Dr. Jacques C.J. van der Donck Profile

Dr. Jacques C.J. van der Donck

Senior Scientist/Particle Contamination at TNO

SPIE Involvement:

Author

Publications (15)

Proceedings Article | 13 June 2022 Presentation

Highly spatially resolved chemical metrology on latent resist images

Maarten van Es, Mehmet Selman Tamer, Robbert Bloem, Elfi van Zeijl, Jacques C. Verdonck, Adam Chuang, Diederik Maas

Proceedings Volume PC12055, PC1205504 (2022) https://doi.org/10.1117/12.2614293

KEYWORDS: Metrology, Spatial resolution, Semiconductor manufacturing, Photoresist materials, Photonic microstructures, Microscopy, Lithography, Inspection, Electron beams, Electron beam lithography

Read Abstract +

Proceedings Article | 13 March 2018 Paper

Advanced defect classification by smart sampling, based on sub-wavelength anisotropic scatterometry

Peter van der Walle, Esther Kramer, Rob Ebeling, Helma Spruit, Paul Alkemade, Silvania Pereira, Jacques van der Donck, Diederik Maas

Proceedings Volume 10585, 105852D (2018) https://doi.org/10.1117/12.2297188

KEYWORDS: Particles, Scattering, Scatterometry, Defect detection, Scanning electron microscopy, Scanners, Signal detection, Optical metrology, Semiconducting wafers

Read Abstract +

Proceedings Article | 26 June 2017 Paper

Deep sub-wavelength metrology for advanced defect classification

P. van der Walle, E. Kramer, J. C. van der Donck, W. Mulckhuyse, L. Nijsten, F. Bernal Arango, A. de Jong, E. van Zeijl, H. E. Spruit, J. van den Berg, G. Nanda, A. van Langen-Suurling, P. F. Alkemade, S. Pereira, D. Maas

Proceedings Volume 10329, 103294N (2017) https://doi.org/10.1117/12.2272414

KEYWORDS: Metrology, Manufacturing, Scanners, Latex, Optical spheres, Particles, Semiconducting wafers, Scanning electron microscopy, Signal detection, Speckle, Wafer-level optics, Silicon, Reticles, Inspection, Defect detection, Atomic force microscopy, Contamination control, Defect inspection, Optical microscopy, Particle contamination

Read Abstract +

Proceedings Article | 8 March 2016 Paper

Sub 20nm particle inspection on EUV mask blanks

Peter Bussink, Jean-Baptiste Volatier, Peter van der Walle, Erik Fritz, Jacques van der Donck

Proceedings Volume 9778, 977835 (2016) https://doi.org/10.1117/12.2219058

KEYWORDS: Inspection, Particles, Scattering, Imaging systems, Extreme ultraviolet, Deep ultraviolet, Silicon, Metrology, Scatterometry, Particle systems, Reticles, Cameras, Objectives, Fiber optic handling equipment

Read Abstract +

Proceedings Article | 21 June 2015 Paper

Detection of fast flying nanoparticles by light scattering over a large volume

F. Pettazzi, S. Bäumer, J. van der Donck, A. Deutz

Proceedings Volume 9526, 95260O (2015) https://doi.org/10.1117/12.2186079

KEYWORDS: Particles, Sensors, Scattering, Light scattering, Laser scattering, Signal detection, Nanoparticles, Contamination, Mirrors, Interference (communication)

Read Abstract +

Proceedings Article | 17 April 2014 Paper

TNO reticle handling test platform

W. Crowcombe, C. Hollemans, E. Fritz, J. C. J. van der Donck, N. Koster

Proceedings Volume 9048, 904831 (2014) https://doi.org/10.1117/12.2047377

KEYWORDS: Reticles, Particles, Extreme ultraviolet, Atmospheric particles, Contamination, Extreme ultraviolet lithography, Particle contamination, Lithography, Robotics, Inspection

Read Abstract +

Proceedings Article | 2 April 2014 Paper

Implementation of background scattering variance reduction on the rapid nano particle scanner

Peter van der Walle, Sandro Hannemann, Daan van Eijk, Wouter Mulckhuyse, Jacques C. van der Donck

Proceedings Volume 9050, 905033 (2014) https://doi.org/10.1117/12.2048684

KEYWORDS: Particles, Scanners, Inspection, Scattering, Prisms, Mirrors, Speckle pattern, Extreme ultraviolet lithography, Reticles, Light scattering

Read Abstract +

Proceedings Article | 10 April 2013 Paper

Increased particle inspection sensitivity by reduction of background scatter variance

Peter van der Walle, Pragati Kumar, Dmitry Ityaksov, Richard Versluis, Diederik Maas, Olaf Kievit, Jochem Janssen, Jacques C. van der Donck

Proceedings Volume 8681, 868116 (2013) https://doi.org/10.1117/12.2011092

KEYWORDS: Particles, Speckle pattern, Inspection, Reticles, Scattering, Scanners, Cameras, Polarization, Microscopy, Extreme ultraviolet lithography

Read Abstract +

Proceedings Article | 8 November 2012 Paper

Nanoparticle detection limits of TNO's Rapid Nano: modeling and experimental results

Peter van der Walle, Pragati Kumar, Dmitry Ityaksov, Richard Versulis, Diederik Maas, Olaf Kievit, Jochem Janssen, Jacques van der Donck

Proceedings Volume 8522, 85222Q (2012) https://doi.org/10.1117/12.2006408

KEYWORDS: Particles, Scanners, Scattering, Reticles, Cameras, Performance modeling, Nanoparticles, Bidirectional reflectance transmission function, Silicon, Extreme ultraviolet lithography

