Dr. Jae Uk Lee Profile

Dr. Jae Uk Lee

Post doctor at imec

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Author

Publications (20)

Proceedings Article | 28 April 2023 Paper

EUV single patterning of random logic via using bright field mask

Ling Ee Tan, Werner Gillijns, Jae Uk Lee, Dongbo Xu, Jeroen van de Kerkhove, Vicky Philipsen, Ryoung-han Kim

Proceedings Volume 12494, 124940X (2023) https://doi.org/10.1117/12.2658344

KEYWORDS: Source mask optimization, Reticles, Resolution enhancement technologies, Extreme ultraviolet lithography, SRAF, Logic, Semiconducting wafers, Design and modelling, Critical dimension metrology, Optical proximity correction, Printing

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Proceedings Article | 28 April 2023 Presentation + Paper

Compact modeling of stochastics and application in OPC

Werner Gillijns, Jae-uk Lee, Ryan Ryoung han Kim, Chih-I Wei, Xima Zhang, Azat Latypov, Germain Fenger, John Sturtevant

Proceedings Volume 12494, 124940J (2023) https://doi.org/10.1117/12.2658260

KEYWORDS: Optical proximity correction, Stochastic processes, Semiconducting wafers, Modeling, Simulations, Design and modelling, Extreme ultraviolet lithography, Calibration, Logic, Lithography

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Proceedings Article | 7 June 2022 Presentation

Exploring the synergy between EUV lithography and directed self-assembly

Hyo Seon Suh, Lander Verstraete, Julie Van Bel, Philippe Bézard, Geert Mannaert, Jae Uk Lee, Shouhua Wang, Ivan Pollentier, Ashish Rathore

Proceedings Volume PC12054, PC1205402 (2022) https://doi.org/10.1117/12.2622565

KEYWORDS: Directed self assembly, Extreme ultraviolet lithography, Optical lithography, Extreme ultraviolet, Semiconductors, Semiconducting wafers, Lithography, Light-matter interactions

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Proceedings Article | 26 May 2022 Presentation + Paper

Design, patterning, and process integration overview for 2nm node

Syed Muhammad Yasser Sherazi, Yi-Han Chang, Youssef Drissi, Bilal Chehab, Jae Uk Lee, Victor Vega Gonzales, Ryan Ryoung Han Kim

Proceedings Volume 12052, 120520F (2022) https://doi.org/10.1117/12.2615311

KEYWORDS: Metals, Fin field effect transistors, Semiconducting wafers, Optical lithography, 3D imaging standards, Integrated circuits, CMOS devices, Standards development, Field effect transistors, Etching

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Proceedings Article | 26 May 2022 Poster + Paper

EUV low-n attenuated phase-shift mask on random logic via single patterning at pitch 36nm

Ling Ee Tan, Werner Gillijns, Jae Uk Lee, Dongbo Xu, Jeroen van de Kerkhove, Vicky Philipsen, Ryoung-Han Kim

Proceedings Volume 12051, 120510P (2022) https://doi.org/10.1117/12.2614000

KEYWORDS: Photomasks, Optical proximity correction, SRAF, Logic, Nanoimprint lithography, Source mask optimization, Photovoltaics, Printing, Lens design, Semiconducting wafers

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Proceedings Article | 25 March 2020 Presentation

Concurrent design rule, OPC and process optimization in EUV Lithography (Conference Presentation)

Dongbo Xu, Werner Gillijns, Ling Ee Tan, Jae Uk Lee, Ryoung-Han Kim

Proceedings Volume 11328, 1132804 (2020) https://doi.org/10.1117/12.2553212

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Proceedings Article | 21 March 2019 Paper

SALELE process from theory to fabrication

Youssef Drissi, Werner Gillijns, Jae Uk Lee, Ryan Ryoung han Kim , Ahmed Hamed-Fatehy, Rehab Kotb, Rajiv Naresh Sejpal, Germain Fenger, James Word

Proceedings Volume 10962, 109620V (2019) https://doi.org/10.1117/12.2517051

KEYWORDS: Manufacturing, Optical proximity correction, Extreme ultraviolet, Metals, Photomasks, Visualization, Scanning electron microscopy, Printing, Metrology, Optical lithography

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Proceedings Article | 20 March 2019 Presentation + Paper

SAQP spacer merge and EUV self-aligned block decomposition at 28nm metal pitch on imec 7nm node

Jae Uk Lee, Soo Han Choi, Yasser Sherazi, Ryan Ryoung Han Kim

Proceedings Volume 10962, 109620N (2019) https://doi.org/10.1117/12.2515216

KEYWORDS: Metals, Optical lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Etching, Source mask optimization, Stochastic processes, Photomasks, Lithography, Error analysis

