Maskless lithography (ML2) with a scanning high-density spot array has been applied to pattern writing of flat panel displays (FPDs) and printed circuit boards (PCBs). In a ML2 system, spot array diagnostics is necessary to calibrate spot position deviations to achieve exposure pattern uniformity. However, it takes time for the diagnostic including the throughfocus spot profile measurement of a large number of spots (~ 1M spots). Therefore, a high throughput spot diagnostic system is required. We have proposed an alignment-free, high-throughput and cost-effective diagnostic technique with a scanning linear image sensor. Through-focus spot profiles were reconstructed with through-focus scanning signals and response functions of the image sensor pixels. This technique can realize a cost-effective on-machine spot diagnostic system compared to conventional micro-slit scanning systems. We have demonstrated this spot diagnostic with the proofof- concept system. We have confirmed the feasibility in measurements and achieved a lateral position variance of σ < 0.1 μm, (7% of spot size 1.5 μm), an axial position variance of σ < 0.2 μm, (2% of DOF 10 μm) and a telecentricity variance of σ < 1.0 mrad. These variances are then correlating with the level of positioning variances in the stage repeatability. In addition, we also have demonstrated an estimation of low-order wavefront aberrations with a focal spot profile. This onmachine laser spot diagnostic tool could contribute to improve the pattering quality and monitor the optical performance for various focus-spot laser processing systems.
Advances in the semiconductor industry have led the wafer inspection technology to the limit of nanometer-scale defect detection, which is far beyond the diffraction limit. In this regime, the signal-to-noise ratio (SNR) is the figure-of-merit to determine whether the optical system can detect a single nanometer-scale defect. In this paper, we investigated the SNR properties of various line defects using the dark-field inspection with tailored polarized illumination by simulation and experiment. Conventional crossed Nicols configuration with linear polarized illumination and crossed analyzer can minimize background scattering noise and maximize line defect signal only for a specific kind of line defect such as gap or bridge due to strong polarization dependence on a line and space (L/S) pattern. The nulling elliptically polarized illumination is optimized to suppress background scattering noise moderately and maintain defect signal intensity at the same time. We confirmed SNR improvement for both 10 nm open and bridge defects on 40 nm line and space silicon pattern with 40 nm depth. There was a good agreement between our simulation results and experimental results. We experimentally confirmed SNR ~ 4 for both line gap and bridge defect detection on 40 nm L/S patterned wafer with the fixed nulling illumination.
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