ZnMgO thin films were prepared on Si substrates by aerosol deposition method using zinc acetate and magnesium acetate as precursors. The obtained films were investigated by scanning electron microscopy (SEM), energy dispersive xray (EDX) and X-Ray Diffraction (XRD) analysis. SEM and EDX investigations showed that the produced thin films are homogeneous from the point of view of morphology and composition. The investigation of photosensitivity demonstrated that the heterostructures of ZnMgO thin films deposited on Si substrates are sensitive in a wide spectral range from ultraviolet (UV) to infrared (IR) radiation, with a highest sensitivity in the UV region.
The recent flame based growth strategy offers a simple and versatile fabrication of various (one, two, and three-dimensional) nano- and microstructures from different metal oxides (ZnO, SnO2, Fe2O3, etc.) in a desired manner.[1] ZnO structures ranging from nanoscales wires to macroscopic and highly porous 3D interconnected tetrapod networks have been successfully synthesized, characterized and utilized for various applications. The ZnO micro- and nanoneedles grown at walls in silicon trenches showed excellent whispering gallery mode resonances and photocatalytic properties.[2] Using the same strategy, large polycrystalline micro- and nanostructured ZnO platelets can be grown with grains interconnected together via grain boundaries and these grain boundaries exhibit a higher conductivity as compared to individual grains.[3] This flame transport synthesis (FTS) approach offers the growth of a large amount of ZnO tetrapods which have shown interesting applications because of their 3D spatial shape and micro-and nanoscale size, for example, interconnected tetrapods based devices for UV-detection and gas sensing.[4-5] Because of their complex 3D shape, ZnO tetrapods can be used as efficient filler particles for designing self-reporting,[6] and other interesting composites. The nanostructured materials exhibit an important role with respect to advanced biomedical applications as grown ZnO structures have shown strong potentials for antiviral applications.[7] Being mechanically strong and micro-and nanoscale in dimensions, these ZnO tetrapods can be easily doped with other elements or hybridized with various nanoparticles in form of hybrid ZnO tetrapods which are suitable for various multifunctional applications, for example, these hybrid tetrapods showed improved gas sensing properties.[8] The sacrificial nature of ZnO allows the for growth of new tetrapods and 3D network materials for various advanced applications, for example, highly porous and ultra light carbon based Aerographite materials[9] and hollow silicon tetrapods.[10] These carbon based highly porous network can be further utilized for growth of new hybrid 3D nanomaterials, for example, Aerographite- GaN[11] and Aerographite-ZnO[12] for advanced optical and other applications.
We report on the development of electrochemical etching technology for the production of multilayer porous structures (MPS) allowing one to fabricate Bragg reflectors on the basis of GaN bulk substrates grown by Hydride Vapor Phase Epitaxy (HVPE). The formation of MPS during anodization is caused by the spatial modulation of the electrical conductivity throughout the surface and the volume of the HVPE-grown GaN substrate, which occurs according to a previously proposed model involving generation of pits and their overgrowth. We found that the topology of the porous sheets constituting the MPS is different in the vicinity of N-face and Ga-face of the bulk wafer, it being of conical shape near the N-face and of hemispherical shape near the Ga-face. The composition of electrolytes, their concentration as well as the anodization potential applied during electrochemical etching are among technological parameters optimized for designing MPS suitable for Bragg reflector applications. It is shown also that regions with various porosities can be produced in depth of the sample by changing the anodization potential during the electrochemical etching.
We report on maskless fabrication of photonic crystal (PhC) circuits based on ultrathin (d ~ 15 nm) nanoperforated GaN membranes exhibiting a triangular lattice arrangement of holes with diameters of 150 nm. In recent years, we have proposed and developed a cost-effective technology for GaN micro- and nanostructuring, the so-called surface charge lithography (SCL), which opened wide possibilities for a controlled fabrication of GaN ultrathin membranes. SCL is a maskless approach based on direct writing of negative charges on the surface of a semiconductor by a focused ion beam (FIB). These charges shield the material against photo-electrochemical (PEC) etching. Ultrathin GaN membranes suspended on specially designed GaN microstructures have been fabricated using a technological route based on SCL with two selected doses of ion beam treatment. Calculation of the dispersion law in nanoperforated membranes in the approximation of scalar waves is indicative of the occurrence of surface and bulk modes, and there is a range of frequencies where only surface modes can exist. Advantages of the occurrence of two types of modes in ultrathin nanoperforated GaN membranes from the point of view of their incorporation in photonic and optoelectronic integrated circuits are discussed. Along with this, we present the results of a comparative analysis of persistent photoconductivity (PPC) and optical quenching (OQ) effects occurring in continuous and nanoperforated ultrathin GaN suspended membranes, and assess the mechanisms behind these phenomena.
Cathodoluminescence (CL) microanalysis has been used to investigate ultra-thin suspended GaN membranes fabricated from GaN epilayer surfaces by focused ion beam (FIB) pre-treatment and subsequent photoelectrochemical (PEC) etching. The analysis of the spectral and spatial distribution of the emitted photons from GaN nanomembranes gives insight into the technologically important physical properties which are strongly influenced by microstructural defects associated with dopants and native defects. CL emission is associated with key features of the GaN nano-membranes including the suspended nano-membranes, the etch-resistant ion beam implantation support structures, etch-resistant dislocation-related whiskers and the underlying regions of etched GaN. Monochromatic CL images show that suspended nano-membranes emit ~3.4 eV photons which at 295 K are associated with free exciton transitions, and ~2.2 eV photons which are associated with defects related to implantation induced deep acceptor states. Blue shift of the CL near band edge emission at ~3.4 eV indicates that the suspended GaN nanomembranes exhibit the combined effects of quantum confinement and compressive strain.
