Evolving threats encountered by coalition forces in Operation Iraqi Freedom drive the need for innovations in
airborne intelligence, surveillance, and reconnaissance capabilities. In many cases, disruptive capabilities are created
by linking existing technologies and new radical technologies in a novel way. Some of the radical technologies used
in achieving these disruptive capabilities are existing prototypes or one-of-a-kind systems that are thrust into the
field to quickly react to emerging threats. Horned Owl is one such rapidly developed innovative technical solution
designed to meet immediate battlefield needs. This paper focuses on two key areas of this initiative. The first is the
innovation champion establishing a collaborative environment which fosters creativity and allows the project to
mature the disruptive capability. The second is the practical implication, or challenges of deploying experimental
systems in a battlefield environment. Discussions of these two areas provide valuable lessons to guide future
innovation champions when presented with the dual task of balancing system maturation with meeting operational
demand.
Contents of this paper are not necessarily the official views of, or endorsed by the U.S. Government, the Department
of Defense, or the Department of the Air Force.
A variation to an existing laser damage model has been developed. The principle modification in this paper is the inclusion of the temperature dependent absorption coefficient. The absorption coefficient was specifically calculated for silicon irradiated by lasers at 1.06 and 1.32 microns. At these wavelengths, the incident laser photons are at and below the indirect absorption band gap of silicon. Four temperature dependent absorption processes of silicon are considered. These include one photon free carrier absorption, one photon/one phonon indirect absorption, one photon/three phonon indirect absorption and two photon/one phonon indirect absorption. From these four processes, simple absorption coefficients are derived for both 1.06 and 1.32 micrometers radiation. The resulting predictions of laser damage for 1.06 and 1.32 micrometers laser radiation on silicon substrates are provided.
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