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Self-aligned quadruple patterning (SAQP) is not compatible with every design. It couldn’t pattern even number routing track, for examples 4 internal routing tracks with power rails side by side, due to the process footprint of conventional SAQP. On the other hand SAQP spacer merge technique is able to remove 1 internal metal line by merging 2 spacer into 1 spacer. It can offer additional track scaling and flexible design of track number, for example, 5.5 tracks together with 6.5 tracks to accomplish low and high performance device respectively. In this paper, SAQP spacer merge technique and self-aligned block (SAB) process are considered as one of potential patterning approaches for 1D style 28 nm metal pitch. SAQP spacer merge technique is indispensable for supporting 5.5T cell of 4 internal tracks with 28nm metal pitch. And 5.5T cell also requires the irregular metal color array for SAB and its biases which is litho-etch skew. SAB can be sized up double compared to conventional block process, it is biased over next metal line to takes advantage of material etch selectivity of SAQP structure inherently before metallization. To meets those requirement with automatic mask layout generation, we newly proposed forward decomposition algorithm and color-aware block resizing of SAB. The forward decomposition algorithm generates mandrel to spacer 1 to spacer 2 to mimics process order of SAQP spacer merge technique. And color-aware block resizing of SAB needs conditional bias depending on neighboring metal color. Additionally, edge placement error budget is analyzed with process variation band of source mask optimization (SMO) on top of overlay, line edge roughness (LER) and etch uniformity assumption. Simulation result seems to be fine to enable SAQP spacer merge and SAB integration. However, EUV stochastics reported that CD uniformity is not fit in Gaussian distribution. Considering beyond 3σ, restricted design rule may be needed. To see design availability, 3 representative standard library cells were verified in design rule restriction without area loss. This SAQP spacer merge decomposition algorithm is useful since it is possible to extend for Fin patterning application as well.

Proceedings Article | 23 April 2018 Presentation + Paper

CNTs in the context of EUV pellicle history

Emily Gallagher, Marina Timmermans, Ivan Pollentier, Jae Uk Lee, Marina Mariano, Christoph Adelmann, Cedric Huyghebaert, Frank Scholze, Christian Laubis

Proceedings Volume 10583, 105831E (2018) https://doi.org/10.1117/12.2297710

KEYWORDS: Pellicles, Extreme ultraviolet, Particles, Extreme ultraviolet lithography, Semiconducting wafers, Photomasks, Scanners, Scattering, Silicon, Hydrogen

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Proceedings Article | 20 March 2018 Presentation + Paper

IMEC N7, N5 and beyond: DTCO, STCO and EUV insertion strategy to maintain affordable scaling trend

Ryoung-han Kim, Yasser Sherazi, Peter Debacker, Praveen Raghavan, Julien Ryckaert, Arindam Malik, Diederik Verkest, Jae Uk Lee, Werner Gillijns, Ling Ee Tan, Victor Blanco, Kurt Ronse, Greg McIntyre

Proceedings Volume 10588, 105880N (2018) https://doi.org/10.1117/12.2299335

KEYWORDS: Optical lithography, Extreme ultraviolet, Metals, Logic, Manufacturing, Lithography, Back end of line, Extreme ultraviolet lithography, New and emerging technologies

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Proceedings Article | 16 October 2017 Presentation

EUV single patterning for logic metal layers: achievement and challenge (Conference Presentation)

Ryoung-Han Kim, Werner Gillijns, Youssef Drissi, Jae Uk Lee, Darko Trivkovic, Victor Blanco Carballo, Stephane Larivière, Rudi De Ruyter, Morin Dehan, Gregory McIntyre, Ling Ee Tan

Proceedings Volume 10450, 1045004 (2017) https://doi.org/10.1117/12.2281738

KEYWORDS: Photomasks, Extreme ultraviolet, Optical lithography, Logic, Optical proximity correction, SRAF, Data conversion, Metals, Manufacturing, Semiconducting wafers

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Proceedings Article | 28 March 2017 Paper

Large marginal 2D self-aligned via patterning for sub-5nm technology

Suhyeong Choi, Jae Uk Lee, Victor Blanco Carballo, Peter Debacker, Praveen Raghavan, Ryoung-Han Kim, Youngsoo Shin

Proceedings Volume 10148, 101480J (2017) https://doi.org/10.1117/12.2257924

KEYWORDS: Etching, Photomasks, Metals, Extreme ultraviolet lithography, Dielectrics, Optical proximity correction, Immersion lithography, Lithography, Source mask optimization, Extreme ultraviolet, Line edge roughness

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Proceedings Article | 24 March 2017 Paper

2D self-aligned via patterning strategy with EUV single-exposure in 3nm technology

Suhyeong Choi, Jae Uk Lee, Victor Blanco Carballo, Ryoung-Han Kim, Youngsoo Shin

Proceedings Volume 10143, 1014321 (2017) https://doi.org/10.1117/12.2257923

KEYWORDS: Photomasks, Lithography, Extreme ultraviolet lithography, Source mask optimization, Optical proximity correction, Bridges, Etching, Dielectrics, Metals, Monte Carlo methods

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Proceedings Article | 24 March 2017 Presentation + Paper

Novel membrane solutions for the EUV pellicle: better or not?

