We examined the effect of AlGaInN interlayer on the performance of red InGaN laser diodes through numerical simulations. The findings indicate a significant rise in output power from 146 mW to 170 mW as well as an improvement in slope efficiency from 0.23 W/A to 0.52 W/A. Additionally, the proposed device exhibits improved gain and radiative current density.
High-electron-mobility transistor (HEMT) devices made of gallium nitride can produce significant power and high frequency with performance levels that surpass those of conventional silicon and other cutting-edge semiconducting FET technologies. In this paper, we simulate and analyze the outcomes of two high-electron mobility transistor (HEMT) designs. One arrangement, named as conventional structure, consists of an AlGaN layer stacked above a GaN layer forming a heterojunction. At this junction, a two-dimensional electron gas (2DEG) layer is created, which serves as the structure's distinguishing feature. To enhance the device performance, the alternative structure, named as proposed structure, adds an AlN spacer in the middle of the existing AlGaN and GaN films. In this study, a very high maximum saturation drain current is reported with appropriate optimization parameters. The study compares the energy band diagram, electric field arrangement, and drain output curves of both structures. Furthermore, this research suggests that combining AlGaN/AlN/GaN HEMTs with LEDs can enhance the functionality of LEDs from an application standpoint. The simulations are performed by utilizing APSYS CROSSLIGHT software and it is shown that the proposed structure has outstanding outcomes.
The performance and efficiency of 25 μm Indium Gallium Nitride (InGaN) blue micro light emitting diodes (μLEDs) is improved by optimizing electron blocking layer (EBL). The simulation is carried out through APSYS (Advanced Physical Models of Semiconductor Devices). Different μLEDs with various p-AlGaN EBL concentrations and EBL thicknesses were analyzed to discuss the effects of different EBL designs on the internal quantum efficiency (IQE), emission intensity, and output power of InGaN-based μLEDs. Simulation results showed an enhancement in IQE of up to 60% at a current density of 0.8 A/cm2 with an increase in EBL thickness and a decrease in aluminium (Al) concentration. The ideal μLED device is obtained with optimized EBL from different combinations of thicknesses and concentrations of Al in p-AlGaN EBL. Similarly, emission intensity is enhanced 4 times more than the e mission intensity of the reference structure at low current density. The enhanced optical and electrical performance of InGaN-based μLED is due to high carrier transport in the active region, which results in high radiative recombination of electrons and holes and thus high IQE and output power. Therefore, this study is crucial for the design of high-performance InGaN-based μLEDs at low current density.
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