-width variation with different sublayers for 0.25-um minimum feature size in DUV lithography

Hye-Keun Oh, Young-Seon Cho, Yeon-Un Jeong, Hoyoung Kang, Gun-Sang Lee, Ilsin An, In-Ho Park

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.276021

KEYWORDS: Deep ultraviolet, Lithography, Reflectivity, Light sources, Thin films, Optical properties, Antireflective coatings, Refractive index

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Showing 5 of 27 publications

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