Mr. Jaroslaw Jurenczyk Profile

Jaroslaw Jurenczyk

at VIGO System S.A.

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Publications (9)

Proceedings Article | 19 June 2024 Presentation

MIRPIC: photonic integrated circuits for mid-IR spectral range

Ryszard Piramidowicz, Stanislaw Stopinski, Krzysztof Anders, Anna Jusza, Marcin Lelit, Andrzej Polatynski, Piotr Wiśniewski, Mateusz Slowikowski, Marcin Juchniewicz, Jaroslaw Jurenczyk, Marek Liebert, Kamil Pierscinski, Dorota Pierscinska

Proceedings Volume PC13012, PC130120I (2024) https://doi.org/10.1117/12.3022512

KEYWORDS: Photonic integrated circuits, Mid infrared, Internet of things, Integrated photonics, Environmental monitoring, Data communications, Telecommunications, Silicon, Quantum cascade lasers, Printed circuit board testing

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Proceedings Article | 11 October 2022 Presentation

HOT LWIR multi-junction cascade photovoltaic detectors based on InAs/InAsSb superlattices (Conference Presentation)

Łukasz Kubiszyn, Krystian Michalczewski, Jarosław Jureńczyk, Waldemar Gawron, Józef Piotrowski

Proceedings Volume PC12234, PC1223408 (2022) https://doi.org/10.1117/12.2646608

KEYWORDS: Superlattices, Long wavelength infrared, Sensors, Photovoltaic detectors, Photodiodes, Doping, Thermography, Solar cells, Resistance, Quantum efficiency

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Proceedings Article | 5 March 2022 Presentation

T2SL detectors inspired by HOT MCT technology

Jaroslaw Jurenczyk, Krystian Michalczewski, Lukasz Kubiszyn, Józef Piotrowski

Proceedings Volume PC12009, PC1200915 (2022) https://doi.org/10.1117/12.2610625

KEYWORDS: Sensors, Metalorganic chemical vapor deposition, Toxicity, Superlattices, Photovoltaics, Photodiodes, Photodetectors, Mid-IR, Mercury cadmium telluride, Mercury

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Proceedings Article | 5 March 2021 Poster + Presentation + Paper

Commercialization readiness of HOT LWIR detectors based on InAs/InAs1-xSbx T2SL at VIGO System S.A.

Jarosław Jureńczyk, Łukasz Kubiszyn, Krystian Michalczewski, Józef Piotrowski

Proceedings Volume 11680, 116801G (2021) https://doi.org/10.1117/12.2583242

KEYWORDS: Long wavelength infrared, Sensors, Superlattices, Photoresistors, Photodiodes, Mercury cadmium telluride, Semiconducting wafers, Plasmonics, Microlens, Gallium arsenide

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Proceedings Article | 27 February 2019 Open Access

Advances on photoconductive InAs/GaSb type-II superlattice long-wavelength infrared detectors for high operating temperature

Raphael Müller, Jasmin Niemasz, Volker Daumer, Andrzej Janaszek, Jarosław Jureńczyk, Robert Rehm

Proceedings Volume 10914, 1091416 (2019) https://doi.org/10.1117/12.2506624

KEYWORDS: Sensors, Photoresistors, Semiconducting wafers, Long wavelength infrared, Superlattices, Resistance, Gallium arsenide, Electro optics, Infrared sensors, Gallium antimonide

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SPIE Journal Paper | 27 February 2018

Electrical and optical performance of midwave infrared InAsSb heterostructure detectors

Emilia Gomółka, Małgorzata Kopytko, Olga Markowska, Krystian Michalczewski, Łukasz Kubiszyn, Artur Kębłowski, Jarosław Jureńczyk, Waldemar Gawron, Piotr Marcin Martyniuk, Józef Piotrowski, Jarosław Rutkowski, Antoni Rogalski

OE, Vol. 57, Issue 02, 027107, (February 2018) https://doi.org/10.1117/12.10.1117/1.OE.57.2.027107

KEYWORDS: Sensors, Heterojunctions, Infrared sensors, Mid-IR, Antimony, Resistance, Gallium arsenide, Mercury cadmium telluride, Optics manufacturing, Indium arsenide

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Proceedings Article | 30 August 2017 Presentation + Paper

Noise and detectivity of InAs/GaSb T2SL 4.5 um IR detectors

Andrzej Kolek, Łukasz Ciura, Krzysztof Czuba, Agata Jasik, Jarosław Jureńczyk, Iwona Sankowska, Janusz Kaniewski

Proceedings Volume 10404, 1040402 (2017) https://doi.org/10.1117/12.2272722

KEYWORDS: Infrared detectors, Sensors, Superlattices

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SPIE Journal Paper | 19 February 2014 Open Access

Comprehensive analysis of new near-infrared avalanche photodiode structure

Krzysztof Czuba, Jaroslaw Jurenczyk, Janusz Kaniewski

JARS, Vol. 8, Issue 01, 084999, (February 2014) https://doi.org/10.1117/12.10.1117/1.JRS.8.084999

KEYWORDS: Avalanche photodiodes, Absorption, Avalanche photodetectors, Doping, Aluminum, Gallium, Ionization, Semiconductors, Computer aided design, Photodetectors

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Proceedings Article | 18 December 2012 Paper

Modeling of InGaAs/InAlAs/InP avalanche photodiodes with undepleted absorber

Janusz Kaniewski, Jaroslaw Jurenczyk, Dariusz Zak, Jan Muszalski

Proceedings Volume 8697, 869721 (2012) https://doi.org/10.1117/12.2007245

KEYWORDS: Avalanche photodiodes, Avalanche photodetectors, Doping, Ionization, Absorption, Instrument modeling, Receivers, Indium gallium arsenide, Telecommunications, Quantum efficiency

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Showing 5 of 9 publications

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