Dr. Jelle Vandereyken Profile

Dr. Jelle Vandereyken

at imec

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Publications (5)

Proceedings Article | 22 February 2021 Presentation + Paper

EUV lithographic process enablement with novel litho track hardware

Andreia Santos, V. Kosma, J. Vandereyken, H. Marhfour, Y. Tanaka, M. Harumoto, M. Asai, H. Stokes, H. S. Suh, P. Foubert, D. De Simone

Proc. SPIE. 11612, Advances in Patterning Materials and Processes XXXVIII

KEYWORDS: Lithography, Photoresist materials, Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Thin film coatings, Photoresist developing

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Proceedings Article | 23 March 2020 Presentation + Paper

Defectivity modulation in EUV resists through advanced filtration technologies

Lucia D'Urzo, Toru Umeda, Takehito Mizuno, Atsushi Hattori, Rao Varanasi, Amarnauth Singh, Rajan Beera, Philippe Foubert, Jelle Vandereyken, Waut Drent

Proc. SPIE. 11326, Advances in Patterning Materials and Processes XXXVII

KEYWORDS: Particles, Inspection, Bridges, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Defect inspection

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Proceedings Article | 13 March 2018 Presentation + Paper

LWR enhancement for 300mm track processing

Harold Stokes, Jelle Vandereyken, Waut Drent, Masahiko Harumoto, Masaya Asai, Yuji Tanaka, Chisayo Nakayama, Charles Pieczulewski

Proc. SPIE. 10586, Advances in Patterning Materials and Processes XXXV

KEYWORDS: Lithography, Reticles, Optical lithography, Etching, Ultraviolet radiation, Annealing, Photoresist materials, Line width roughness, Line edge roughness, Semiconducting wafers

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Proceedings Article | 27 March 2017 Paper

Continuous improvements of defectivity rates in immersion photolithography via functionalized membranes in point-of-use photochemical filtration

Lucia D'Urzo, Hareen Bayana, Jelle Vandereyken, Philippe Foubert, Aiwen Wu, Jad Jaber, James Hamzik

Proc. SPIE. 10146, Advances in Patterning Materials and Processes XXXIV

KEYWORDS: Lithography, Particles, Scanning electron microscopy, Photoresist materials, Frequency modulation, Finite element methods, Bridges, Line width roughness, Fermium, Immersion lithography, Line edge roughness, Semiconducting wafers

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Proceedings Article | 24 March 2017 Presentation + Paper

Integrated approach to improving local CD uniformity in EUV patterning

Andrew Liang, Jan Hermans, Timothy Tran, Katja Viatkina, Chen-Wei Liang, Brandon Ward, Steven Chuang, Jengyi Yu, Greg Harm, Jelle Vandereyken, David Rio, Michael Kubis, Samantha Tan, Mircea Dusa, Akhil Singhal, Bart van Schravendijk, Girish Dixit, Nader Shamma, Rich Wise, Sirish Reddy

Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII

KEYWORDS: Lithography, Etching, Photomasks, Extreme ultraviolet, Plasma enhanced chemical vapor deposition, Plasma etching, Extreme ultraviolet lithography, High volume manufacturing, Reactive ion etching, Stochastic processes, Focus stacking software

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Extreme ultraviolet (EUV) lithography is crucial to enabling technology scaling in pitch and critical dimension (CD). Currently, one of the key challenges of introducing EUV lithography to high volume manufacturing (HVM) is throughput, which requires high source power and high sensitivity chemically amplified photoresists. Important limiters of high sensitivity chemically amplified resists (CAR) are the effects of photon shot noise and resist blur on the number of photons received and of photoacids generated per feature, especially at the pitches required for 7 nm and 5 nm advanced technology nodes. These stochastic effects are reflected in via structures as hole-to-hole CD variation or local CD uniformity (LCDU). Here, we demonstrate a synergy of film stack deposition, EUV lithography, and plasma etch techniques to improve LCDU, which allows the use of high sensitivity resists required for the introduction of EUV HVM. Thus, to improve LCDU to a level required by 5 nm node and beyond, film stack deposition, EUV lithography, and plasma etch processes were combined and co-optimized to enhance LCDU reduction from synergies.

Test wafers were created by depositing a pattern transfer stack on a substrate representative of a 5 nm node target layer. The pattern transfer stack consisted of an atomically smooth adhesion layer and two hardmasks and was deposited using the Lam VECTOR PECVD product family. These layers were designed to mitigate hole roughness, absorb out-of-band radiation, and provide additional outlets for etch to improve LCDU and control hole CD. These wafers were then exposed through an ASML NXE3350B EUV scanner using a variety of advanced positive tone EUV CAR. They were finally etched to the target substrate using Lam Flex dielectric etch and Kiyo conductor etch systems. Metrology methodologies to assess dimensional metrics as well as chip performance and defectivity were investigated to enable repeatable patterning process development.

Illumination conditions in EUV lithography were optimized to improve normalized image log slope (NILS), which is expected to reduce shot noise related effects. It can be seen that the EUV imaging contrast improvement can further reduce post-develop LCDU from 4.1 nm to 3.9 nm and from 2.8 nm to 2.6 nm. In parallel, etch processes were developed to further reduce LCDU, to control CD, and to transfer these improvements into the final target substrate. We also demonstrate that increasing post-develop CD through dose adjustment can enhance the LCDU reduction from etch. Similar trends were also observed in different pitches down to 40 nm. The solutions demonstrated here are critical to the introduction of EUV lithography in high volume manufacturing. It can be seen that through a synergistic deposition, lithography, and etch optimization, LCDU at a 40 nm pitch can be improved to 1.6 nm (3-sigma) in a target oxide layer and to 1.4 nm (3-sigma) at the photoresist layer.

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