Advanced technology nodes require a thinner photoresist layer for patterning to prevent pattern collapse as feature sizes are tighter. Within this study, we delve into the impact of photoresist thickness thinning on metrology performance utilizing ASML's eP5 scanning electron microscope (SEM). A variety of eP5 SEM configurations and scanning methodologies were employed to assess SEM image quality and metrology precision. Additionally, the efficacy of line-space programmed defect (PD) detection was evaluated using distinct eP5 SEM settings. We note that achieving optimal metrology performance for distinct features might require to use of different SEM settings and scanning configurations. For instance, eP5 Quad-directional scan technique offers superior metrological results when compared to the unidirectional scan for the tip-to-tip (T2T) features. In the context of line-space PD inspection, lower e-beam landing energy is found to increase the sensitivity of bridge defect detection.
The grouping method assisted EPE-aware control method is being explored in a multi-feature dual layer Logic use case. EPE metric is estimated using angle resolved optical Scatterometry based overlay and electron beam-based metrology (large field of view SEM) for the reconstruction of edge-to-edge distance between the Metal and Via pattern. In the setup phase, EPE sensitivities to dose and focus have been derived using data from a FEM wafer. EPE-aware optimization, using scanner dose and overlay control sub-recipes, outperforms traditional optimization in simulations showing reduced EPE max per die. This improvement suggests a potential increase in device yield through the adoption of EPE-aware control strategies. To verify this performance improvement on wafers, an experiment is needed with minimal wafer to wafer and lot to lot variations which can be achieved by reducing time between lots and increasing the number of wafers measured.
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