Dr. James R. Wasson Profile

Dr. James R. Wasson

Principal Staff Scientist

SPIE Involvement:

Author

Publications (19)

Proceedings Article | 6 December 2004 Paper

Defect printability and inspection of EUVL mask

Bing Lu, James Wasson, Pawitter Mangat, Jonathan Cobb, Scott Hector, Donald Pettibone, Donna O'Connell

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569318

KEYWORDS: Inspection, Photomasks, Defect inspection, Scanning electron microscopy, Extreme ultraviolet lithography, Extreme ultraviolet, Printing, Defect detection, Reflectivity, Multilayers

Read Abstract +

Proceedings Article | 20 May 2004 Paper

Development of phase shift masks for extreme ultraviolet lithography and optical evaluation of phase shift materials

Sang-In Han, Eric Weisbrod, James Wasson, Rich Gregory, Qianghua Xie, Pawitter Mangat, Scott Hector, William Dauksher, Kristine Rosfjord

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.535503

KEYWORDS: Reflectivity, Extreme ultraviolet, Etching, Phase shifts, Photomasks, Extreme ultraviolet lithography, Silicon, Scattering, Lithography, Chemical species

Read Abstract +

Proceedings Article | 20 May 2004 Paper

Process latitude measurements and their implications for CD control in EUV lithography

Jonathan Cobb, Richard Peters, Sergei Postnikov, Scott Hector, Bing Lu, Eric Weisbrod, James Wasson, Pawitter Mangat, Donna O'Connell

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.537366

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Optical proximity correction, Lithography, Photomasks, Critical dimension metrology, Data modeling, Monte Carlo methods, Scanners, Scanning electron microscopy

Read Abstract +

SPIE Journal Paper | 1 April 2004

Effects of reticle reflectance on lithography

Kevin Cummings, Bernd Geh, Bing Lu, James Wasson, Pawitter Mangat

JM3, Vol. 3, Issue 02, (April 2004) https://doi.org/10.1117/12.10.1117/1.1668268

KEYWORDS: Photomasks, Reflectivity, Reticles, Semiconducting wafers, Reflection, Lithography, Quartz, Light scattering, Critical dimension metrology, Chromium

Read Abstract +

Proceedings Article | 17 December 2003 Paper

157-nm attenuated phase-shift mask materials with irradiation stability

James Wasson, Nora Edwards, Bing Lu, Pawitter Mangat, Andrew Grenville

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.517893

KEYWORDS: Inspection, Phase shifts, Photomasks, Attenuators, Semiconducting wafers, Reflection, Lithography, Vacuum ultraviolet, Optical properties, Chromium

Read Abstract +

Proceedings Article | 17 December 2003 Paper

Effects of reticle reflectance on lithography

Kevin Cummings, Bernd Geh, Bing Lu, James Wasson, Eric Weisbrod, William Dauksher, Kevin Nordquist, Pawitter Mangat

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.516925

KEYWORDS: Photomasks, Reflectivity, Semiconducting wafers, Reticles, Reflection, Lithography, Quartz, Light scattering, Critical dimension metrology, Chromium

Read Abstract +

Proceedings Article | 17 December 2003 Paper

EUV radiation damage test on EUVL mask absorber materials

Bing Lu, James Wasson, Sang-In Han, Pawitter Mangat, Victoria Golovkina, Franco Cerrina

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.517972

KEYWORDS: Extreme ultraviolet lithography, Reflectivity, Extreme ultraviolet, Hydrogen, Deep ultraviolet, Inspection, Plasma enhanced chemical vapor deposition, Plasma etching, Spectroscopy, Photomasks

Read Abstract +

Proceedings Article | 17 December 2003 Paper

CD uniformity dependence on CAR PEB process and its improvement for EUVL mask fabrication

Bing Lu, James Wasson, Eric Weisbrod, Pawitter Mangat, Eric Ainley, Adolpho Rios, Kevin Nordquist

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.517989

KEYWORDS: Critical dimension metrology, Extreme ultraviolet lithography, Mask making, Photoresist processing, Diffusion, Ultraviolet radiation, Lutetium, Electron beam lithography, Quartz, Semiconducting wafers

Read Abstract +

Proceedings Article | 27 December 2002 Paper

Recovery of Mo/Si-multilayer-coated LTEM substrate

Pawitter Mangat, A. Alec Talin, Andrew Hooper, Diana Convey, Sang-In Han, James Wasson

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468106

KEYWORDS: Etching, Molybdenum, Surface roughness, Photomasks, Silicon, Multilayers, Extreme ultraviolet lithography, Reflectivity, Extreme ultraviolet, Annealing

Read Abstract +

Proceedings Article | 27 December 2002 Paper

Image placement error due to pattern transfer for EUV masks

Zorian Masnyj, James Wasson, Bing Lu, Eric Weisbrod, Pawitter Mangat, Kevin Nordquist, Eric Ainley, William Dauksher, Douglas Resnick

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.477479

KEYWORDS: Photomasks, Extreme ultraviolet, Chromium, Distortion, Lithography, Extreme ultraviolet lithography, Etching, Image processing, Reticles, Semiconducting wafers

Read Abstract +

Proceedings Article | 27 December 2002 Paper

Integration of antireflection coatings on EUV absorber stacks

James Wasson, Sang-In Han, N. Edwards, Eric Weisbrod, William Dauksher, Pawitter Mangat, Donald Pettibone

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468104

KEYWORDS: Inspection, Reflectivity, Reticles, Etching, Extreme ultraviolet, Multilayers, Chromium, Extreme ultraviolet lithography, Antireflective coatings, Photomasks