Read Abstract +

Proceedings Article | 3 April 2012 Paper

Contamination control: removing small particles from increasingly large wafers

A. de Jong, J. C. van der Donck, T. Huijser, O. Kievit, R. Koops, N. Koster, F. Molkenboer, A. M. M. Theulings

Proceedings Volume 8324, 832423 (2012) https://doi.org/10.1117/12.916366

KEYWORDS: Particles, Plasma, Semiconducting wafers, Electrodes, Ions, Carbon, Argon, Copper, Atmospheric particles, Contamination control

Read Abstract +

Proceedings Article | 23 March 2012 Paper

A multistep approach for reticle cleaning

N. Koster, J. C. J. van der Donck, J. K. Stortelder, A. J. de Jong, F. T. Molkenboer

Proceedings Volume 8322, 83220R (2012) https://doi.org/10.1117/12.918034

KEYWORDS: Carbon, Particles, Plasma, Reticles, Semiconducting wafers, Liquids, Scanning electron microscopy, Argon, Extreme ultraviolet, Contamination

Read Abstract +

Proceedings Article | 14 October 2011 Paper

Optimized qualification protocol on particle cleanliness for EUV mask infrastructure

J. C. J. van der Donck, J. K. Stortelder, G. B. Derksen

Proceedings Volume 8166, 81662T (2011) https://doi.org/10.1117/12.898857

KEYWORDS: Particles, Reticles, Extreme ultraviolet, Photomasks, Contamination, Particle contamination, Instrument modeling, Reliability, Lithography, Extreme ultraviolet lithography

Read Abstract +

With the market introduction of the NXE:3100, Extreme Ultra Violet Lithography (EUVL) enters a new stage. Now infrastructure in the wafer fabs must be prepared for new processes and new materials. Especially the infrastructure for masks poses a challenge. Because of the absence of a pellicle reticle front sides are exceptionally vulnerable to particles. It was also shown that particles on the backside of a reticle may cause tool down time. These effects set extreme requirements to the cleanliness level of the fab infrastructure for EUV masks. The cost of EUV masks justifies the use of equipment that is qualified on particle cleanliness. Until now equipment qualification on particle cleanliness have not been carried out with statistically based qualification procedures. Since we are dealing with extreme clean equipment the number of observed particles is expected to be very low. These particle levels can only be measured by repetitively cycling a mask substrate in the equipment. Recent work in the EUV AD-tool presents data on added particles during load/unload cycles, reported as number of Particles per Reticle Pass (PRP). In the interpretation of the data, variation by deposition statistics is not taken into account. In measurements with low numbers of added particles the standard deviation in PRP number can be large. An additional issue is that particles which are added in the routing outside the equipment may have a large impact on the testing result. The number mismatch between a single handling step outside the tool and the multiple cycling in the equipment makes accuracy of measurements rather complex. The low number of expected particles, the large variation in results and the combined effect of added particles inside and outside the equipment justifies putting good effort in making a test plan. Without a proper statistical background, tests may not be suitable for proving that equipment qualifies for the limiting cleanliness levels. Other risks are that a test may requires an unrealistic high testing effort or that equipment can only pass for a test when it meets unrealistic high cleanliness levels. TNO developed a testing model which enables setting up a qualification test on particle cleanliness for EUV mask infrastructure. It is based on particle deposition models with a Poisson statistics and an acceptance sampling test method. The test model combines the single contribution of the routing outside the equipment and contribution of multiple cycling in the equipment. This model enables designing a test with minimal testing effort that proves that equipment meets a required cleanliness level. Furthermore, it gives insight in other equipment requirements on reliability.

Proceedings Article | 14 October 2011 Paper

Investigating the intrinsic cleanliness of automated handling designed for EUV mask pod-in-pod systems

O. Brux, P. van der Walle, J. C. J. van der Donck, P. Dress

Proceedings Volume 8166, 81662S (2011) https://doi.org/10.1117/12.896908

KEYWORDS: Particles, Photomasks, Extreme ultraviolet, Reticles, Extreme ultraviolet lithography, Semiconducting wafers, Aluminum, Scanners, Nickel, Contamination

Read Abstract +

Proceedings Article | 8 April 2011 Paper

Particle detection on flat surfaces

Jacques van der Donck, Rob Snel, Jetske Stortelder, Alfred Abutan, Sjoerd Oostrom, Sander van Reek, Bert van der Zwan, Peter van der Walle

Proceedings Volume 7969, 79691S (2011) https://doi.org/10.1117/12.879435

KEYWORDS: Particles, Reticles, Extreme ultraviolet, Signal to noise ratio, Semiconducting wafers, Photomasks, Chromium, Signal detection, Scanners, Image processing

Read Abstract +

Proceedings Article | 8 April 2011 Paper

Particle qualification procedure for the TNO EUV reticle load port module of the HamaTech MaskTrackPro cleaning tool

J. Stortelder, J. C. J. van der Donck, S. Oostrom, P. van der Walle, O. Brux, P. Dress

Proceedings Volume 7969, 79691Q (2011) https://doi.org/10.1117/12.879370

KEYWORDS: Particles, Reticles, Extreme ultraviolet, Inspection, Inspection equipment, Fiber optic handling equipment, Extreme ultraviolet lithography, Particle contamination, Contamination, Lithography

Read Abstract +

Showing 5 of 15 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years