According to the 2007 edition of the ITRS roadmap, the requirement for CD uniformity of isolated lines on a binary or
attenuated phase shift mask is 2.1nm (3σ) in 2008 and requires improvement to1.3 nm (3σ) in 2010. In order to meet the
increasing demand for CD uniformity on photo masks, improved CD metrology is required. A next generation AFM,
InSightTM 3DAFM, has been developed to meet these increased requirements for advanced photo mask metrology. The
new system achieves 2X improvement in CD and depth precision on advanced photo masks features over the previous
generation 3D-AFM. This paper provides measurement data including depth, CD, and sidewall angle metrology. In
addition the unique capabilities of damage-free defect inspection and Nanoimprint characterization by 3D AFM are
presented.
Development of OPC strategies, both model-based and rules-based, can be greatly accelerated by identifying and minimizing metrology bias during OPC iterations. The CD-SEM edge-detection algorithms best suited for precision on 90 nm and 65 nm node ground-rule structures often do not provide linear response across a wide range of line sizes, line-end gaps and other structures of interest during OPC refinement. To ensure that reliable metrology data is being fed into the OPC calculation engine, reference measurements that are independent of (a) feature size, (b) feature shape and (c) material composition must be made to optimize CD-SEM edge-detection for this application. We show the importance of on-line atomic force microscopy (AFM) measurements to improve CD-SEM measurements and speed turnaround of OPC model generation. Measurements are made on through-pitch and through-size lines and spaces, both after litho and after etch and compared with CD-SEM measurements.
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