Read Abstract +

Proceedings Article | 1 July 2002 Paper

Novel design of att-PSM structure for extreme-ultraviolet lithography and enhancement of image contrast during inspection

Sang-In Han, James Wasson, Pawitter Mangat, Jonathan Cobb, Kevin Lucas, Scott Hector

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472324

KEYWORDS: Phase shifts, Binary data, Chromium, Photomasks, Reflectivity, Inspection, Signal attenuation, Extreme ultraviolet, Extreme ultraviolet lithography, Multilayers

Read Abstract +

Attenuated Phase Shift Masks (Att-PSM) have been actively investigated and developed for conventional optical lithography to enhance the lithographic performance. In this paper, Att-PSM for Extreme Ultraviolet Lithography (EUVL) is compared to binary EUVL masks through simulation. Additionally, a new structural design for EUVL Att-PSM that is intended to enhance the image contrast during the inspection is also presented. Aerial image simulation for 50 and 35-nm wide contact holes was performed using an internally developed optical projection lithography simulator. Analysis of phase shift and attenuation for various combinations of Att-PSM layers was also done using an internally developed simulator based on optical multilayer thin film theory. The results of aerial image simulation agree with previously published results in that Att-PSM for EUVL provide steeper edge profile and higher peak intensity compared to the binary EUVL mask. These enhanced aerial images provide greater exposure latitude and 28 percent to 80 percent greater depth of focus for Att-PSM compared to binary masks for printing contacts. The simulations were also used to set initial targets for phase and reflectance control of the PSM stack for 35-nm contacts. Mean reflectance between 3 and 6 percent and phase of 180 +/- 10 degrees result in significantly larger DOF than for binary masks. The prototype structure simulated for an EUVL Att-PSM consists of an upper dielectric layer (SiON) and a lower metal layer (TaN or Cr) on top of Mo/Si multilayer mirror. With this dual layer scheme, satisfying the optical requirements is easier than with a single layer structure because accurate control of phase shift and attenuation is possible by controlling the thickness of both the upper and lower layers. Obtaining the desired phase shift and transmission using a single layer is difficult. The advantage of having a dielectric (SiON) top layer is that the thickness of dielectric layer can be optimized to enhance the image contrast at inspection wavelength (normally DUV) as well as to provide the desired phase shift at exposure wavelength (13.4-13.5nm). Another advantage of Att-PSM for EUVL is the reduced height of patterned structure on the multilayer mirror which provides a relative advantage in resolution by reducing the image blur caused by the shadowing effects of the taller absorber stack.

Proceedings Article | 1 July 2002 Paper

Inspection of EUV reticles

Donald Pettibone, Andrei Veldman, Ted Liang, Alan Stivers, Pawitter Mangat, Bing Lu, Scott Hector, James Wasson, Kenneth Blaedel, Emily Fisch, David Walker

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472311

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Reflectivity, Silicon, Deep ultraviolet, Reticles, Semiconducting wafers, Multilayers, Glasses

Read Abstract +

Proceedings Article | 11 March 2002 Paper

Thin film stress control of absorber stack materials for EUVL reticles

James Wasson, Diana Convey, Pawitter Mangat, D. Frank Bazzarre, Lubomir Parobek

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458257

KEYWORDS: Thin films, Resistance, Chromium, Extreme ultraviolet lithography, Distortion, Spectroscopic ellipsometry, Absorption, Photomasks, X-rays, Semiconducting wafers

Read Abstract +

Proceedings Article | 20 August 2001 Paper

Substrate defect smoothing of EUVL mask blanks using TaSiN films

James Wasson, Theresa Hopson, Pawitter Mangat, Scott Hector

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436701

KEYWORDS: Surface roughness, Annealing, Extreme ultraviolet lithography, Chromium, Photomasks, Mirrors, Reflectivity, Silicon, Semiconducting wafers, Extreme ultraviolet

Read Abstract +

Proceedings Article | 20 August 2001 Paper

Infinitely selective repair buffer for EUVL reticles

James Wasson, Ken Smith, Pawitter Mangat, Scott Hector

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436667

KEYWORDS: Chromium, Etching, Carbon, Ions, Gallium, Extreme ultraviolet lithography, Reticles, Reflectivity, Inspection, Mirrors

Read Abstract +

Proceedings Article | 22 January 2001 Paper

Characterization of Be-based multilayer masks using x-ray reflectivity and Auger electron spectroscopy

James Wasson, Pawitter Mangat, Jon Slaughter, Scott Hector, Sasa Bajt, Patrick Kearney

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410748

KEYWORDS: Reflectivity, Mirrors, Etching, Beryllium, Extreme ultraviolet, X-rays, Chromium, Molybdenum, Optical lithography, Spectroscopy

Read Abstract +

Proceedings Article | 21 July 2000 Paper

EUVL printing results of a low-thermal expansion material (LTEM) mask

William Tong, John Taylor, Scott Hector, Melissa Shell, Guojing Zhang, Patrick Kearney, Christopher Walton, Cindy Larson, James Wasson, Pawitter Mangat, Donna O'Connell, Daniel Folk

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390038

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Silicon, Manufacturing, Printing, Distortion, Lithography, Extreme ultraviolet, Reflectivity

Read Abstract +

Proceedings Article | 21 July 2000 Paper

EUV mask fabrication using Be-based multilayer mirrors

Pawitter Mangat, James Wasson, Scott Hector, Gregory Cardinale, Sasa Bajt

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390123

KEYWORDS: Photomasks, Reflectivity, Multilayers, Extreme ultraviolet, Extreme ultraviolet lithography, Beryllium, Mirrors, Lithography, Optical lithography, Mask making

Read Abstract +

Showing 5 of 19 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years