We show that by subjecting GaN epilayers on sapphire substrates to low-energy/low-dose ion treatment with subsequent
photoelectrochemical etching it is possible to fabricate ultra-thin GaN membranes in the form of nano-roof hanging over
networks of whiskers representing threading dislocations. The suspended membranes prove to be transparent to both
UV-radiation and keV-energy electrons, their architecture being dependent upon the stirring conditions of the electrolyte
during electrochemical etching. The obtained results are indicative of electrical conductivity, flexibility and excellent
mechanical stability of ultra-thin GaN membranes characterized by prevailing yellow cathodoluminescence.
We demonstrate the possibility for controlled micro- and nanostructuring of GaN layers by low-dose focused-ion-beam (FIB) treatment with subsequent photoelectrochemical (PEC) etching. The proposed novel maskless approach based on ultra-fast direct writing of surface negative charge that shields the material against PEC etching allows one to fabricate GaN nanowalls and nanowires with lateral dimensions as small as 100 nm. Compared with commonly used lithography masks and/or FIB etching approaches for patterning GaN, the surface charge lithography enables one to fabricate high-aspect ratio micro- and nanostructures and mitigates the need for additional mask layers on the surface prior to etching, and is much faster than FIB etching alone reducing furthermore the ion exposure of material and therefore reducing ion beam damage. We show, in particular, the possibility to etch voids in between structures as narrow as 200 nm and to fabricate GaN suspended membranes and sub-micrometer hollow squares with the thickness defined by the main projection range of implanted ions. The obtained results demonstrate the feasibility of maskless device fabrication based on low-dose FIB direct writing with subsequent wet etching.
Using terahertz time-domain spectroscopy we investigate how quantum, magnetic and electrostatic confinement
alters the photoconductivity of nanostructured semiconductors. In 2.0 THz and 2.9THz GaAs/AlGaAs quantum
cascade structures under a magnetic field we observe transitions from the 1s to 2p- or 2p+ magneto-exciton
states. The electron cyclotron resonance is prominent at high excitation fluence. Additionally, we report that
the conductivity of photoexcited electrons in nanoporous InP honeycombs obeys the Drude model of free-carrier
absorption, while the dark conductivity does not. This finding can be explained as a result of surface band bending
spatially separating photoexcited electrons and holes, and also accounts for the long electron recombination
lifetime (exceeding 100 ns) at low temperature.
ZnO-based red phosphors were prepared by different methods. One phosphor was grown from a Na2B4O7 melt, and another one was prepared from a ZnO:Eu2O3 powder via electron beam treatment. The e-beam processing is found to result in the formation of a high quality layer on the surface of ZnO:Eu2O3 powder. The analysis of the emission related to the Eu3+ 4f-4f intrashell transitions suggests that the phosphor grown from the Na2B4O7 melt represents a nanocomposite consisting of ZnO and Na2B4O7 nanoparticles, a part of Eu3+ ions being incorporated into ZnO and another part into Na2B4O7 constituent, while in the phosphor prepared from ZnO:Eu2O3 powder Eu3+ ions are selectively incorporated into the Zn sublattice of the ZnO host.
Continuous GaN films were grown on the top of cracked Si- doped n+-GaN epilayers by MOCVD techniques. Raman- scattering studies of the samples indicated strain-free top GaN film. The biaxial compressive stress estimated by using x-ray diffraction analysis was as low as 0.036 GPA for sample grown under optimized conditions. The results obtained show that the use of an intermediate relaxed n+-GaN:Si layer is perspective for growing high quality GaN films.
High purity In0.53Ga0.47As grown on InP by liquid phase epitaxy with small amounts of rare earth dysprosium (Dy) in the melt was investigated. The presence of Dy dramatically reduced the charge carrier and residual donor concentration, and shifted the low temperature photoluminescence peaks toward higher energies. Room temperature Raman spectra were also studied. The Raman shift of the GaAs-like longitudinal optical phonon band increased with the Dy content in the growth melt. The results were explained by the effect of gettering of unintentional donor impurities in the melt by Dy, as well as by the effect of strain modification in the layers due to the possible incorporation of Dy.
Simple preparation technique of nanoporous semiconductors by anodization has opened new ways to form and investigate quantum and surface effects in nanosized objects. It has also allowed technologists to extend the range of possible practical applications of well-known semiconducting materials. The bright visible photoluminescence (PL), in particular, of porous silicon has made this material very promising in the technology of light-emitting devices. The visible PL of nanosized silicon particles is supposed to be connected with a quantum size effect which transforms the indirect gap material into a direct gap one with a simultaneous strong increase of EG. This type of band gap engineering approach may be useful when applied to indirect gap semiconductors, other than Si. Porous GaP is such an example; it was fabricated recently and has exhibited intense green PL and a broadened LO phonon Raman peak. In this communication we present detailed experimental results on Raman scattering (RS) spectra of porous GaP layers obtained by electrochemical anodization of (100) and (111) substrates in hydrofluoric acid solution at different current densities.
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