Ivan Pollentier, Jae Uk Lee, Marina Timmermans, Christoph Adelmann, Houman Zahedmanesh, Cedric Huyghebaert, Emily Gallagher

Proceedings Volume 10143, 101430L (2017) https://doi.org/10.1117/12.2257891

KEYWORDS: Pellicles, Extreme ultraviolet, Extreme ultraviolet lithography, Carbon nanotubes, High volume manufacturing, Absorption, Lithography, Solids, Scanners, Coating, Hydrogen

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Proceedings Article | 25 October 2016 Paper

Introducing the EUV CNT pellicle

Jae Uk Lee, Johannes Vanpaemel, Ivan Pollentier, Christoph Adelmann, Houman Zahedmanesh, Cedric Huyghebaert, Marina Timmermans, Michael De Volder, Emily Gallagher

Proceedings Volume 9985, 99850C (2016) https://doi.org/10.1117/12.2243019

KEYWORDS: Pellicles, Extreme ultraviolet, Photomasks, Carbon nanotubes, Extreme ultraviolet lithography, Carbon, Scanners, Molybdenum, Finite element methods, Silicon

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Proceedings Article | 18 March 2016 Paper

EUV lithography imaging using novel pellicle membranes

Ivan Pollentier, Johannes Vanpaemel, Jae Uk Lee, Christoph Adelmann, Houman Zahedmanesh, Cedric Huyghebaert, Emily Gallagher

Proceedings Volume 9776, 977620 (2016) https://doi.org/10.1117/12.2220031

KEYWORDS: Directed self assembly, Extreme ultraviolet lithography, Pellicles, Photomasks, Extreme ultraviolet, 193nm lithography, Carbon nanotubes, Carbon, High volume manufacturing, Particles, Absorption, Etching, Scattering, Graphene, 3D modeling, Semiconducting wafers

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Proceedings Article | 23 October 2015 Paper

Properties and performance of EUVL pellicle membranes

Emily Gallagher, Johannes Vanpaemel, Ivan Pollentier, Houman Zahedmanesh, Christoph Adelmann, Cedric Huyghebaert, Rik Jonckheere, Jae Uk Lee

Proceedings Volume 9635, 96350X (2015) https://doi.org/10.1117/12.2199076

KEYWORDS: Extreme ultraviolet lithography, Pellicles, Photomasks, Extreme ultraviolet, Particles, High volume manufacturing, Scanners, 193nm lithography, Semiconducting wafers, Manufacturing, Silicon, Etching, Carbon

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Proceedings Article | 13 March 2015 Paper

Evaluation of optical properties of EUV resist underlayer

Jung Sik Kim, Seongchul Hong, Jae Uk Lee, Seung Min Lee, Jung Hwan Kim, Hyun Min Song, Jinho Ahn

Proceedings Volume 9422, 94222E (2015) https://doi.org/10.1117/12.2085755

KEYWORDS: Refractive index, Photons, Photoresist materials, Extreme ultraviolet lithography, Extreme ultraviolet, Critical dimension metrology, Stochastic processes, Line edge roughness, Optical properties, Lithography

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Proceedings Article | 18 March 2014 Paper

Imaging performance of attenuated phase-shift mask using coherent scattering microscope

Jae Uk Lee, SeeJun Jeong, Seong Chul Hong, Seung Min Lee, Jinho Ahn

Proceedings Volume 9048, 90481X (2014) https://doi.org/10.1117/12.2045877

KEYWORDS: Photomasks, Phase shifts, Extreme ultraviolet, Extreme ultraviolet lithography, Nanoimprint lithography, Microscopes, Inspection, Scattering, Diffraction, Binary data

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Proceedings Article | 1 April 2013 Paper

Stochastic resist patterning simulation using attenuated PSM for EUV lithography

Seongchul Hong, Seejun Jeong, Jae Uk Lee, Seung Min Lee, Jongseok Kim, Jonggul Doh, Jinho Ahn

Proceedings Volume 8679, 867928 (2013) https://doi.org/10.1117/12.2011362

KEYWORDS: Optical lithography, Photomasks, Extreme ultraviolet lithography, Phase shifts, Line edge roughness, Line width roughness, Extreme ultraviolet, Stochastic processes, Critical dimension metrology, Molybdenum

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Showing 5 of 20 publications

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